Semiconductor nanowires:
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam ; Boston ; Heidelberg ; London
Academic Press
2015-
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| Schriftenreihe: | Semiconductors and semimetals
|
| Schlagworte: |
Internformat
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| illustrated | Not Illustrated |
| index_date | 2024-07-03T18:08:03Z |
| indexdate | 2024-07-10T09:12:56Z |
| institution | BVB |
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| spelling | Semiconductor nanowires edited by Anna Fontcuberta i Morral, Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland; Shadi A. Dayeh, Department of Electrical and Computer Engineering, University of California, San Diego, USA; Chennupati Jagadish, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia Amsterdam ; Boston ; Heidelberg ; London Academic Press 2015- txt rdacontent c rdamedia cr rdacarrier Semiconductors and semimetals Nanodraht (DE-588)4707308-1 gnd rswk-swf Halbleiterwerkstoff (DE-588)4158817-4 gnd rswk-swf Halbleiterschalter (DE-588)4158810-1 gnd rswk-swf Halbleiterwerkstoff (DE-588)4158817-4 s Nanodraht (DE-588)4707308-1 s Halbleiterschalter (DE-588)4158810-1 s DE-604 Fontcuberta i Morral, Anna (DE-588)1081428279 edt Dayeh, Shadi A. (DE-588)108880750X edt Jagadish, Chennupati edt Erscheint auch als Druck-Ausgabe |
| spellingShingle | Semiconductor nanowires Nanodraht (DE-588)4707308-1 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd Halbleiterschalter (DE-588)4158810-1 gnd |
| subject_GND | (DE-588)4707308-1 (DE-588)4158817-4 (DE-588)4158810-1 |
| title | Semiconductor nanowires |
| title_auth | Semiconductor nanowires |
| title_exact_search | Semiconductor nanowires |
| title_exact_search_txtP | Semiconductor nanowires |
| title_full | Semiconductor nanowires edited by Anna Fontcuberta i Morral, Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland; Shadi A. Dayeh, Department of Electrical and Computer Engineering, University of California, San Diego, USA; Chennupati Jagadish, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia |
| title_fullStr | Semiconductor nanowires edited by Anna Fontcuberta i Morral, Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland; Shadi A. Dayeh, Department of Electrical and Computer Engineering, University of California, San Diego, USA; Chennupati Jagadish, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia |
| title_full_unstemmed | Semiconductor nanowires edited by Anna Fontcuberta i Morral, Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland; Shadi A. Dayeh, Department of Electrical and Computer Engineering, University of California, San Diego, USA; Chennupati Jagadish, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia |
| title_short | Semiconductor nanowires |
| title_sort | semiconductor nanowires |
| topic | Nanodraht (DE-588)4707308-1 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd Halbleiterschalter (DE-588)4158810-1 gnd |
| topic_facet | Nanodraht Halbleiterwerkstoff Halbleiterschalter |
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