Dual port SRAM - overview:
There are many more interactions that must be considered when designing a Dual Port memory as compared to a Single Port memory, especially since each port is completely independent of the other. This tutorial focuses on reading and writing the memory cell and how the actions of the other port can ha...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch Video |
| Sprache: | English |
| Veröffentlicht: |
United States
IEEE
2010
|
| Schlagworte: | |
| Online-Zugang: | FHN01 TUM01 |
| Zusammenfassung: | There are many more interactions that must be considered when designing a Dual Port memory as compared to a Single Port memory, especially since each port is completely independent of the other. This tutorial focuses on reading and writing the memory cell and how the actions of the other port can have major effects on what occurs in the cell. One of the key types of conditions that must be analyzed when calculating the beta ratio of the cell is called a collision, where both ports access the same memory cell at the same time. Several comparisons will be made to the Single Port SRAM to better examine the issues associated with the Dual Port |
| Beschreibung: | Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 13, 2020) |
| Beschreibung: | 1 Online-Resource (1 Videodatei, 60 Minuten) color illustrations |
| ISBN: | 9781424462193 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV047477135 | ||
| 003 | DE-604 | ||
| 005 | 20220216 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 210921s2010 |||| o||u| ||||||eng d | ||
| 020 | |a 9781424462193 |9 978-1-4244-6219-3 | ||
| 035 | |a (ZDB-37-ICG)EDP201 | ||
| 035 | |a (OCoLC)1269394388 | ||
| 035 | |a (DE-599)BVBBV047477135 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-92 | ||
| 082 | 0 | |a 621.38195833 |2 23 | |
| 100 | 1 | |a Sheppard, Doug |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Dual port SRAM - overview |c Doug Sheppard |
| 246 | 1 | 3 | |a Dual port static random-access memory - overview |
| 264 | 1 | |a United States |b IEEE |c 2010 | |
| 300 | |a 1 Online-Resource (1 Videodatei, 60 Minuten) |b color illustrations | ||
| 336 | |b tdi |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 13, 2020) | ||
| 520 | |a There are many more interactions that must be considered when designing a Dual Port memory as compared to a Single Port memory, especially since each port is completely independent of the other. This tutorial focuses on reading and writing the memory cell and how the actions of the other port can have major effects on what occurs in the cell. One of the key types of conditions that must be analyzed when calculating the beta ratio of the cell is called a collision, where both ports access the same memory cell at the same time. Several comparisons will be made to the Single Port SRAM to better examine the issues associated with the Dual Port | ||
| 650 | 4 | |a Random access memory | |
| 650 | 4 | |a Tutorials | |
| 655 | 7 | |0 (DE-588)4017102-4 |a Film |2 gnd-content | |
| 912 | |a ZDB-37-ICG | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-032878696 | ||
| 966 | e | |u https://ieeexplore.ieee.org/courses/details/EDP201 |l FHN01 |p ZDB-37-ICG |x Verlag |3 Volltext | |
| 966 | e | |u https://ieeexplore.ieee.org/courses/details/EDP201 |l TUM01 |p ZDB-37-ICG |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804182793115140096 |
|---|---|
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| author | Sheppard, Doug |
| author_facet | Sheppard, Doug |
| author_role | aut |
| author_sort | Sheppard, Doug |
| author_variant | d s ds |
| building | Verbundindex |
| bvnumber | BV047477135 |
| collection | ZDB-37-ICG |
| ctrlnum | (ZDB-37-ICG)EDP201 (OCoLC)1269394388 (DE-599)BVBBV047477135 |
| dewey-full | 621.38195833 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38195833 |
| dewey-search | 621.38195833 |
| dewey-sort | 3621.38195833 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic Video |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02036nmm a2200385zc 4500</leader><controlfield tag="001">BV047477135</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20220216 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">210921s2010 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781424462193</subfield><subfield code="9">978-1-4244-6219-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-37-ICG)EDP201</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1269394388</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV047477135</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38195833</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sheppard, Doug</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dual port SRAM - overview</subfield><subfield code="c">Doug Sheppard</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Dual port static random-access memory - overview</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">United States</subfield><subfield code="b">IEEE</subfield><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Resource (1 Videodatei, 60 Minuten)</subfield><subfield code="b">color illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">tdi</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 13, 2020)</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">There are many more interactions that must be considered when designing a Dual Port memory as compared to a Single Port memory, especially since each port is completely independent of the other. This tutorial focuses on reading and writing the memory cell and how the actions of the other port can have major effects on what occurs in the cell. One of the key types of conditions that must be analyzed when calculating the beta ratio of the cell is called a collision, where both ports access the same memory cell at the same time. Several comparisons will be made to the Single Port SRAM to better examine the issues associated with the Dual Port</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Random access memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Tutorials</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4017102-4</subfield><subfield code="a">Film</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-37-ICG</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032878696</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://ieeexplore.ieee.org/courses/details/EDP201</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-37-ICG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://ieeexplore.ieee.org/courses/details/EDP201</subfield><subfield code="l">TUM01</subfield><subfield code="p">ZDB-37-ICG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| genre | (DE-588)4017102-4 Film gnd-content |
| genre_facet | Film |
| id | DE-604.BV047477135 |
| illustrated | Illustrated |
| index_date | 2024-07-03T18:11:31Z |
| indexdate | 2024-07-10T09:13:11Z |
| institution | BVB |
| isbn | 9781424462193 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032878696 |
| oclc_num | 1269394388 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-92 |
| owner_facet | DE-91 DE-BY-TUM DE-92 |
| physical | 1 Online-Resource (1 Videodatei, 60 Minuten) color illustrations |
| psigel | ZDB-37-ICG |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | IEEE |
| record_format | marc |
| spelling | Sheppard, Doug Verfasser aut Dual port SRAM - overview Doug Sheppard Dual port static random-access memory - overview United States IEEE 2010 1 Online-Resource (1 Videodatei, 60 Minuten) color illustrations tdi rdacontent c rdamedia cr rdacarrier Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 13, 2020) There are many more interactions that must be considered when designing a Dual Port memory as compared to a Single Port memory, especially since each port is completely independent of the other. This tutorial focuses on reading and writing the memory cell and how the actions of the other port can have major effects on what occurs in the cell. One of the key types of conditions that must be analyzed when calculating the beta ratio of the cell is called a collision, where both ports access the same memory cell at the same time. Several comparisons will be made to the Single Port SRAM to better examine the issues associated with the Dual Port Random access memory Tutorials (DE-588)4017102-4 Film gnd-content |
| spellingShingle | Sheppard, Doug Dual port SRAM - overview Random access memory Tutorials |
| subject_GND | (DE-588)4017102-4 |
| title | Dual port SRAM - overview |
| title_alt | Dual port static random-access memory - overview |
| title_auth | Dual port SRAM - overview |
| title_exact_search | Dual port SRAM - overview |
| title_exact_search_txtP | Dual port SRAM - overview |
| title_full | Dual port SRAM - overview Doug Sheppard |
| title_fullStr | Dual port SRAM - overview Doug Sheppard |
| title_full_unstemmed | Dual port SRAM - overview Doug Sheppard |
| title_short | Dual port SRAM - overview |
| title_sort | dual port sram overview |
| topic | Random access memory Tutorials |
| topic_facet | Random access memory Tutorials Film |
| work_keys_str_mv | AT shepparddoug dualportsramoverview AT shepparddoug dualportstaticrandomaccessmemoryoverview |