Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE:
Gespeichert in:
1. Verfasser: | |
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Format: | Abschlussarbeit Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Berlin
2020
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Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | 1 Online-Ressource (126, XXI Seiten) Illustrationen, Diagramme |
DOI: | 10.14279/depositonce-10449 |
Internformat
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Datensatz im Suchindex
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spelling | Kuhn, Christian Verfasser (DE-588)1216906238 aut Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE vorgelegt von Master of Science in Physics Christian Kuhn Berlin 2020 1 Online-Ressource (126, XXI Seiten) Illustrationen, Diagramme txt rdacontent c rdamedia cr rdacarrier Dissertation Technische Universität Berlin 2020 MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Borgruppennitride (DE-588)4590273-2 gnd rswk-swf Tunnelkontakt (DE-588)4297371-5 gnd rswk-swf Ultraviolett C (DE-588)4786417-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Lumineszenzdiode (DE-588)4125154-4 s Borgruppennitride (DE-588)4590273-2 s Ultraviolett C (DE-588)4786417-5 s Tunnelkontakt (DE-588)4297371-5 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 Erscheint auch als Druck-Ausgabe (DE-604)BV046879082 https://doi.org/10.14279/depositonce-10449 Resolving-System kostenfrei Volltext |
spellingShingle | Kuhn, Christian Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE MOCVD-Verfahren (DE-588)4314628-4 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Borgruppennitride (DE-588)4590273-2 gnd Tunnelkontakt (DE-588)4297371-5 gnd Ultraviolett C (DE-588)4786417-5 gnd |
subject_GND | (DE-588)4314628-4 (DE-588)4125154-4 (DE-588)4590273-2 (DE-588)4297371-5 (DE-588)4786417-5 (DE-588)4113937-9 |
title | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE |
title_auth | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE |
title_exact_search | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE |
title_exact_search_txtP | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE |
title_full | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE vorgelegt von Master of Science in Physics Christian Kuhn |
title_fullStr | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE vorgelegt von Master of Science in Physics Christian Kuhn |
title_full_unstemmed | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE vorgelegt von Master of Science in Physics Christian Kuhn |
title_short | Group III-nitride based UVC LEDs and lasers with transparent AlGaN:Mg layers and tunnel junctions grown by MOVPE |
title_sort | group iii nitride based uvc leds and lasers with transparent algan mg layers and tunnel junctions grown by movpe |
topic | MOCVD-Verfahren (DE-588)4314628-4 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Borgruppennitride (DE-588)4590273-2 gnd Tunnelkontakt (DE-588)4297371-5 gnd Ultraviolett C (DE-588)4786417-5 gnd |
topic_facet | MOCVD-Verfahren Lumineszenzdiode Borgruppennitride Tunnelkontakt Ultraviolett C Hochschulschrift |
url | https://doi.org/10.14279/depositonce-10449 |
work_keys_str_mv | AT kuhnchristian groupiiinitridebaseduvcledsandlaserswithtransparentalganmglayersandtunneljunctionsgrownbymovpe |