On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Berlin
Universitätsverlag der TU Berlin
2020
|
Schriftenreihe: | Elektrische Energietechnik an der TU Berlin
Band 8 |
Schlagworte: | |
Online-Zugang: | kostenfrei Inhaltstext Inhaltstext Inhaltsverzeichnis Inhaltsverzeichnis |
Beschreibung: | xvii, 158 Seiten Illustrationen, Diagramme 21 cm x 14.8 cm, 380 g |
ISBN: | 9783798330962 3798330964 |
DOI: | 10.14279/depositonce-8556 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV047041462 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 201203s2020 gw a||| m||| 00||| eng d | ||
015 | |a 20,N34 |2 dnb | ||
015 | |a 20,B45 |2 dnb | ||
015 | |a 20,H11 |2 dnb | ||
016 | 7 | |a 1215773862 |2 DE-101 | |
020 | |a 9783798330962 |c Broschur : EUR 13.00 (DE), EUR 13.40 (AT) |9 978-3-7983-3096-2 | ||
020 | |a 3798330964 |9 3-7983-3096-4 | ||
024 | 3 | |a 9783798330962 | |
035 | |a (OCoLC)1225888198 | ||
035 | |a (DE-599)DNB1215773862 | ||
040 | |a DE-604 |b ger |e rda | ||
041 | 0 | |a eng | |
044 | |a gw |c XA-DE-BE | ||
049 | |a DE-83 | ||
084 | |a ZN 8340 |0 (DE-625)157614: |2 rvk | ||
084 | |8 1\p |a 621.3 |2 sdnb | ||
100 | 1 | |a Eial Awwad, Abdullah |e Verfasser |0 (DE-588)1190322072 |4 aut | |
245 | 1 | 0 | |a On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters |c Abdullah Eial Awwad |
264 | 1 | |a Berlin |b Universitätsverlag der TU Berlin |c 2020 | |
300 | |a xvii, 158 Seiten |b Illustrationen, Diagramme |c 21 cm x 14.8 cm, 380 g | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Elektrische Energietechnik an der TU Berlin |v Band 8 | |
502 | |b Dissertation |c Technische Universität Berlin |d 2018 | ||
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Leistungshalbleiter |0 (DE-588)4167286-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Gleichspannungswandler |0 (DE-588)4308858-2 |2 gnd |9 rswk-swf |
653 | |a SiC MOSFET | ||
653 | |a high frequency transformer | ||
653 | |a SiC MOSFET parallel operation | ||
653 | |a unidirectional DC DC converter | ||
653 | |a dual active bridge | ||
653 | |a Hochfrequenz-Transformator | ||
653 | |a SiC-MOSFET-Parallelbetrieb | ||
653 | |a unidirektionaler DC-DC-Konverter | ||
653 | |a Dual-Aktiv-Brücken | ||
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a Gleichspannungswandler |0 (DE-588)4308858-2 |D s |
689 | 0 | 1 | |a Leistungshalbleiter |0 (DE-588)4167286-0 |D s |
689 | 0 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | |5 DE-604 | |
710 | 2 | |a Technische Universität Berlin |b Universitätsbibliothek |0 (DE-588)5053182-7 |4 pbl | |
776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |o 10.14279/depositonce-8556 |z 978-3-7983-3097-9 |w (DE-604)BV047041521 |
830 | 0 | |a Elektrische Energietechnik an der TU Berlin |v Band 8 |w (DE-604)BV044435745 |9 8 | |
856 | 4 | 1 | |u https://doi.org/10.14279/depositonce-8556 |x Resolving-System |z kostenfrei |3 Volltext |
856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=2&dok_ext=htm |3 Inhaltstext |
856 | 4 | 2 | |m B:DE-101 |q application/pdf |u https://d-nb.info/1215773862/04 |3 Inhaltsverzeichnis |
856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032448537&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
912 | |a ebook | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-032448537 | ||
883 | 2 | |8 1\p |a dnb |d 20201030 |q DE-101 |u https://d-nb.info/provenance/plan#dnb |
Datensatz im Suchindex
_version_ | 1804182020913364992 |
---|---|
adam_text | TABLE
OF
CONTENTS
NOMENCLATURE
X
1
INTRODUCTION
1
1.1
SIC
MOSFETS
.................................................................................................................
2
1.2
RESEARCH
MOTIVATION
.......................................................................................................
2
1.3
MAIN
OBJECTIVES
AND
CONTRIBUTIONS
.................................................................................
3
1.4
DISSERTATION
OUTLINE
..........................................................................................................
5
2
STATIC
CHARACTERISTICS
7
2.1
INTRODUCTION
.......................................................................................................................
7
2.2
DEVICES
UNDER
TEST
..........................................................................................................
7
2.3
FIRST
QUADRANT
STATIC
CHARACTERISTICS
..............................................................................
9
2.4
STATIC
INTERNAL-DIODE
CHARACTERISTICS
..............................................................................
12
2.4.1
STATIC
THIRD-QUADRANT
CHARACTERISTICS
...............................................................
14
3
DYNAMIC
CHARACTERISATION
17
3.1
INTRODUCTION
.......................................................................................................................
17
3.2
VOLTAGE
AND
CURRENT
MEASUREMENT
REQUIREMENT
............................................................
17
3.3
DRIVING
REQUIREMENTS
OF
SIC
POWER
MOSFETS
............................................................
19
3.3.1
GATE-SOURCE
VOLTAGE
LEVEL
.................................................................................
19
3.3.2
DI/DT
AND
DV/DT
IMMUNITY
.....................................................................................
21
3.3.3
OPTIMAL
EXTERNAL
GATE
RESISTANCE
SELECTION
.....................................................
21
3.4
SWITCHING
CHARACTERISTICS
OF
SIC
MOSFETS
..................................................................
25
3.5
REVERSE
RECOVERY
CHARACTERISTIC
OF
SIC
MOSFET
INTERNAL-DIODE
................................
28
TABLE
OF
CONTENTS
VII
4
ANALYTICAL
SWITCHING
LOSS
MODEL
FOR
SIC
MOSFETS
34
4.1
INTRODUCTION
......................................................................................................................
34
4.2
DEVELOPMENT
OF
CIRCUIT
MODEL
.......................................................................................
35
4.3
ANALYSIS
OF
TURN-ON
SWITCHING
PROCESS
..........................................................................
36
4.4
ANALYSIS
OF
TURN-OFF
SWITCHING
PROCESS
.......................................................................
39
4.5
DISPLACEMENT
CURRENT
PHENOMENON
DURING TURN-OFF
PROCESS
.....................................
43
4.6
SWITCHING
TIME
AND
SWITCHING
LOSS
CALCULATIONS
........................................................
47
4.7
VALIDATION
AND DISCUSSION
OF
THE
PROPOSED
MODEL
........................................................
50
5
SWITCHING-FREQUENCY
AND
THERMAL
LIMITATION
54
5.1
INTRODUCTION
......................................................................................................................
54
5.2
ELECTRO-THERMAL
MODEL
...................................................................................................
55
5.2.1
ELECTRICAL
MODEL
................................................................................................
55
5.2.2
THERMAL
MODEL
...................................................................................................
56
5.3
OPERATION
OF
SIC
MOSFETS
AT
1
MHZ
FOR
HARD-
AND
SOFT-SWITCHING
CONVERTERS
...
59
5.3.1
HARD
SWITCHING
...................................................................................................
59
5.3.2
SOFT
SWITCHING
...................................................................................................
60
5.4
OPERATION
OF
SIC
MOSFETS
IN
A
10
KW
DC/DC
CONVERTER
........................................
62
5.4.1
POWER
LOSS
MEASUREMENT
.................................................................................
63
5.4.2
EXPERIMENTAL
RESULTS
OF
SINGLE
CHIP
OPERATION
...............................................
63
5.4.3
10
KW
DC/DC
CONVERTER
OPERATION
.................................................................
64
6
SHORT-CIRCUIT
ROBUSTNESS
OF
SIC
MOSFETS
72
6.1
INTRODUCTION
......................................................................................................................
72
6.2
SHORT-CIRCUIT
BEHAVIOUR
OF
SIC
POWER
MOSFETS
........................................................
73
6.3
FAILURE ANALYSIS
DURING
MODE-3
....................................................................................
77
6.3.1
THERMAL
RUNAWAY
OF
PLANAR
SIC
DEVICES
........................................................
79
6.3.2
THERMAL
RUNAWAY
OF
DOUBLE-TRENCH
SIC
DEVICES
............................................
81
6.4
SHORT
CIRCUIT
OVERCURRENT
PROTECTION
..............................................................................
84
6.4.1
OCP-
EXPERIMENTAL
AND
SIMULATION
RESULTS
.......................................................
85
VIII
TABLE
OF
CONTENTS
7
EFFICIENCY
ANALYSIS
OF
HF
PS-ZVZCS
ISOLATED
UNIDIRECTIONAL
FULL-BRIDGE
DC/DC
CON
VERTER
88
7.1
INTRODUCTION
.......................................................................................................................
88
7.2
PS-ZVS
ISOLATED
UNIDIRECTIONAL
FULL-BRIDGE
DC/DC
CONVERTER
...................................
89
7.2.1
OPERATION
PRINCIPLE
OF
PS-FB
DC-DC
CONVERTER
............................................
89
7.3
POWER
LOSS
PREDICTION
....................................................................................................
92
7.3.1
ANALYTICAL
CALCULATION
OF
SWITCHING
AND
CONDUCTION
LOSSES
.............................92
7.4
HIGH-FREQUENCY
TRANSFORMER
........................................................................................
94
7.4.1
OPTIMAL
SELECTION
OF
FLUX
DENSITY
.....................................................................
94
7.5
POWER
LOSS
MEASUREMENT
.....................................................................................................
96
7.6
EXPERIMENTAL
RESULTS
AND
DISCUSSION
..............................................................................
96
7.7
HFT
IMPACT
ON
TOTAL
CONVERTER
EFFICIENCY
....................................................................
100
7.7.1
EXPERIMENTAL
RESULTS
.............................................................................................
102
8
SIC-BASED DUAL
ACTIVE
BRIDGE
FOR
HIGH-EFFICIENCY DC/DC
CONVERTER
104
8.1
INTRODUCTION
..........................................................................................................................
104
8.2
SINGLE
PHASE-SHIFT
MODULATION
..........................................................................................
105
8.2.1
ZVS
CONDITIONS
WITH
SPS
MODULATION
.................................................................
109
8.2.2
CURRENT
STRESS
AND
CIRCULATION
CURRENT
.................................................................
110
8.2.3
POWER
LOSS
PREDICTION
..........................................................................................
ILL
8.3
MODIFIED DUAL
PHASE-SHIFT
(MDPS)
CONTROL
....................................................................
112
8.4
CLOSED-LOOP
CONTROL
..........................................................................................................
118
8.5
SOFT-STARTING
PROCEDURE
.......................................................................................................
119
8.6
EXPERIMENTAL
RESULTS
..........................................................................................................
120
9
CONCLUSIONS
AND
FUTURE
WORK
127
9.1
CONCLUSION
..........................................................................................................................
127
9.2
FUTURE
WORK
..........................................................................................................................
129
REFERENCES
130
LIST
OF
FIGURES
141
TABLE
OF
CONTENTS
IX
LIST
OF
TABLES
147
APPENDIX
A
STATIC
CHARACTERISTICS MEASUREMENT
SETUP
149
APPENDIX
B
ANALYTICAL SWITCHING
LOSS
MODEL
151
APPENDIX
C
THERMAL PERFORMANCE
OF
HFT
PROTOTYPES
156
|
adam_txt |
TABLE
OF
CONTENTS
NOMENCLATURE
X
1
INTRODUCTION
1
1.1
SIC
MOSFETS
.
2
1.2
RESEARCH
MOTIVATION
.
2
1.3
MAIN
OBJECTIVES
AND
CONTRIBUTIONS
.
3
1.4
DISSERTATION
OUTLINE
.
5
2
STATIC
CHARACTERISTICS
7
2.1
INTRODUCTION
.
7
2.2
DEVICES
UNDER
TEST
.
7
2.3
FIRST
QUADRANT
STATIC
CHARACTERISTICS
.
9
2.4
STATIC
INTERNAL-DIODE
CHARACTERISTICS
.
12
2.4.1
STATIC
THIRD-QUADRANT
CHARACTERISTICS
.
14
3
DYNAMIC
CHARACTERISATION
17
3.1
INTRODUCTION
.
17
3.2
VOLTAGE
AND
CURRENT
MEASUREMENT
REQUIREMENT
.
17
3.3
DRIVING
REQUIREMENTS
OF
SIC
POWER
MOSFETS
.
19
3.3.1
GATE-SOURCE
VOLTAGE
LEVEL
.
19
3.3.2
DI/DT
AND
DV/DT
IMMUNITY
.
21
3.3.3
OPTIMAL
EXTERNAL
GATE
RESISTANCE
SELECTION
.
21
3.4
SWITCHING
CHARACTERISTICS
OF
SIC
MOSFETS
.
25
3.5
REVERSE
RECOVERY
CHARACTERISTIC
OF
SIC
MOSFET
INTERNAL-DIODE
.
28
TABLE
OF
CONTENTS
VII
4
ANALYTICAL
SWITCHING
LOSS
MODEL
FOR
SIC
MOSFETS
34
4.1
INTRODUCTION
.
34
4.2
DEVELOPMENT
OF
CIRCUIT
MODEL
.
35
4.3
ANALYSIS
OF
TURN-ON
SWITCHING
PROCESS
.
36
4.4
ANALYSIS
OF
TURN-OFF
SWITCHING
PROCESS
.
39
4.5
DISPLACEMENT
CURRENT
PHENOMENON
DURING TURN-OFF
PROCESS
.
43
4.6
SWITCHING
TIME
AND
SWITCHING
LOSS
CALCULATIONS
.
47
4.7
VALIDATION
AND DISCUSSION
OF
THE
PROPOSED
MODEL
.
50
5
SWITCHING-FREQUENCY
AND
THERMAL
LIMITATION
54
5.1
INTRODUCTION
.
54
5.2
ELECTRO-THERMAL
MODEL
.
55
5.2.1
ELECTRICAL
MODEL
.
55
5.2.2
THERMAL
MODEL
.
56
5.3
OPERATION
OF
SIC
MOSFETS
AT
1
MHZ
FOR
HARD-
AND
SOFT-SWITCHING
CONVERTERS
.
59
5.3.1
HARD
SWITCHING
.
59
5.3.2
SOFT
SWITCHING
.
60
5.4
OPERATION
OF
SIC
MOSFETS
IN
A
10
KW
DC/DC
CONVERTER
.
62
5.4.1
POWER
LOSS
MEASUREMENT
.
63
5.4.2
EXPERIMENTAL
RESULTS
OF
SINGLE
CHIP
OPERATION
.
63
5.4.3
10
KW
DC/DC
CONVERTER
OPERATION
.
64
6
SHORT-CIRCUIT
ROBUSTNESS
OF
SIC
MOSFETS
72
6.1
INTRODUCTION
.
72
6.2
SHORT-CIRCUIT
BEHAVIOUR
OF
SIC
POWER
MOSFETS
.
73
6.3
FAILURE ANALYSIS
DURING
MODE-3
.
77
6.3.1
THERMAL
RUNAWAY
OF
PLANAR
SIC
DEVICES
.
79
6.3.2
THERMAL
RUNAWAY
OF
DOUBLE-TRENCH
SIC
DEVICES
.
81
6.4
SHORT
CIRCUIT
OVERCURRENT
PROTECTION
.
84
6.4.1
OCP-
EXPERIMENTAL
AND
SIMULATION
RESULTS
.
85
VIII
TABLE
OF
CONTENTS
7
EFFICIENCY
ANALYSIS
OF
HF
PS-ZVZCS
ISOLATED
UNIDIRECTIONAL
FULL-BRIDGE
DC/DC
CON
VERTER
88
7.1
INTRODUCTION
.
88
7.2
PS-ZVS
ISOLATED
UNIDIRECTIONAL
FULL-BRIDGE
DC/DC
CONVERTER
.
89
7.2.1
OPERATION
PRINCIPLE
OF
PS-FB
DC-DC
CONVERTER
.
89
7.3
POWER
LOSS
PREDICTION
.
92
7.3.1
ANALYTICAL
CALCULATION
OF
SWITCHING
AND
CONDUCTION
LOSSES
.92
7.4
HIGH-FREQUENCY
TRANSFORMER
.
94
7.4.1
OPTIMAL
SELECTION
OF
FLUX
DENSITY
.
94
7.5
POWER
LOSS
MEASUREMENT
.
96
7.6
EXPERIMENTAL
RESULTS
AND
DISCUSSION
.
96
7.7
HFT
IMPACT
ON
TOTAL
CONVERTER
EFFICIENCY
.
100
7.7.1
EXPERIMENTAL
RESULTS
.
102
8
SIC-BASED DUAL
ACTIVE
BRIDGE
FOR
HIGH-EFFICIENCY DC/DC
CONVERTER
104
8.1
INTRODUCTION
.
104
8.2
SINGLE
PHASE-SHIFT
MODULATION
.
105
8.2.1
ZVS
CONDITIONS
WITH
SPS
MODULATION
.
109
8.2.2
CURRENT
STRESS
AND
CIRCULATION
CURRENT
.
110
8.2.3
POWER
LOSS
PREDICTION
.
ILL
8.3
MODIFIED DUAL
PHASE-SHIFT
(MDPS)
CONTROL
.
112
8.4
CLOSED-LOOP
CONTROL
.
118
8.5
SOFT-STARTING
PROCEDURE
.
119
8.6
EXPERIMENTAL
RESULTS
.
120
9
CONCLUSIONS
AND
FUTURE
WORK
127
9.1
CONCLUSION
.
127
9.2
FUTURE
WORK
.
129
REFERENCES
130
LIST
OF
FIGURES
141
TABLE
OF
CONTENTS
IX
LIST
OF
TABLES
147
APPENDIX
A
STATIC
CHARACTERISTICS MEASUREMENT
SETUP
149
APPENDIX
B
ANALYTICAL SWITCHING
LOSS
MODEL
151
APPENDIX
C
THERMAL PERFORMANCE
OF
HFT
PROTOTYPES
156 |
any_adam_object | 1 |
any_adam_object_boolean | 1 |
author | Eial Awwad, Abdullah |
author_GND | (DE-588)1190322072 |
author_facet | Eial Awwad, Abdullah |
author_role | aut |
author_sort | Eial Awwad, Abdullah |
author_variant | a a e aa aae |
building | Verbundindex |
bvnumber | BV047041462 |
classification_rvk | ZN 8340 |
collection | ebook |
ctrlnum | (OCoLC)1225888198 (DE-599)DNB1215773862 |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.14279/depositonce-8556 |
format | Thesis Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03305nam a2200709 cb4500</leader><controlfield tag="001">BV047041462</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">201203s2020 gw a||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">20,N34</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">20,B45</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">20,H11</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1215773862</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783798330962</subfield><subfield code="c">Broschur : EUR 13.00 (DE), EUR 13.40 (AT)</subfield><subfield code="9">978-3-7983-3096-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3798330964</subfield><subfield code="9">3-7983-3096-4</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783798330962</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1225888198</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1215773862</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 8340</subfield><subfield code="0">(DE-625)157614:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="8">1\p</subfield><subfield code="a">621.3</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Eial Awwad, Abdullah</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1190322072</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters</subfield><subfield code="c">Abdullah Eial Awwad</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="b">Universitätsverlag der TU Berlin</subfield><subfield code="c">2020</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xvii, 158 Seiten</subfield><subfield code="b">Illustrationen, Diagramme</subfield><subfield code="c">21 cm x 14.8 cm, 380 g</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Elektrische Energietechnik an der TU Berlin</subfield><subfield code="v">Band 8</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Technische Universität Berlin</subfield><subfield code="d">2018</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Leistungshalbleiter</subfield><subfield code="0">(DE-588)4167286-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gleichspannungswandler</subfield><subfield code="0">(DE-588)4308858-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">SiC MOSFET</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">high frequency transformer</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">SiC MOSFET parallel operation</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">unidirectional DC DC converter</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">dual active bridge</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Hochfrequenz-Transformator</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">SiC-MOSFET-Parallelbetrieb</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">unidirektionaler DC-DC-Konverter</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Dual-Aktiv-Brücken</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Gleichspannungswandler</subfield><subfield code="0">(DE-588)4308858-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Leistungshalbleiter</subfield><subfield code="0">(DE-588)4167286-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Technische Universität Berlin</subfield><subfield code="b">Universitätsbibliothek</subfield><subfield code="0">(DE-588)5053182-7</subfield><subfield code="4">pbl</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="o">10.14279/depositonce-8556</subfield><subfield code="z">978-3-7983-3097-9</subfield><subfield code="w">(DE-604)BV047041521</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Elektrische Energietechnik an der TU Berlin</subfield><subfield code="v">Band 8</subfield><subfield code="w">(DE-604)BV044435745</subfield><subfield code="9">8</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.14279/depositonce-8556</subfield><subfield code="x">Resolving-System</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=2&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">B:DE-101</subfield><subfield code="q">application/pdf</subfield><subfield code="u">https://d-nb.info/1215773862/04</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032448537&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ebook</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032448537</subfield></datafield><datafield tag="883" ind1="2" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">dnb</subfield><subfield code="d">20201030</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#dnb</subfield></datafield></record></collection> |
genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV047041462 |
illustrated | Illustrated |
index_date | 2024-07-03T16:05:42Z |
indexdate | 2024-07-10T09:00:55Z |
institution | BVB |
institution_GND | (DE-588)5053182-7 |
isbn | 9783798330962 3798330964 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032448537 |
oclc_num | 1225888198 |
open_access_boolean | 1 |
owner | DE-83 |
owner_facet | DE-83 |
physical | xvii, 158 Seiten Illustrationen, Diagramme 21 cm x 14.8 cm, 380 g |
psigel | ebook |
publishDate | 2020 |
publishDateSearch | 2020 |
publishDateSort | 2020 |
publisher | Universitätsverlag der TU Berlin |
record_format | marc |
series | Elektrische Energietechnik an der TU Berlin |
series2 | Elektrische Energietechnik an der TU Berlin |
spelling | Eial Awwad, Abdullah Verfasser (DE-588)1190322072 aut On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters Abdullah Eial Awwad Berlin Universitätsverlag der TU Berlin 2020 xvii, 158 Seiten Illustrationen, Diagramme 21 cm x 14.8 cm, 380 g txt rdacontent n rdamedia nc rdacarrier Elektrische Energietechnik an der TU Berlin Band 8 Dissertation Technische Universität Berlin 2018 MOS-FET (DE-588)4207266-9 gnd rswk-swf Leistungshalbleiter (DE-588)4167286-0 gnd rswk-swf Gleichspannungswandler (DE-588)4308858-2 gnd rswk-swf SiC MOSFET high frequency transformer SiC MOSFET parallel operation unidirectional DC DC converter dual active bridge Hochfrequenz-Transformator SiC-MOSFET-Parallelbetrieb unidirektionaler DC-DC-Konverter Dual-Aktiv-Brücken (DE-588)4113937-9 Hochschulschrift gnd-content Gleichspannungswandler (DE-588)4308858-2 s Leistungshalbleiter (DE-588)4167286-0 s MOS-FET (DE-588)4207266-9 s DE-604 Technische Universität Berlin Universitätsbibliothek (DE-588)5053182-7 pbl Erscheint auch als Online-Ausgabe 10.14279/depositonce-8556 978-3-7983-3097-9 (DE-604)BV047041521 Elektrische Energietechnik an der TU Berlin Band 8 (DE-604)BV044435745 8 https://doi.org/10.14279/depositonce-8556 Resolving-System kostenfrei Volltext X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=1&dok_ext=htm Inhaltstext X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=2&dok_ext=htm Inhaltstext B:DE-101 application/pdf https://d-nb.info/1215773862/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032448537&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p dnb 20201030 DE-101 https://d-nb.info/provenance/plan#dnb |
spellingShingle | Eial Awwad, Abdullah On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters Elektrische Energietechnik an der TU Berlin MOS-FET (DE-588)4207266-9 gnd Leistungshalbleiter (DE-588)4167286-0 gnd Gleichspannungswandler (DE-588)4308858-2 gnd |
subject_GND | (DE-588)4207266-9 (DE-588)4167286-0 (DE-588)4308858-2 (DE-588)4113937-9 |
title | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters |
title_auth | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters |
title_exact_search | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters |
title_exact_search_txtP | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters |
title_full | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters Abdullah Eial Awwad |
title_fullStr | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters Abdullah Eial Awwad |
title_full_unstemmed | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters Abdullah Eial Awwad |
title_short | On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters |
title_sort | on the perspectives of sic mosfets in high frequency and high power isolated dc dc converters |
topic | MOS-FET (DE-588)4207266-9 gnd Leistungshalbleiter (DE-588)4167286-0 gnd Gleichspannungswandler (DE-588)4308858-2 gnd |
topic_facet | MOS-FET Leistungshalbleiter Gleichspannungswandler Hochschulschrift |
url | https://doi.org/10.14279/depositonce-8556 http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=1&dok_ext=htm http://deposit.dnb.de/cgi-bin/dokserv?id=07a8f0e46ffb46a3a32da522a7280798&prov=M&dok_var=2&dok_ext=htm https://d-nb.info/1215773862/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032448537&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV044435745 |
work_keys_str_mv | AT eialawwadabdullah ontheperspectivesofsicmosfetsinhighfrequencyandhighpowerisolateddcdcconverters AT technischeuniversitatberlinuniversitatsbibliothek ontheperspectivesofsicmosfetsinhighfrequencyandhighpowerisolateddcdcconverters |