OTDR theory and operation - introducing the OTDR:
The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline ap...
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Elektronisch Video |
| Sprache: | English |
| Veröffentlicht: |
United States
IEEE
2009
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| Schlagworte: | |
| Online-Zugang: | FHN01 TUM01 |
| Zusammenfassung: | The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline applications. SiGe HBT technology combines transistor performance competitive with III-V technologies such as GaAs and InP with the processing maturity, integration levels, yield, and cost commonly associated with conventional Si CMOS fabrication. First-generation SiGe HBTs can deliver: fT in excess of 50 GHz, fmax in excess of 70 GHz, minimum noise figure below 0.5 dB at 2.0 GHz, linearity efficiency (OIP3/Pdc) above 10, 1/f noise corner frequencies below 1 kHz, operation at cryogenic temperatures, excellent radiation hardness, as well as yield, reliability and cost comparable to Si. Aggressively-scaled SiGe HBTs can achieve greater than 200 GHz transistor-level performance, and thus are expected to enable Si-based solutions for >40 GB/sec data links and emerging RF, microwave, and even mm-wave systems |
| Beschreibung: | Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 12, 2020) |
| Beschreibung: | 1 Online-Resource (1 Videodatei, 60 Minuten) color illustrations |
| ISBN: | 9781424461455 |
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| 520 | |a The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline applications. SiGe HBT technology combines transistor performance competitive with III-V technologies such as GaAs and InP with the processing maturity, integration levels, yield, and cost commonly associated with conventional Si CMOS fabrication. First-generation SiGe HBTs can deliver: fT in excess of 50 GHz, fmax in excess of 70 GHz, minimum noise figure below 0.5 dB at 2.0 GHz, linearity efficiency (OIP3/Pdc) above 10, 1/f noise corner frequencies below 1 kHz, operation at cryogenic temperatures, excellent radiation hardness, as well as yield, reliability and cost comparable to Si. Aggressively-scaled SiGe HBTs can achieve greater than 200 GHz transistor-level performance, and thus are expected to enable Si-based solutions for >40 GB/sec data links and emerging RF, microwave, and even mm-wave systems | ||
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Datensatz im Suchindex
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| spelling | Johnson, Larry Verfasser aut OTDR theory and operation - introducing the OTDR Larry Johnson United States IEEE 2009 1 Online-Resource (1 Videodatei, 60 Minuten) color illustrations tdi rdacontent c rdamedia cr rdacarrier Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 12, 2020) The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline applications. SiGe HBT technology combines transistor performance competitive with III-V technologies such as GaAs and InP with the processing maturity, integration levels, yield, and cost commonly associated with conventional Si CMOS fabrication. First-generation SiGe HBTs can deliver: fT in excess of 50 GHz, fmax in excess of 70 GHz, minimum noise figure below 0.5 dB at 2.0 GHz, linearity efficiency (OIP3/Pdc) above 10, 1/f noise corner frequencies below 1 kHz, operation at cryogenic temperatures, excellent radiation hardness, as well as yield, reliability and cost comparable to Si. Aggressively-scaled SiGe HBTs can achieve greater than 200 GHz transistor-level performance, and thus are expected to enable Si-based solutions for >40 GB/sec data links and emerging RF, microwave, and even mm-wave systems Optical fibers Fiber optics (DE-588)4017102-4 Film gnd-content |
| spellingShingle | Johnson, Larry OTDR theory and operation - introducing the OTDR Optical fibers Fiber optics |
| subject_GND | (DE-588)4017102-4 |
| title | OTDR theory and operation - introducing the OTDR |
| title_auth | OTDR theory and operation - introducing the OTDR |
| title_exact_search | OTDR theory and operation - introducing the OTDR |
| title_exact_search_txtP | OTDR theory and operation - introducing the OTDR |
| title_full | OTDR theory and operation - introducing the OTDR Larry Johnson |
| title_fullStr | OTDR theory and operation - introducing the OTDR Larry Johnson |
| title_full_unstemmed | OTDR theory and operation - introducing the OTDR Larry Johnson |
| title_short | OTDR theory and operation - introducing the OTDR |
| title_sort | otdr theory and operation introducing the otdr |
| topic | Optical fibers Fiber optics |
| topic_facet | Optical fibers Fiber optics Film |
| work_keys_str_mv | AT johnsonlarry otdrtheoryandoperationintroducingtheotdr |