Nanoelectronics: device physics, fabrication, simulation
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| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
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De Gruyter
[2021]
|
| Schriftenreihe: | De Gruyter graduate
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| Beschreibung: | XVI, 390 Seiten Illustrationen, Diagramme 24 cm x 17 cm, 684 g |
| ISBN: | 9783110574210 3110574217 |
Internformat
MARC
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| 020 | |a 3110574217 |9 3-11-057421-7 | ||
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| 100 | 1 | |a Knoch, Joachim |d 1972- |e Verfasser |0 (DE-588)12335059X |4 aut | |
| 245 | 1 | 0 | |a Nanoelectronics |b device physics, fabrication, simulation |c Joachim Knoch |
| 264 | 1 | |a Berlin ; Boston |b De Gruyter |c [2021] | |
| 264 | 4 | |c © 2021 | |
| 300 | |a XVI, 390 Seiten |b Illustrationen, Diagramme |c 24 cm x 17 cm, 684 g | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a De Gruyter graduate | |
| 650 | 0 | 7 | |a Quantenphysik |0 (DE-588)4266670-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nanoelektronik |0 (DE-588)4732034-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Festkörperphysik |0 (DE-588)4016921-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 653 | |a TB: Textbook | ||
| 689 | 0 | 0 | |a Nanoelektronik |0 (DE-588)4732034-5 |D s |
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| 689 | 1 | 1 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 1 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
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| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, EPUB |z 978-3-11-057555-2 |
| 856 | 4 | 2 | |m X:MVB |u http://www.degruyter.com/search?f_0=isbnissn&q_0=9783110574210&searchTitles=true |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032473948&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
Datensatz im Suchindex
| DE-BY-862_location | 2000 |
|---|---|
| DE-BY-FWS_call_number | 2000/ZN 3700 K72 |
| DE-BY-FWS_katkey | 924152 |
| DE-BY-FWS_media_number | 083000522171 |
| _version_ | 1806528130545876992 |
| adam_text |
CONTENTS
PREFACE
*
VII
HOW
TO
USE
THE
BOOK
-----
IX
1
INTRODUCTION
*
1
2
SOLID-STATE
PHYSICS
FOUNDATION
*
3
2.1
SCHRODINGER
EQUATION
*
3
2.1.1
SCHRODINGER
EQUATION
IN
ID
-----
3
2.1.2
THE
PARTIDE-IN-THE-BOX
-----
4
2.2
FREE
ELECTRONS
IN
VARIOUS
DIMENSIONS
*
5
2.2.1
FROM
3D
TO
2D
SYSTEMS
-----
6
2.2.2
FROM
2D
TO
ID
SYSTEMS
-----
7
2.2.3
FROM
ID
TO
OD
SYSTEMS
-----
8
2.3
ELECTRONS
IN
SOLIDS
-
BRAVAIS
LATTICE,
WIGNER-SEITZ
CELL,
BRILLOUIN
ZONE
AND
RELATED
CONCEPTS
-----
9
2.3.1
RECIPROCAL
SPACE
-----
12
2.3.2
THE
BRILLOUIN
ZONE
-----
13
2.4
TIGHT-BINDING
CALCULATION
OF
BAND
STRUCTURES
-----
14
2.4.1
DISCRETE
SCHRODINGER
EQUATION
-----
15
2.4.2
LINEAR
COMBINATION
OF
ATOMIC
ORBITALS
-----
17
2.4.3
PERIODIC
POTENTIALS
-
TIGHT
BINDING
IN
ID
-----20
2.4.4
TIGHT
BINDING
IN
2D
-----
24
2.4.5
OVERLAP
INTEGRALS
-----
26
2.4.6
RECIPE
FOR
GENERAL
TIGHT-BINDING
METHOD
-----29
2.5
EFFECTIVE
MASS
APPROXIMATION
------32
2.5.1
EFFECTIVE
MASS
TENSOR
-----34
2.5.2
ENERGY-DEPENDENT
EFFECTIVE
MASS
-
35
2.6
BULK
MATERIALS
-----36
2.6.1
SILICON
-
CRYSTAL
STRUCTURE
AND
MATERIAL
PROPERTIES
*
36
2.6.2
TIGHT-BINDING
CALCULATION
OF
SILICON
-----39
2.6.3
BAND
STRUCTURE
OF
SILICON
-----
41
2.7
TWO-DIMENSIONAL
MATERIALS
-----43
2.7.1
MONOLAYER
GRAPHENE
-----
43
2.7.2
BILAYER
GRAPHENE
-----
46
2.7.3
TRANSITION
METAL
DICHALCOGENIDES
-----
49
2.7.4
OTHER
TWO-DIMENSIONAL
MATERIALS
------
52
2.7.5
GRAPHENE
NANORIBBONS
-----
52
2.8
CARBON
NANOTUBES
-----
54
XII
*
*
CONTENTS
2.9
THE
FERMI
DISTRIBUTION
FUNCTION
*
60
2.9.1
THE
FERMI
DISTRIBUTION
FOR
HOLES
*
64
2.9.2
FERMI
DISTRIBUTION
FUNCTION
FOR
DOPANTS
*
64
2.10
CARRIER
DENSITY
*
67
2.10.1
DENSITY
OF
STATES
*
68
2.10.2
DENSITY
OF
STATES
IN
THE
CASE
OF
ANISOTROPIC
EFFECTIVE
MASSES
*
71
2.10.3
FERMI
INTEGRALS
-----
72
2.10.4
DENSITY
OF
STATES
OF
GRAPHENE
*
74
2.10.5
DENSITY
OF
STATES
OF
CARBON
NANOTUBES
*
74
2.11
CURRENT
FLOW
*
76
2.11.1
QUASI-CLASSICAL
APPROACH
-----
76
2.11.2
LANDAUER
FORMALISM
-----
79
2.11.3
MULTIMODE
TRANSPORT
-----83
3
SEMICONDUCTOR
FABRICATION
*
85
3.1
WAFER
CLEANING
*
85
3.1.1
SOLVENTS
*
85
3.1.2
PIRANHA
CLEANING
SOLUTION
*
86
3.1.3
RCA
CLEAN
-----
87
3.2
OXIDATION
OF
SILICON
*
90
3.2.1
THERMAL
OXIDATION
*
91
3.2.2
LOCAL
AND
GEOMETRY-DEPENDENT
OXIDATION
OF
SILICON
*
94
3.2.3
CHEMICAL
OXIDATION
OF
SILICON
*
94
3.3
RAPID
THERMAL
NITRIDATION
*
96
3.4
LITHOGRAPHY
*
97
3.4.1
RESIST
COATING
*
97
3.4.2
OPTICAL
LITHOGRAPHY
*
98
3.4.3
ELECTRON-BEAM
LITHOGRAPHY
*
108
3.4.4
SPACER
PATTERNING
*
114
3.5
WET
CHEMICAL
ETCHING
*
116
3.5.1
ETCHING
OF
OXIDES
*
117
3.5.2
ETCHING
OF
SILICON
NITRIDE
*
118
3.5.3
(DIGITAL-)
ETCHING
OF
SILICON
*
118
3.5.4
ANISOTROPIC
SILICON
ETCHING
*
119
3.6
DRY
ETCHING
-----
122
3.6.1
REACTIVE
ION
ETCHING
*
123
3.6.2
INDUCTIVELY
COUPLED
PLASMA
ETCHING
*
125
3.6.3
TUNING
THE
ANISOTROPY
OF
DRY
ETCHING
*
125
3.6.4
SELECTIVITY
OF
DRY
ETCHING
*
127
3.6.5
PLASMA
ETCHING
-----
128
3.6.6
SEQUENTIAL
ETCH
PROCESS
1
-
ATOMIC
LAYER
ETCHING
*
128
3.6.7
SEQUENTIAL
ETCH
PROCESS
II
-
BOSCH
PROCESS
*
130
CONTENTS
*
XIII
3.6.8
3.6.9
3.7
3.7.1
3.7.2
3.7.3
3.7.4
3.8
3.9
3.10
3.10.1
3.10.2
3.11
3.11.1
3.11.2
3.11.3
3.11.4
ISSUES
OF
DRY
ETCHING
-
MASK
EROSION
AND
OVER-POLYMERIZATION
*
132
ISSUES
OF
DRY
ETCHING
-
ARDE,
MICROLOADING,
TRENCHING,
GRASSING
-----
133
THIN
FILM
DEPOSITION
-----
134
CHEMICAL
VAPOR
DEPOSITION
-
LOW
PRESSURE
CVD
*
135
CHEMICAL
VAPOR
DEPOSITION
-
PLASMA-ENHANCED
CVD
*
137
PHYSICAL
VAPOR
DEPOSITION
-
ELECTRON-BEAM
EVAPORATION
*
139
PHYSICAL
VAPOR
DEPOSITION
-
SPUTTER
DEPOSITION
*
140
DAMASCENE
PROCESS
*
142
ION
IMPLANTATION
AND
ACTIVATION
*
144
SILICIDATION
-----
145
NICKEL
SILICIDATION
-----
147
DOPANT
SEGREGATION
DURING
NICKEL
SILICIDATION
*
148
LOW-DIMENSIONAL
SEMICONDUCTORS
*
150
TOP-DOWN
FABRICATION
OF
NANOWIRES
*
151
GROWTH
OF
NANOWIRES
-----
152
2D
MATERIALS
-
EXFOLIATION
AND
VISIBILITY
ON
SUBSTRATES
*
154
2D
MATERIALS
TRANSFER
-
PVA/PMMA
METHOD
-----
156
4
4.1
4.1.1
4.2
4.3
4.3.1
4.3.2
4.4
4.4.1
4.4.2
4.4.3
4.4.4
4.4.5
4.5
4.5.1
4.5.2
4.5.3
4.5.4
4.6
BASIC
INGREDIENTS
FOR
NANOELECTRONICS
DEVICES
*
160
DOPING
OF
SEMICONDUCTORS
-----
160
DEGENERATE
DOPING
CONCENTRATION
*
163
P-N-JUNCTIONS
-----
165
DOPING
AT
THE
NANOSCALE
*
168
HYDROGEN-MODEL
FOR
ACTIVATION
OF
DOPANTS
*
168
DEACTIVATION
OF
DOPANTS
IN
NANOSCALE
STRUCTURES
*
172
METAL-OXIDE-SEMICONDUCTOR
CAPACITOR
*
174
DEPLETION
CAPACITANCE
*
177
INTERFACE-STATES
CAPACITANCE
*
178
DENSITY-OF-STATES
OR
QUANTUM
CAPACITANCE
*
179
ACCUMULATION
CAPACITANCE
*
184
GATE
DIELECTRICS
WITH
HIGH
DIELECTRIC
CONSTANT
*
185
METAL-SEMICONDUCTOR
CONTACTS
*
187
FERMI
LEVEL
PINNING
-----
188
MS-CONTACTS
TO
HIGHLY
DOPED
SEMICONDUCTORS
-----
192
FERMI
LEVEL
DEPINNING
WITH
ULTRATHIN
INSULATORS
*
193
TRANSFER
LENGTH
OF
CONTACTS
*
194
HETEROSTRUCTURES
*
196
5
5.1
5.2
METAL-OXIDE-SEMICONDUCTOR
FIELD-EFFECT
TRANSISTORS
*
197
OPERATION
PRINCIPLES
-
GRADUAL
CHANNEL
APPROXIMATION
*
197
NANOSCALE
TRANSISTORS
WITH
BALLISTIC
TRANSPORT
-
FROM
ID
TO
2D
TO
BULK
MOSFETS
-----
199
XIV
*
CONTENTS
5.2.1
DEPENDENCE
ON
TERMINAL
VOLTAGES
-
TOP-OF-THE-BARRIER
MODEL
*
203
5.2.2
OFF-STATE
-----
207
5.2.3
ON-STATE
-
OUTPUT
CHARACTERISTICS
*
209
5.2.4
ON-STATE
-
TRANSFER
CHARACTERISTICS
*
211
5.3
IMPACT
OF
SCATTERING
*
212
5.4
OPTIMIZING
THE
PERFORMANCE
OF
MOSFETS
-----
213
5.5
A
SIMPLE
MODEL
FOR
THE
ELECTROSTATICS
*
214
5.6
SCALING
AND
THE
APPEARANCE
OF
SHORT-CHANNEL
EFFECTS
*
218
5.7
ULTRATHIN-BODY
FIELD-EFFECT
TRANSISTORS
-----
220
5.7.1
SINGLE-GATE
ULTRATHIN-BODY
SOI-MOSFETS
------
221
5.7.2
MULTIGATE
NANOWIRE
FETS
-----
223
5.8
ULTIMATE
SCALING
OF
MOSFETS
-----
225
5.8.1
CLASSICAL
AND
QUANTUM
CAPACITANCE
LIMITS
*
225
5.8.2
REDUCING
PARASITIC
CAPACITANCES
WITH
NANOWIRE
BUNDLES
*
227
5.8.3
TUNNELING
THROUGH
THE
GATE
DIELECTRIC
*
229
5.8.4
DIRECT
SOURCE-DRAIN
TUNNELING
*
231
6
DEVICE
SIMULATION
*
234
6.1
POISSON
*
S
EQUATION
IN
ID
DEVICES
*
234
6.1.1
FINITE
DIFFERENCE
DISCRETIZATION
*
234
6.1.2
CONFORMAL
MAPPING
-----
239
6.2
NON-EQUILIBRIUM
GREEN
*
S
FUNCTION
FORMALISM
IN
SINGLE-BAND
ID-FETS
-----
242
6.2.1
THE
GREEN
*
S
FUNCTION
-----
242
6.2.2
DISCRETIZATION
OF
THE
GREEN
*
S
FUNCTION
*
245
6.2.3
INCLUDING
CONTACTS
-----
247
6.2.4
CARRIER
DENSITY
IN
NON-EQUILIBRIUM
*
250
6.2.5
SELF-CONSISTENCY
-----
252
6.2.6
CURRENT
FLOW
-----
254
6.3
EXTENSIONS
OF
THE
ID
NEGF
------
255
6.3.1
SCATTERING
WITH
BUETTIKER
PROBES
-----
255
6.3.2
GATE
LEAKAGE
WITH
BUETTIKER
CONTACTS
*
258
6.3.3
MULTI-MODE
TRANSPORT
WITH
INDEPENDENT
ID
SUBBANDS
*
261
6.3.4
INCLUDING
CONDUCTION
AND
VALENCE
BANDS
-
ENERGY-DEPENDENT
EFFECTIVE
MASS
-----
262
6.3.5
INCLUDING
CONDUCTION
AND
VALENCE
BANDS
-
ID
SIMULATION
WITH
TWO-BAND
TIGHT-BINDING
CALCULATION
*
263
6.4
SIMULATIONS
OF
DEVICES
IN
HIGHER-DIMENSIONS
*
266
6.4.1
POISSON
EQUATION
*
266
6.4.2
NEGF
DEVICES
IN
2D/3D
-----
268
7
METAL-SOURCE-DRAIN
FIELD-EFFECT
TRANSISTORS
*
270
CONTENTS
*
*
XV
7.1
7.1.1
7.1.2
7.2
OPERATING
PRINCIPLES
OF
SB-MOSFETS
-----
272
ULTRATHIN-BODY
SB-MOSFETS
-----
276
OUTPUT
CHARACTERISTICS
*
286
SCHOTTKY-BARRIER
LOWERING
WITH
DOPANT
SEGREGATION
DURING
SILICIDATION
-----
289
7.2.1
7.2.2
7.3
7.3.1
7.3.2
7.4
MEASUREMENTS
AND
DISCUSSION
*
292
TEMPERATURE-DEPENDENT
MEASUREMENTS
*
292
INTERFACE
ENGINEERING
WITH
DEPINNING
LAYERS
*
295
METAL
SOURCE/DRAIN
DEVICE
USING
INTERFACE
ENGINEERING
*
295
HORIZONTAL
METAL-INSULATOR
CONTACTS
*
297
RECONFIGURABLE
DEVICES
*
298
8
8.1
8.1.1
8.1.2
8.1.3
8.1.4
8.2
CARBON
NANOTUBE
FIELD-EFFECT
TRANSISTORS
*
303
CARBON
NANOTUBE
FETS
AS
SB-MOSFETS
-----
303
IMPACT
OF
THE
DEVICE
GEOMETRY
*
303
MULTI-MODE
TRANSPORT
IN
CNTFETS
-----
305
CONTACT
FORMATION
TO
CNTS
-----
311
RECONFIGURABLE
CONTACTS
*
317
CONVENTIONAL
CNTFET
DEVICES
*
320
9
9.1
9.1.1
9.1.2
9.1.3
9.2
9.2.1
9.2.2
9.2.3
9.2.4
STEEP
SLOPE
TRANSISTORS
*
322
BAND-TO-BAND
TUNNEL
FIELD-EFFECT
TRANSISTORS
*
323
OPERATING
PRINCIPLES
OF
TFETS
-
OFF-STATE
-----
324
OPERATING
PRINCIPLES
OF
TFETS
-
ON-STATE
*
331
TFET
OPTIMIZATION
*
337
ALTERNATIVE
STEEP-SLOPE
TRANSISTOR
CONCEPTS
*
346
TFETS
WITH
LINE-TUNNELING
-----
347
ENERGY-FILTERING
DEVICES
*
349
IMPACT
IONIZATION
FIELD-EFFECT
TRANSISTORS
*
351
FIELD-EFFECT
CONTROLLED
MODULATION
OF
THE
BAND
GAP
*
354
10
10.1
10.1.1
10.1.2
10.1.3
10.2
10.2.1
10.3
DEVICE
BASED
ON
TWO-DIMENSIONAL
MATERIALS
*
357
GRAPHENE
FETS
-----
357
GRAPHENE
FETS
-
CONTACTS
*
359
GRAPHENE
NANORIBBON
FETS
-----
363
BILAYER
GRAPHENE
-----
365
TRANSITION
METAL
DICHALCOGENIDES
*
366
RECONFIGURABLE
TMDC-FETS
WITH
TRIPLE-GATE
STRUCTURES
-----
368
VAN
DERWAALS
HETEROSTRUCTURES
*
371
A
COLOR
MAP
FOR
2D
MATERIALS
*
375
XVI
*
CONTENTS
BIBLIOGRAPHY
*
377
INDEX
*
389 |
| adam_txt |
CONTENTS
PREFACE
*
VII
HOW
TO
USE
THE
BOOK
-----
IX
1
INTRODUCTION
*
1
2
SOLID-STATE
PHYSICS
FOUNDATION
*
3
2.1
SCHRODINGER
EQUATION
*
3
2.1.1
SCHRODINGER
EQUATION
IN
ID
-----
3
2.1.2
THE
PARTIDE-IN-THE-BOX
-----
4
2.2
FREE
ELECTRONS
IN
VARIOUS
DIMENSIONS
*
5
2.2.1
FROM
3D
TO
2D
SYSTEMS
-----
6
2.2.2
FROM
2D
TO
ID
SYSTEMS
-----
7
2.2.3
FROM
ID
TO
OD
SYSTEMS
-----
8
2.3
ELECTRONS
IN
SOLIDS
-
BRAVAIS
LATTICE,
WIGNER-SEITZ
CELL,
BRILLOUIN
ZONE
AND
RELATED
CONCEPTS
-----
9
2.3.1
RECIPROCAL
SPACE
-----
12
2.3.2
THE
BRILLOUIN
ZONE
-----
13
2.4
TIGHT-BINDING
CALCULATION
OF
BAND
STRUCTURES
-----
14
2.4.1
DISCRETE
SCHRODINGER
EQUATION
-----
15
2.4.2
LINEAR
COMBINATION
OF
ATOMIC
ORBITALS
-----
17
2.4.3
PERIODIC
POTENTIALS
-
TIGHT
BINDING
IN
ID
-----20
2.4.4
TIGHT
BINDING
IN
2D
-----
24
2.4.5
OVERLAP
INTEGRALS
-----
26
2.4.6
RECIPE
FOR
GENERAL
TIGHT-BINDING
METHOD
-----29
2.5
EFFECTIVE
MASS
APPROXIMATION
------32
2.5.1
EFFECTIVE
MASS
TENSOR
-----34
2.5.2
ENERGY-DEPENDENT
EFFECTIVE
MASS
-
35
2.6
BULK
MATERIALS
-----36
2.6.1
SILICON
-
CRYSTAL
STRUCTURE
AND
MATERIAL
PROPERTIES
*
36
2.6.2
TIGHT-BINDING
CALCULATION
OF
SILICON
-----39
2.6.3
BAND
STRUCTURE
OF
SILICON
-----
41
2.7
TWO-DIMENSIONAL
MATERIALS
-----43
2.7.1
MONOLAYER
GRAPHENE
-----
43
2.7.2
BILAYER
GRAPHENE
-----
46
2.7.3
TRANSITION
METAL
DICHALCOGENIDES
-----
49
2.7.4
OTHER
TWO-DIMENSIONAL
MATERIALS
------
52
2.7.5
GRAPHENE
NANORIBBONS
-----
52
2.8
CARBON
NANOTUBES
-----
54
XII
*
*
CONTENTS
2.9
THE
FERMI
DISTRIBUTION
FUNCTION
*
60
2.9.1
THE
FERMI
DISTRIBUTION
FOR
HOLES
*
64
2.9.2
FERMI
DISTRIBUTION
FUNCTION
FOR
DOPANTS
*
64
2.10
CARRIER
DENSITY
*
67
2.10.1
DENSITY
OF
STATES
*
68
2.10.2
DENSITY
OF
STATES
IN
THE
CASE
OF
ANISOTROPIC
EFFECTIVE
MASSES
*
71
2.10.3
FERMI
INTEGRALS
-----
72
2.10.4
DENSITY
OF
STATES
OF
GRAPHENE
*
74
2.10.5
DENSITY
OF
STATES
OF
CARBON
NANOTUBES
*
74
2.11
CURRENT
FLOW
*
76
2.11.1
QUASI-CLASSICAL
APPROACH
-----
76
2.11.2
LANDAUER
FORMALISM
-----
79
2.11.3
MULTIMODE
TRANSPORT
-----83
3
SEMICONDUCTOR
FABRICATION
*
85
3.1
WAFER
CLEANING
*
85
3.1.1
SOLVENTS
*
85
3.1.2
PIRANHA
CLEANING
SOLUTION
*
86
3.1.3
RCA
CLEAN
-----
87
3.2
OXIDATION
OF
SILICON
*
90
3.2.1
THERMAL
OXIDATION
*
91
3.2.2
LOCAL
AND
GEOMETRY-DEPENDENT
OXIDATION
OF
SILICON
*
94
3.2.3
CHEMICAL
OXIDATION
OF
SILICON
*
94
3.3
RAPID
THERMAL
NITRIDATION
*
96
3.4
LITHOGRAPHY
*
97
3.4.1
RESIST
COATING
*
97
3.4.2
OPTICAL
LITHOGRAPHY
*
98
3.4.3
ELECTRON-BEAM
LITHOGRAPHY
*
108
3.4.4
SPACER
PATTERNING
*
114
3.5
WET
CHEMICAL
ETCHING
*
116
3.5.1
ETCHING
OF
OXIDES
*
117
3.5.2
ETCHING
OF
SILICON
NITRIDE
*
118
3.5.3
(DIGITAL-)
ETCHING
OF
SILICON
*
118
3.5.4
ANISOTROPIC
SILICON
ETCHING
*
119
3.6
DRY
ETCHING
-----
122
3.6.1
REACTIVE
ION
ETCHING
*
123
3.6.2
INDUCTIVELY
COUPLED
PLASMA
ETCHING
*
125
3.6.3
TUNING
THE
ANISOTROPY
OF
DRY
ETCHING
*
125
3.6.4
SELECTIVITY
OF
DRY
ETCHING
*
127
3.6.5
PLASMA
ETCHING
-----
128
3.6.6
SEQUENTIAL
ETCH
PROCESS
1
-
ATOMIC
LAYER
ETCHING
*
128
3.6.7
SEQUENTIAL
ETCH
PROCESS
II
-
BOSCH
PROCESS
*
130
CONTENTS
*
XIII
3.6.8
3.6.9
3.7
3.7.1
3.7.2
3.7.3
3.7.4
3.8
3.9
3.10
3.10.1
3.10.2
3.11
3.11.1
3.11.2
3.11.3
3.11.4
ISSUES
OF
DRY
ETCHING
-
MASK
EROSION
AND
OVER-POLYMERIZATION
*
132
ISSUES
OF
DRY
ETCHING
-
ARDE,
MICROLOADING,
TRENCHING,
GRASSING
-----
133
THIN
FILM
DEPOSITION
-----
134
CHEMICAL
VAPOR
DEPOSITION
-
LOW
PRESSURE
CVD
*
135
CHEMICAL
VAPOR
DEPOSITION
-
PLASMA-ENHANCED
CVD
*
137
PHYSICAL
VAPOR
DEPOSITION
-
ELECTRON-BEAM
EVAPORATION
*
139
PHYSICAL
VAPOR
DEPOSITION
-
SPUTTER
DEPOSITION
*
140
DAMASCENE
PROCESS
*
142
ION
IMPLANTATION
AND
ACTIVATION
*
144
SILICIDATION
-----
145
NICKEL
SILICIDATION
-----
147
DOPANT
SEGREGATION
DURING
NICKEL
SILICIDATION
*
148
LOW-DIMENSIONAL
SEMICONDUCTORS
*
150
TOP-DOWN
FABRICATION
OF
NANOWIRES
*
151
GROWTH
OF
NANOWIRES
-----
152
2D
MATERIALS
-
EXFOLIATION
AND
VISIBILITY
ON
SUBSTRATES
*
154
2D
MATERIALS
TRANSFER
-
PVA/PMMA
METHOD
-----
156
4
4.1
4.1.1
4.2
4.3
4.3.1
4.3.2
4.4
4.4.1
4.4.2
4.4.3
4.4.4
4.4.5
4.5
4.5.1
4.5.2
4.5.3
4.5.4
4.6
BASIC
INGREDIENTS
FOR
NANOELECTRONICS
DEVICES
*
160
DOPING
OF
SEMICONDUCTORS
-----
160
DEGENERATE
DOPING
CONCENTRATION
*
163
P-N-JUNCTIONS
-----
165
DOPING
AT
THE
NANOSCALE
*
168
HYDROGEN-MODEL
FOR
ACTIVATION
OF
DOPANTS
*
168
DEACTIVATION
OF
DOPANTS
IN
NANOSCALE
STRUCTURES
*
172
METAL-OXIDE-SEMICONDUCTOR
CAPACITOR
*
174
DEPLETION
CAPACITANCE
*
177
INTERFACE-STATES
CAPACITANCE
*
178
DENSITY-OF-STATES
OR
QUANTUM
CAPACITANCE
*
179
ACCUMULATION
CAPACITANCE
*
184
GATE
DIELECTRICS
WITH
HIGH
DIELECTRIC
CONSTANT
*
185
METAL-SEMICONDUCTOR
CONTACTS
*
187
FERMI
LEVEL
PINNING
-----
188
MS-CONTACTS
TO
HIGHLY
DOPED
SEMICONDUCTORS
-----
192
FERMI
LEVEL
DEPINNING
WITH
ULTRATHIN
INSULATORS
*
193
TRANSFER
LENGTH
OF
CONTACTS
*
194
HETEROSTRUCTURES
*
196
5
5.1
5.2
METAL-OXIDE-SEMICONDUCTOR
FIELD-EFFECT
TRANSISTORS
*
197
OPERATION
PRINCIPLES
-
GRADUAL
CHANNEL
APPROXIMATION
*
197
NANOSCALE
TRANSISTORS
WITH
BALLISTIC
TRANSPORT
-
FROM
ID
TO
2D
TO
BULK
MOSFETS
-----
199
XIV
*
CONTENTS
5.2.1
DEPENDENCE
ON
TERMINAL
VOLTAGES
-
TOP-OF-THE-BARRIER
MODEL
*
203
5.2.2
OFF-STATE
-----
207
5.2.3
ON-STATE
-
OUTPUT
CHARACTERISTICS
*
209
5.2.4
ON-STATE
-
TRANSFER
CHARACTERISTICS
*
211
5.3
IMPACT
OF
SCATTERING
*
212
5.4
OPTIMIZING
THE
PERFORMANCE
OF
MOSFETS
-----
213
5.5
A
SIMPLE
MODEL
FOR
THE
ELECTROSTATICS
*
214
5.6
SCALING
AND
THE
APPEARANCE
OF
SHORT-CHANNEL
EFFECTS
*
218
5.7
ULTRATHIN-BODY
FIELD-EFFECT
TRANSISTORS
-----
220
5.7.1
SINGLE-GATE
ULTRATHIN-BODY
SOI-MOSFETS
------
221
5.7.2
MULTIGATE
NANOWIRE
FETS
-----
223
5.8
ULTIMATE
SCALING
OF
MOSFETS
-----
225
5.8.1
CLASSICAL
AND
QUANTUM
CAPACITANCE
LIMITS
*
225
5.8.2
REDUCING
PARASITIC
CAPACITANCES
WITH
NANOWIRE
BUNDLES
*
227
5.8.3
TUNNELING
THROUGH
THE
GATE
DIELECTRIC
*
229
5.8.4
DIRECT
SOURCE-DRAIN
TUNNELING
*
231
6
DEVICE
SIMULATION
*
234
6.1
POISSON
*
S
EQUATION
IN
ID
DEVICES
*
234
6.1.1
FINITE
DIFFERENCE
DISCRETIZATION
*
234
6.1.2
CONFORMAL
MAPPING
-----
239
6.2
NON-EQUILIBRIUM
GREEN
*
S
FUNCTION
FORMALISM
IN
SINGLE-BAND
ID-FETS
-----
242
6.2.1
THE
GREEN
*
S
FUNCTION
-----
242
6.2.2
DISCRETIZATION
OF
THE
GREEN
*
S
FUNCTION
*
245
6.2.3
INCLUDING
CONTACTS
-----
247
6.2.4
CARRIER
DENSITY
IN
NON-EQUILIBRIUM
*
250
6.2.5
SELF-CONSISTENCY
-----
252
6.2.6
CURRENT
FLOW
-----
254
6.3
EXTENSIONS
OF
THE
ID
NEGF
------
255
6.3.1
SCATTERING
WITH
BUETTIKER
PROBES
-----
255
6.3.2
GATE
LEAKAGE
WITH
BUETTIKER
CONTACTS
*
258
6.3.3
MULTI-MODE
TRANSPORT
WITH
INDEPENDENT
ID
SUBBANDS
*
261
6.3.4
INCLUDING
CONDUCTION
AND
VALENCE
BANDS
-
ENERGY-DEPENDENT
EFFECTIVE
MASS
-----
262
6.3.5
INCLUDING
CONDUCTION
AND
VALENCE
BANDS
-
ID
SIMULATION
WITH
TWO-BAND
TIGHT-BINDING
CALCULATION
*
263
6.4
SIMULATIONS
OF
DEVICES
IN
HIGHER-DIMENSIONS
*
266
6.4.1
POISSON
EQUATION
*
266
6.4.2
NEGF
DEVICES
IN
2D/3D
-----
268
7
METAL-SOURCE-DRAIN
FIELD-EFFECT
TRANSISTORS
*
270
CONTENTS
*
*
XV
7.1
7.1.1
7.1.2
7.2
OPERATING
PRINCIPLES
OF
SB-MOSFETS
-----
272
ULTRATHIN-BODY
SB-MOSFETS
-----
276
OUTPUT
CHARACTERISTICS
*
286
SCHOTTKY-BARRIER
LOWERING
WITH
DOPANT
SEGREGATION
DURING
SILICIDATION
-----
289
7.2.1
7.2.2
7.3
7.3.1
7.3.2
7.4
MEASUREMENTS
AND
DISCUSSION
*
292
TEMPERATURE-DEPENDENT
MEASUREMENTS
*
292
INTERFACE
ENGINEERING
WITH
DEPINNING
LAYERS
*
295
METAL
SOURCE/DRAIN
DEVICE
USING
INTERFACE
ENGINEERING
*
295
HORIZONTAL
METAL-INSULATOR
CONTACTS
*
297
RECONFIGURABLE
DEVICES
*
298
8
8.1
8.1.1
8.1.2
8.1.3
8.1.4
8.2
CARBON
NANOTUBE
FIELD-EFFECT
TRANSISTORS
*
303
CARBON
NANOTUBE
FETS
AS
SB-MOSFETS
-----
303
IMPACT
OF
THE
DEVICE
GEOMETRY
*
303
MULTI-MODE
TRANSPORT
IN
CNTFETS
-----
305
CONTACT
FORMATION
TO
CNTS
-----
311
RECONFIGURABLE
CONTACTS
*
317
CONVENTIONAL
CNTFET
DEVICES
*
320
9
9.1
9.1.1
9.1.2
9.1.3
9.2
9.2.1
9.2.2
9.2.3
9.2.4
STEEP
SLOPE
TRANSISTORS
*
322
BAND-TO-BAND
TUNNEL
FIELD-EFFECT
TRANSISTORS
*
323
OPERATING
PRINCIPLES
OF
TFETS
-
OFF-STATE
-----
324
OPERATING
PRINCIPLES
OF
TFETS
-
ON-STATE
*
331
TFET
OPTIMIZATION
*
337
ALTERNATIVE
STEEP-SLOPE
TRANSISTOR
CONCEPTS
*
346
TFETS
WITH
LINE-TUNNELING
-----
347
ENERGY-FILTERING
DEVICES
*
349
IMPACT
IONIZATION
FIELD-EFFECT
TRANSISTORS
*
351
FIELD-EFFECT
CONTROLLED
MODULATION
OF
THE
BAND
GAP
*
354
10
10.1
10.1.1
10.1.2
10.1.3
10.2
10.2.1
10.3
DEVICE
BASED
ON
TWO-DIMENSIONAL
MATERIALS
*
357
GRAPHENE
FETS
-----
357
GRAPHENE
FETS
-
CONTACTS
*
359
GRAPHENE
NANORIBBON
FETS
-----
363
BILAYER
GRAPHENE
-----
365
TRANSITION
METAL
DICHALCOGENIDES
*
366
RECONFIGURABLE
TMDC-FETS
WITH
TRIPLE-GATE
STRUCTURES
-----
368
VAN
DERWAALS
HETEROSTRUCTURES
*
371
A
COLOR
MAP
FOR
2D
MATERIALS
*
375
XVI
*
CONTENTS
BIBLIOGRAPHY
*
377
INDEX
*
389 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Knoch, Joachim 1972- |
| author_GND | (DE-588)12335059X |
| author_facet | Knoch, Joachim 1972- |
| author_role | aut |
| author_sort | Knoch, Joachim 1972- |
| author_variant | j k jk |
| building | Verbundindex |
| bvnumber | BV047066866 |
| classification_rvk | ZN 4900 ZN 3700 UK 8300 |
| ctrlnum | (OCoLC)1232457883 (DE-599)DNB1182480209 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV047066866 |
| illustrated | Illustrated |
| index_date | 2024-07-03T16:12:52Z |
| indexdate | 2024-08-05T08:31:19Z |
| institution | BVB |
| institution_GND | (DE-588)10095502-2 |
| isbn | 9783110574210 3110574217 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032473948 |
| oclc_num | 1232457883 |
| open_access_boolean | |
| owner | DE-706 DE-92 DE-11 DE-573 DE-1102 DE-83 DE-634 DE-703 DE-898 DE-BY-UBR DE-862 DE-BY-FWS DE-20 DE-1050 |
| owner_facet | DE-706 DE-92 DE-11 DE-573 DE-1102 DE-83 DE-634 DE-703 DE-898 DE-BY-UBR DE-862 DE-BY-FWS DE-20 DE-1050 |
| physical | XVI, 390 Seiten Illustrationen, Diagramme 24 cm x 17 cm, 684 g |
| publishDate | 2021 |
| publishDateSearch | 2021 |
| publishDateSort | 2021 |
| publisher | De Gruyter |
| record_format | marc |
| series2 | De Gruyter graduate |
| spellingShingle | Knoch, Joachim 1972- Nanoelectronics device physics, fabrication, simulation Quantenphysik (DE-588)4266670-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4266670-3 (DE-588)4150649-2 (DE-588)4158814-9 (DE-588)4131472-4 (DE-588)4732034-5 (DE-588)4016921-2 (DE-588)4207266-9 |
| title | Nanoelectronics device physics, fabrication, simulation |
| title_auth | Nanoelectronics device physics, fabrication, simulation |
| title_exact_search | Nanoelectronics device physics, fabrication, simulation |
| title_exact_search_txtP | Nanoelectronics device physics, fabrication, simulation |
| title_full | Nanoelectronics device physics, fabrication, simulation Joachim Knoch |
| title_fullStr | Nanoelectronics device physics, fabrication, simulation Joachim Knoch |
| title_full_unstemmed | Nanoelectronics device physics, fabrication, simulation Joachim Knoch |
| title_short | Nanoelectronics |
| title_sort | nanoelectronics device physics fabrication simulation |
| title_sub | device physics, fabrication, simulation |
| topic | Quantenphysik (DE-588)4266670-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Quantenphysik Drei-Fünf-Halbleiter Halbleitertechnologie Feldeffekttransistor Nanoelektronik Festkörperphysik MOS-FET |
| url | http://www.degruyter.com/search?f_0=isbnissn&q_0=9783110574210&searchTitles=true http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032473948&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT knochjoachim nanoelectronicsdevicephysicsfabricationsimulation AT walterdegruytergmbhcokg nanoelectronicsdevicephysicsfabricationsimulation |
Inhaltsverzeichnis
THWS Schweinfurt Zentralbibliothek Lesesaal
| Signatur: |
2000 ZN 3700 K72 |
|---|---|
| Exemplar 1 | ausleihbar Verfügbar Bestellen |