Perovskite silicon tandem solar cells : two-terminal perovskite silicon tandem solar cells using optimized n-i-p perovskite solar cells
Perovskite silicon tandem solar cells: : two-terminal perovskite silicon tandem solar cells using optimized n-i-p perovskite solar cells

Abstract: Tandem solar cells have the potential to overcome the efficiency limit of single junction solar cells. The aim of this work was the realization of perovskite silicon tandem solar cells. Hybrid organic inorganic metal halide perovskites are a promising tandem partner for silicon due to thei...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Bett, Alexander Jürgen 1988- (VerfasserIn)
Format: Abschlussarbeit Elektronisch E-Book
Sprache:English
Veröffentlicht: Freiburg Universität 2020
Schlagworte:
Solar cells
Perovskite
Silicon
Hochschulschrift
Online-Zugang:https://doi.org/10.6094/UNIFR/166456
https://nbn-resolving.org/urn:nbn:de:bsz:25-freidok-1664562
https://d-nb.info/1214179703/34
kostenfrei
Zusammenfassung:Abstract: Tandem solar cells have the potential to overcome the efficiency limit of single junction solar cells. The aim of this work was the realization of perovskite silicon tandem solar cells. Hybrid organic inorganic metal halide perovskites are a promising tandem partner for silicon due to their electrical and optical properties, especially a tunable bandgap, strong absorption and high single junction solar cell efficiencies. In this work, perovskite single junction solar cells were first optimized with regard to the later application in tandem devices.
The regular n-i-p architecture (the electron contact is deposited first followed by the perovskite absorber and the hole contact) was investigated, because in this configuration the highest single junction perovskite solar cell efficiencies were achieved.<br><br>The main results of this work are summarized in the following:<br><br>Development of a low-temperature electron contact: Titanium oxide (TiOx) is widely used as electron contact in perovskite solar cells with regular n-i-p architecture. The standard fabrication route includes spray deposition of a compact TiOx layer and sintering of a mesoporous TiOx scaffold. Both processes require high temperatures ~ 500 °C which damage silicon heterojunction (SHJ) bottom solar cells allowing for high voltages and the interface between silicon and an indium tin oxide (ITO) interconnecting the two sub-cells.
Thus, a low-temperature process for TiOx was developed including evaporation and exposure to UV irradiation for the compact and mesoporous TiOx, respectively. Optimization led to a compact TiOx layer thickness of 20 nm and 200 min of UV curing.<br><br>Optimization of the transparent front hole contact: In a tandem configuration the perovskite solar cell needs to be semi-transparent. Therefore the full-area metal contact is typically replaced by a sputtered transparent conductive oxide (TCO). In order to prevent sputter damage, typically a metal oxide buffer layer is usually evaporated. However, the use of a buffer layer requires an additional process step, enhances parasitic absorption and has negative effects on stability. In this work, an ITO sputter process was directly applied on the 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) hole contact without any buffer layer.
Beschreibung:Online-Ressource
DOI:10.6094/UNIFR/166456

Es ist kein Print-Exemplar vorhanden.

Fernleihe Bestellen Achtung: Nicht im THWS-Bestand! Volltext öffnen

Ähnliche Einträge