Verfügbarkeit: Nanoelectronics

Nanoelectronics: device physics, fabrication, simulation

The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devic...

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Bibliographische Detailangaben
1. Verfasser:	Knoch, Joachim 1972- (VerfasserIn)
Format:	Elektronisch E-Book
Sprache:	English
Veröffentlicht:	München ; Wien De Gruyter Oldenbourg [2021]
Schriftenreihe:	De Gruyter Textbook
Schlagworte:	SCIENCE / Physics / Condensed Matter Nanoelektronik Festkörperphysik Halbleitertechnologie Feldeffekttransistor MOS-FET Drei-Fünf-Halbleiter Quantenphysik
Online-Zugang:	FAB01 FAW01 FCO01 FHA01 FKE01 FLA01 UER01 UPA01 Volltext
Zusammenfassung:	The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well
Beschreibung:	E-Book bereits im Dezember 2020 erschienen.
Beschreibung:	1 Online-Ressource (XVI, 390 pages)
ISBN:	9783110575507
DOI:	10.1515/9783110575507

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spelling	Knoch, Joachim 1972- Verfasser (DE-588)12335059X aut Nanoelectronics device physics, fabrication, simulation Joachim Knoch München ; Wien De Gruyter Oldenbourg [2021] © 2021 1 Online-Ressource (XVI, 390 pages) txt rdacontent c rdamedia cr rdacarrier De Gruyter Textbook E-Book bereits im Dezember 2020 erschienen. The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well In English SCIENCE / Physics / Condensed Matter bisacsh Nanoelektronik (DE-588)4732034-5 gnd rswk-swf Festkörperphysik (DE-588)4016921-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Quantenphysik (DE-588)4266670-3 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 s Feldeffekttransistor (DE-588)4131472-4 s MOS-FET (DE-588)4207266-9 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s Halbleitertechnologie (DE-588)4158814-9 s Festkörperphysik (DE-588)4016921-2 s Quantenphysik (DE-588)4266670-3 s DE-604 Erscheint auch als Druck-Ausgabe 9783110574210 https://doi.org/10.1515/9783110575507 Verlag URL des Erstveröffentlichers Volltext
spellingShingle	Knoch, Joachim 1972- Nanoelectronics device physics, fabrication, simulation SCIENCE / Physics / Condensed Matter bisacsh Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd MOS-FET (DE-588)4207266-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Quantenphysik (DE-588)4266670-3 gnd
subject_GND	(DE-588)4732034-5 (DE-588)4016921-2 (DE-588)4158814-9 (DE-588)4131472-4 (DE-588)4207266-9 (DE-588)4150649-2 (DE-588)4266670-3
title	Nanoelectronics device physics, fabrication, simulation
title_auth	Nanoelectronics device physics, fabrication, simulation
title_exact_search	Nanoelectronics device physics, fabrication, simulation
title_exact_search_txtP	Nanoelectronics device physics, fabrication, simulation
title_full	Nanoelectronics device physics, fabrication, simulation Joachim Knoch
title_fullStr	Nanoelectronics device physics, fabrication, simulation Joachim Knoch
title_full_unstemmed	Nanoelectronics device physics, fabrication, simulation Joachim Knoch
title_short	Nanoelectronics
title_sort	nanoelectronics device physics fabrication simulation
title_sub	device physics, fabrication, simulation
topic	SCIENCE / Physics / Condensed Matter bisacsh Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd MOS-FET (DE-588)4207266-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Quantenphysik (DE-588)4266670-3 gnd
topic_facet	SCIENCE / Physics / Condensed Matter Nanoelektronik Festkörperphysik Halbleitertechnologie Feldeffekttransistor MOS-FET Drei-Fünf-Halbleiter Quantenphysik
url	https://doi.org/10.1515/9783110575507
work_keys_str_mv	AT knochjoachim nanoelectronicsdevicephysicsfabricationsimulation

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