Holdings: Nanoelectronics :: THWS Bibkatalog

Nanoelectronics: device physics, fabrication, simulation

The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devic...

Full description

Saved in:

Bibliographic Details
Main Author:	Knoch, Joachim 1972- (Author)
Format:	Electronic eBook
Language:	English
Published:	München ; Wien De Gruyter Oldenbourg [2021]
Series:	De Gruyter Textbook
Subjects:	SCIENCE / Physics / Condensed Matter Quantenphysik Drei-Fünf-Halbleiter Halbleitertechnologie Feldeffekttransistor Nanoelektronik Festkörperphysik MOS-FET
Online Access:	DE-1043 DE-1046 DE-858 DE-859 DE-860 DE-29 DE-739 Volltext
Summary:	The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well
Item Description:	E-Book bereits im Dezember 2020 erschienen.
Physical Description:	1 Online-Ressource (XVI, 390 pages)
ISBN:	9783110575507
DOI:	10.1515/9783110575507

Staff View

MARC


LEADER	00000nam a2200000zc 4500
001	BV047112085
003	DE-604
005	20211210
007	cr\|uuu---uuuuu
008	210129s2021 xx o\|\|\|\| 00\|\|\| eng d
020			\|a 9783110575507 \|9 978-3-11-057550-7
024	7		\|a 10.1515/9783110575507 \|2 doi
035			\|a (ZDB-23-DGG)9783110575507
035			\|a (OCoLC)1235893151
035			\|a (DE-599)BVBBV047112085
040			\|a DE-604 \|b ger \|e rda
041	0		\|a eng
049			\|a DE-1043 \|a DE-1046 \|a DE-858 \|a DE-859 \|a DE-860 \|a DE-29 \|a DE-739 \|a DE-83
084			\|a ZN 4900 \|0 (DE-625)157417: \|2 rvk
084			\|a ZN 3700 \|0 (DE-625)157333: \|2 rvk
084			\|a UK 8300 \|0 (DE-625)145811: \|2 rvk
100	1		\|a Knoch, Joachim \|d 1972- \|e Verfasser \|0 (DE-588)12335059X \|4 aut
245	1	0	\|a Nanoelectronics \|b device physics, fabrication, simulation \|c Joachim Knoch
264		1	\|a München ; Wien \|b De Gruyter Oldenbourg \|c [2021]
264		4	\|c © 2021
300			\|a 1 Online-Ressource (XVI, 390 pages)
336			\|b txt \|2 rdacontent
337			\|b c \|2 rdamedia
338			\|b cr \|2 rdacarrier
490	0		\|a De Gruyter Textbook
500			\|a E-Book bereits im Dezember 2020 erschienen.
520			\|a The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well
546			\|a In English
650		7	\|a SCIENCE / Physics / Condensed Matter \|2 bisacsh
650	0	7	\|a Quantenphysik \|0 (DE-588)4266670-3 \|2 gnd \|9 rswk-swf
650	0	7	\|a Drei-Fünf-Halbleiter \|0 (DE-588)4150649-2 \|2 gnd \|9 rswk-swf
650	0	7	\|a Halbleitertechnologie \|0 (DE-588)4158814-9 \|2 gnd \|9 rswk-swf
650	0	7	\|a Feldeffekttransistor \|0 (DE-588)4131472-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Nanoelektronik \|0 (DE-588)4732034-5 \|2 gnd \|9 rswk-swf
650	0	7	\|a Festkörperphysik \|0 (DE-588)4016921-2 \|2 gnd \|9 rswk-swf
650	0	7	\|a MOS-FET \|0 (DE-588)4207266-9 \|2 gnd \|9 rswk-swf
689	0	0	\|a Nanoelektronik \|0 (DE-588)4732034-5 \|D s
689	0	1	\|a Feldeffekttransistor \|0 (DE-588)4131472-4 \|D s
689	0	2	\|a MOS-FET \|0 (DE-588)4207266-9 \|D s
689	0	3	\|a Drei-Fünf-Halbleiter \|0 (DE-588)4150649-2 \|D s
689	0	4	\|a Halbleitertechnologie \|0 (DE-588)4158814-9 \|D s
689	0	5	\|a Festkörperphysik \|0 (DE-588)4016921-2 \|D s
689	0	6	\|a Quantenphysik \|0 (DE-588)4266670-3 \|D s
689	0		\|5 DE-604
776	0	8	\|i Erscheint auch als \|n Druck-Ausgabe \|z 9783110574210
856	4	0	\|u https://doi.org/10.1515/9783110575507 \|x Verlag \|z URL des Erstveröffentlichers \|3 Volltext
912			\|a ZDB-23-DGG
912			\|a ZDB-23-DPC
943	1		\|a oai:aleph.bib-bvb.de:BVB01-032518524
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-1043 \|p ZDB-23-DGG \|q FAB_PDA_DGG \|x Verlag \|3 Volltext
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-1046 \|p ZDB-23-DGG \|q FAW_PDA_DGG \|x Verlag \|3 Volltext
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-858 \|p ZDB-23-DGG \|q FCO_PDA_DGG \|x Verlag \|3 Volltext
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-859 \|p ZDB-23-DGG \|q FKE_PDA_DGG \|x Verlag \|3 Volltext
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-860 \|p ZDB-23-DGG \|q FLA_PDA_DGG \|x Verlag \|3 Volltext
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-29 \|p ZDB-23-DGG \|q UER_PDA_DGG_Kauf \|x Verlag \|3 Volltext
966	e		\|u https://doi.org/10.1515/9783110575507 \|l DE-739 \|p ZDB-23-DGG \|q UPA_PDA_DGG \|x Verlag \|3 Volltext

Record in the Search Index

_version_	1824507761869717504
adam_text
adam_txt
any_adam_object
any_adam_object_boolean
author	Knoch, Joachim 1972-
author_GND	(DE-588)12335059X
author_facet	Knoch, Joachim 1972-
author_role	aut
author_sort	Knoch, Joachim 1972-
author_variant	j k jk
building	Verbundindex
bvnumber	BV047112085
classification_rvk	ZN 4900 ZN 3700 UK 8300
collection	ZDB-23-DGG ZDB-23-DPC
ctrlnum	(ZDB-23-DGG)9783110575507 (OCoLC)1235893151 (DE-599)BVBBV047112085
discipline	Physik Elektrotechnik / Elektronik / Nachrichtentechnik
discipline_str_mv	Physik Elektrotechnik / Elektronik / Nachrichtentechnik
doi_str_mv	10.1515/9783110575507
format	Electronic eBook
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000zc 4500</leader><controlfield tag="001">BV047112085</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20211210</controlfield><controlfield tag="007">cr\|uuu---uuuuu</controlfield><controlfield tag="008">210129s2021 xx o\|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783110575507</subfield><subfield code="9">978-3-11-057550-7</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1515/9783110575507</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-23-DGG)9783110575507</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1235893151</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV047112085</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1043</subfield><subfield code="a">DE-1046</subfield><subfield code="a">DE-858</subfield><subfield code="a">DE-859</subfield><subfield code="a">DE-860</subfield><subfield code="a">DE-29</subfield><subfield code="a">DE-739</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4900</subfield><subfield code="0">(DE-625)157417:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3700</subfield><subfield code="0">(DE-625)157333:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UK 8300</subfield><subfield code="0">(DE-625)145811:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Knoch, Joachim</subfield><subfield code="d">1972-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)12335059X</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nanoelectronics</subfield><subfield code="b">device physics, fabrication, simulation</subfield><subfield code="c">Joachim Knoch</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">München ; Wien</subfield><subfield code="b">De Gruyter Oldenbourg</subfield><subfield code="c">[2021]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">© 2021</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XVI, 390 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">De Gruyter Textbook</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">E-Book bereits im Dezember 2020 erschienen.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In English</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE / Physics / Condensed Matter</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Quantenphysik</subfield><subfield code="0">(DE-588)4266670-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanoelektronik</subfield><subfield code="0">(DE-588)4732034-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörperphysik</subfield><subfield code="0">(DE-588)4016921-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Nanoelektronik</subfield><subfield code="0">(DE-588)4732034-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Festkörperphysik</subfield><subfield code="0">(DE-588)4016921-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="6"><subfield code="a">Quantenphysik</subfield><subfield code="0">(DE-588)4266670-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9783110574210</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-23-DGG</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-23-DPC</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032518524</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-1043</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FAB_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-1046</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FAW_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-858</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FCO_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-859</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FKE_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-860</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FLA_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-29</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">UER_PDA_DGG_Kauf</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783110575507</subfield><subfield code="l">DE-739</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">UPA_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection>
id	DE-604.BV047112085
illustrated	Not Illustrated
index_date	2024-07-03T16:26:43Z
indexdate	2025-02-19T17:29:52Z
institution	BVB
isbn	9783110575507
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-032518524
oclc_num	1235893151
open_access_boolean
owner	DE-1043 DE-1046 DE-858 DE-859 DE-860 DE-29 DE-739 DE-83
owner_facet	DE-1043 DE-1046 DE-858 DE-859 DE-860 DE-29 DE-739 DE-83
physical	1 Online-Ressource (XVI, 390 pages)
psigel	ZDB-23-DGG ZDB-23-DPC ZDB-23-DGG FAB_PDA_DGG ZDB-23-DGG FAW_PDA_DGG ZDB-23-DGG FCO_PDA_DGG ZDB-23-DGG FKE_PDA_DGG ZDB-23-DGG FLA_PDA_DGG ZDB-23-DGG UER_PDA_DGG_Kauf ZDB-23-DGG UPA_PDA_DGG
publishDate	2021
publishDateSearch	2021
publishDateSort	2021
publisher	De Gruyter Oldenbourg
record_format	marc
series2	De Gruyter Textbook
spelling	Knoch, Joachim 1972- Verfasser (DE-588)12335059X aut Nanoelectronics device physics, fabrication, simulation Joachim Knoch München ; Wien De Gruyter Oldenbourg [2021] © 2021 1 Online-Ressource (XVI, 390 pages) txt rdacontent c rdamedia cr rdacarrier De Gruyter Textbook E-Book bereits im Dezember 2020 erschienen. The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well In English SCIENCE / Physics / Condensed Matter bisacsh Quantenphysik (DE-588)4266670-3 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 gnd rswk-swf Festkörperphysik (DE-588)4016921-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 s Feldeffekttransistor (DE-588)4131472-4 s MOS-FET (DE-588)4207266-9 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s Halbleitertechnologie (DE-588)4158814-9 s Festkörperphysik (DE-588)4016921-2 s Quantenphysik (DE-588)4266670-3 s DE-604 Erscheint auch als Druck-Ausgabe 9783110574210 https://doi.org/10.1515/9783110575507 Verlag URL des Erstveröffentlichers Volltext
spellingShingle	Knoch, Joachim 1972- Nanoelectronics device physics, fabrication, simulation SCIENCE / Physics / Condensed Matter bisacsh Quantenphysik (DE-588)4266670-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd MOS-FET (DE-588)4207266-9 gnd
subject_GND	(DE-588)4266670-3 (DE-588)4150649-2 (DE-588)4158814-9 (DE-588)4131472-4 (DE-588)4732034-5 (DE-588)4016921-2 (DE-588)4207266-9
title	Nanoelectronics device physics, fabrication, simulation
title_auth	Nanoelectronics device physics, fabrication, simulation
title_exact_search	Nanoelectronics device physics, fabrication, simulation
title_exact_search_txtP	Nanoelectronics device physics, fabrication, simulation
title_full	Nanoelectronics device physics, fabrication, simulation Joachim Knoch
title_fullStr	Nanoelectronics device physics, fabrication, simulation Joachim Knoch
title_full_unstemmed	Nanoelectronics device physics, fabrication, simulation Joachim Knoch
title_short	Nanoelectronics
title_sort	nanoelectronics device physics fabrication simulation
title_sub	device physics, fabrication, simulation
topic	SCIENCE / Physics / Condensed Matter bisacsh Quantenphysik (DE-588)4266670-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd MOS-FET (DE-588)4207266-9 gnd
topic_facet	SCIENCE / Physics / Condensed Matter Quantenphysik Drei-Fünf-Halbleiter Halbleitertechnologie Feldeffekttransistor Nanoelektronik Festkörperphysik MOS-FET
url	https://doi.org/10.1515/9783110575507
work_keys_str_mv	AT knochjoachim nanoelectronicsdevicephysicsfabricationsimulation

Holdings

There is no print copy available.

Interlibrary loan Place Request Caution: Not in THWS collection! Get full text

MARC

Record in the Search Index

There is no print copy available.

Similar Items