Emerging non-volatile memory technologies: physics, engineering, and applications
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also...
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Weitere Verfasser: | , , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Singapore, Singapore
Springer
[2021]
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Schlagworte: | |
Zusammenfassung: | This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework |
Beschreibung: | Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions.- Spin Transfer Torque Magnetoresistive Random Access Memory.- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications.- Electric-field-controlled MRAM: Physics and Applications.- Chiral Magnetic Domain Wall & Skyrmion Memory Devices.- Circuit Design for Non-volatile Magnetic Memory.- Domain Wall Programmable Magnetic Logic.- 3D Nanomagnetic Logic.- Spintronics for Neuromorphic Engineering.- Resistive Random Access Memory: Device Physics and Array Architectures.- RRAM Characterization and Modelling.- RRAM-based Neuromorphic Computing Systems.- An Automatic Sound Classification Framework with Non-Volatile Memory |
Beschreibung: | viii, 438, C1 Seiten Illustrationen, Diagramme 834 grams |
ISBN: | 9789811569104 |
Internformat
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520 | |a This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework | ||
650 | 4 | |a Magnetism | |
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Datensatz im Suchindex
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spelling | Emerging non-volatile memory technologies physics, engineering, and applications Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors Singapore, Singapore Springer [2021] viii, 438, C1 Seiten Illustrationen, Diagramme 834 grams txt rdacontent n rdamedia nc rdacarrier Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions.- Spin Transfer Torque Magnetoresistive Random Access Memory.- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications.- Electric-field-controlled MRAM: Physics and Applications.- Chiral Magnetic Domain Wall & Skyrmion Memory Devices.- Circuit Design for Non-volatile Magnetic Memory.- Domain Wall Programmable Magnetic Logic.- 3D Nanomagnetic Logic.- Spintronics for Neuromorphic Engineering.- Resistive Random Access Memory: Device Physics and Array Architectures.- RRAM Characterization and Modelling.- RRAM-based Neuromorphic Computing Systems.- An Automatic Sound Classification Framework with Non-Volatile Memory This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework Magnetism Magnetic materials Optical materials Electronic materials Electronic circuits Spectroscopy Solid state physics Physics Spintronik (DE-588)7755384-6 gnd rswk-swf Resistive RAM (DE-588)1218619082 gnd rswk-swf Elektrizität, Magnetismus, Optik (DE-588)4143413-4 Aufsatzsammlung gnd-content Resistive RAM (DE-588)1218619082 s Spintronik (DE-588)7755384-6 s DE-604 Lew, Wen Siang edt Lim, Gerard Joseph edt Dananjaya, Putu Andhita edt Erscheint auch als Online-Ausgabe 978-981-15-6912-8 |
spellingShingle | Emerging non-volatile memory technologies physics, engineering, and applications Magnetism Magnetic materials Optical materials Electronic materials Electronic circuits Spectroscopy Solid state physics Physics Spintronik (DE-588)7755384-6 gnd Resistive RAM (DE-588)1218619082 gnd |
subject_GND | (DE-588)7755384-6 (DE-588)1218619082 (DE-588)4143413-4 |
title | Emerging non-volatile memory technologies physics, engineering, and applications |
title_auth | Emerging non-volatile memory technologies physics, engineering, and applications |
title_exact_search | Emerging non-volatile memory technologies physics, engineering, and applications |
title_exact_search_txtP | Emerging non-volatile memory technologies physics, engineering, and applications |
title_full | Emerging non-volatile memory technologies physics, engineering, and applications Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors |
title_fullStr | Emerging non-volatile memory technologies physics, engineering, and applications Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors |
title_full_unstemmed | Emerging non-volatile memory technologies physics, engineering, and applications Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors |
title_short | Emerging non-volatile memory technologies |
title_sort | emerging non volatile memory technologies physics engineering and applications |
title_sub | physics, engineering, and applications |
topic | Magnetism Magnetic materials Optical materials Electronic materials Electronic circuits Spectroscopy Solid state physics Physics Spintronik (DE-588)7755384-6 gnd Resistive RAM (DE-588)1218619082 gnd |
topic_facet | Magnetism Magnetic materials Optical materials Electronic materials Electronic circuits Spectroscopy Solid state physics Physics Spintronik Resistive RAM Aufsatzsammlung |
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