Strained Silicon Heterostructures: Materials and devices
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical...
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Stevenage
IET
2001
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| Schriftenreihe: | IEE circuits, devices and systems series
12 |
| Schlagworte: | |
| Online-Zugang: | UBY01 Volltext |
| Zusammenfassung: | This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9781849191678 |
| DOI: | 10.1049/PBCS012E |
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| illustrated | Not Illustrated |
| index_date | 2024-07-03T18:13:04Z |
| indexdate | 2024-07-10T09:13:20Z |
| institution | BVB |
| isbn | 9781849191678 |
| language | English |
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| series2 | IEE circuits, devices and systems series |
| spelling | Strained Silicon Heterostructures Materials and devices C.K. Maiti, N.B. Chakrabarti & S.K. Ray (eds.) Stevenage IET 2001 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier IEE circuits, devices and systems series 12 This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists Heterostruktur (DE-588)4123378-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Chemical vapor deposition Electric resistance Energy levels (Quantum mechanics) Field-effect transistors Heterojunctions Molecular beam epitaxy Silicon chemical vapour deposition elemental semiconductors energy gap field effect transistors molecular beam epitaxial growth semiconductor heterojunctions silicon Silicium (DE-588)4077445-4 s Heterostruktur (DE-588)4123378-5 s DE-604 Maiti, Chinmay K. (DE-588)173496431 edt 9780852967782 Erscheint auch als Druck-Ausgabe 978-1-84919-167-8 https://doi.org/10.1049/PBCS012E Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Strained Silicon Heterostructures Materials and devices Heterostruktur (DE-588)4123378-5 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4123378-5 (DE-588)4077445-4 |
| title | Strained Silicon Heterostructures Materials and devices |
| title_auth | Strained Silicon Heterostructures Materials and devices |
| title_exact_search | Strained Silicon Heterostructures Materials and devices |
| title_exact_search_txtP | Strained Silicon Heterostructures Materials and devices |
| title_full | Strained Silicon Heterostructures Materials and devices C.K. Maiti, N.B. Chakrabarti & S.K. Ray (eds.) |
| title_fullStr | Strained Silicon Heterostructures Materials and devices C.K. Maiti, N.B. Chakrabarti & S.K. Ray (eds.) |
| title_full_unstemmed | Strained Silicon Heterostructures Materials and devices C.K. Maiti, N.B. Chakrabarti & S.K. Ray (eds.) |
| title_short | Strained Silicon Heterostructures |
| title_sort | strained silicon heterostructures materials and devices |
| title_sub | Materials and devices |
| topic | Heterostruktur (DE-588)4123378-5 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Heterostruktur Silicium |
| url | https://doi.org/10.1049/PBCS012E |
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