Two-dimensional semiconductors: synthesis, physical properties and applications
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
[2020]
|
| Schlagworte: | |
| Online-Zugang: | http://www.wiley-vch.de/publish/dt/books/ISBN978-3-527-34496-3/ Inhaltsverzeichnis |
| Beschreibung: | xv, 175 Seiten Illustrationen, Diagramme |
| ISBN: | 9783527344963 3527344969 |
Internformat
MARC
| LEADER | 00000nam a22000008c 4500 | ||
|---|---|---|---|
| 001 | BV046805072 | ||
| 003 | DE-604 | ||
| 005 | 20210916 | ||
| 007 | t | ||
| 008 | 200713s2020 gw a||| |||| 00||| eng d | ||
| 015 | |a 19,N47 |2 dnb | ||
| 020 | |a 9783527344963 |c : circa EUR 159.00 (DE) (freier Preis) |9 978-3-527-34496-3 | ||
| 020 | |a 3527344969 |9 3-527-34496-9 | ||
| 024 | 3 | |a 9783527344963 | |
| 028 | 5 | 2 | |a Bestellnummer: 1134496 000 |
| 035 | |a (OCoLC)1159681478 | ||
| 035 | |a (DE-599)DNB1199635510 | ||
| 040 | |a DE-604 |b ger |e rda | ||
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| 084 | |a ZN 3460 |0 (DE-625)157317: |2 rvk | ||
| 084 | |a 540 |2 sdnb | ||
| 100 | 1 | |a Li, Jingbo |e Verfasser |0 (DE-588)1212220870 |4 aut | |
| 245 | 1 | 0 | |a Two-dimensional semiconductors |b synthesis, physical properties and applications |c Jingbo Li, Zhongming Wei, Jun Kang |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c [2020] | |
| 300 | |a xv, 175 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Elektronisches Gerät |0 (DE-588)4127635-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterwerkstoff |0 (DE-588)4158817-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Zweidimensionales Material |0 (DE-588)1216131074 |2 gnd |9 rswk-swf |
| 653 | |a Components & Devices | ||
| 653 | |a Electrical & Electronics Engineering | ||
| 653 | |a Electronic Materials | ||
| 653 | |a Elektronische Materialien | ||
| 653 | |a Elektrotechnik u. Elektronik | ||
| 653 | |a Halbleiterphysik | ||
| 653 | |a Komponenten u. Bauelemente | ||
| 653 | |a Materials Science | ||
| 653 | |a Materialwissenschaften | ||
| 653 | |a Physics | ||
| 653 | |a Physik | ||
| 653 | |a Semiconductor Physics | ||
| 653 | |a EE60: Komponenten u. Bauelemente | ||
| 653 | |a MS40: Elektronische Materialien | ||
| 653 | |a PH62: Halbleiterphysik | ||
| 689 | 0 | 0 | |a Zweidimensionales Material |0 (DE-588)1216131074 |D s |
| 689 | 0 | 1 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 0 | 2 | |a Halbleiterwerkstoff |0 (DE-588)4158817-4 |D s |
| 689 | 0 | 3 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | 4 | |a Elektronisches Gerät |0 (DE-588)4127635-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Wei, Zhongming |e Verfasser |0 (DE-588)1212221664 |4 aut | |
| 700 | 1 | |a Kang, Jun |e Verfasser |0 (DE-588)1212222091 |4 aut | |
| 710 | 2 | |a Wiley-VCH |0 (DE-588)16179388-5 |4 pbl | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, PDF |z 978-3-527-81593-7 |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, EPUB |z 978-3-527-81595-1 |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, oBook |z 978-3-527-81596-8 |
| 856 | 4 | 2 | |m X:MVB |u http://www.wiley-vch.de/publish/dt/books/ISBN978-3-527-34496-3/ |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032213732&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-032213732 | ||
Datensatz im Suchindex
| _version_ | 1804181605653151744 |
|---|---|
| adam_text | CONTENTS
ABOUT
THE
AUTHORS
XIII
ACKNOWLEDGMENTS
XV
1
INTRODUCTION
1
1.1
BACKGROUND
1
1.2
TYPES
OF
2D
MATERIALS
4
1.3
PERSPECTIVE
OF
2D
MATERIALS
6
REFERENCES
7
2
ELECTRONIC
STRUCTURE
OF
2D
SEMICONDUCTING
ATOMIC
CRYSTALS
9
2.1
THEORETICAL
METHODS
FOR
STUDY
OF
2D
SEMICONDUCTORS
9
2.1.1
DENSITY FUNCTIONAL
THEORY
9
2.1.2
LINEAR
SCALING
THREE-DIMENSIONAL
FRAGMENT
(LS3DF)
METHOD
10
2.1.3
GW
APPROXIMATION
10
2.1.4
SEMIEMPIRICAL
TIGHT-BINDING
METHOD
10
2.1.5
NONEQUILIBRIUM
GREEN
*
S
FUNCTION
METHOD
11
2.2
ELECTRONIC
STRUCTURE
OF
2D
SEMICONDUCTORS
11
2.2.1
GRAPHYNE
FAMILY
MEMBERS
11
2.2.2
NITROGENATED
HOLEY
GRAPHENE
14
2.2.3
TRANSITION
METAL
DICHALCOGENIDES
15
2.3
PREDICTION
OF
NOVEL
PROPERTIES
IN
2D
MOIRE
HETEROSTRUCTURES
19
2.3.1
MOS
2
/MOSE
2
MOIRE
STRUCTURE
19
2.3.2
GRAPHENE/NITROGENATED
HOLEY
GRAPHENE
MOIRE
STRUCTURE
26
2.3.2.1
ATOMIC
STRUCTURE:
ORDERED
STACKING
VERSUS
MOIRE
PATTERN
26
2.3.2.2
RENORMALIZED
FERMI
VELOCITY
31
REFERENCES
33
3
TUNING
THE
ELECTRONIC
PROPERTIES
OF
2D
MATERIALS
BY
SIZE
CONTROL,
STRAIN
ENGINEERING,
AND
ELECTRIC
FIELD
MODULATION
35
3.1
SIZE
CONTROL
35
3.2
STRAIN
ENGINEERING
40
3.3
ELECTRIC
FIELD
MODULATION
48
REFERENCES
52
X
CONTENTS
4
TRANSPORT
PROPERTIES
OF
TWO-DIMENSIONAL
MATERIALS:
THEORETICAL
STUDIES
55
4.1
SYMMETRY-DEPENDENT
SPIN
TRANSPORT
PROPERTIES
OF
GRAPHENE-LIKE
NANORIBBONS
55
4.1.1
GRAPHENE
NANORIBBONS
55
4.1.2
GRAPHYNE
NANORIBBON
57
4.1.3
SILICENE
NANORIBBONS
59
4.2
CHARGE
TRANSPORT
PROPERTIES
OF
TWO-DIMENSIONAL
MATERIALS
61
4.2.1
PHONON
SCATTERING
MECHANISM
IN
TRANSPORT
PROPERTIES
OF
GRAPHENE
61
4.2.2
PHONON
SCATTERING
MECHANISM
IN
TRANSPORT
PROPERTIES
OF
TRANSITION
METAL
DICHALCOGENIDES
63
4.2.3
ANISOTROPIC
TRANSPORT
PROPERTIES
OF
2D
GROUP-VA
SEMICONDUCTORS
67
4.3
CONTACTS
BETWEEN
2D
SEMICONDUCTORS
AND
METAL
ELECTRODES
69
4.3.1
CARRIER
SCHOTTKY
BARRIERS
AT
THE
INTERFACES
BETWEEN
2D
SEMICONDUCTORS
AND
METAL
ELECTRODES
69
4.3.2
PARTIAL
FERMI
LEVEL
PINNING
AND
TUNABILITY
OF
SCHOTTKY
BARRIER
AT
2D
SEMICONDUCTOR-METAL
INTERFACES
70
4.3.3
ROLE
OF
DEFECTS
IN
ENHANCED
FERMI
LEVEL
PINNING
IN
2D
SEMICONDUCTOR/METAL
CONTACTS
72
REFERENCES
75
5
PREPARATION
AND
PROPERTIES
OF
2D
SEMICONDUCTORS
79
5.1
PREPARATION
METHODS
79
5.1.1
MECHANICAL
EXFOLIATION
79
5.1.2
LIQUID-PHASE
EXFOLIATION
81
5.1.3
VAPOR-PHASE
DEPOSITION
TECHNIQUES
85
5.2
CHARACTERIZATIONS
OF
2D
SEMICONDUCTORS
90
5.2.1
SURFACE
MORPHOLOGY
(SEM,
OM,
AND
TEM)
90
5.2.2
THICKNESS
(RAMAN,
AFM,
AND
HRTEM)
92
5.2.3
PHASE
STRUCTURE
(HRTEM
AND
STEM)
93
5.2.4
BAND
STRUCTURE
(OPTICAL
ABSORPTION
AND
PHOTOLUMINESCENCE,
ARPES)
94
5.2.5
CHEMICAL
COMPOSITION
AND
CHEMICAL
STATES
(XPS
AND
EDS)
94
5.3
ELECTROCHEMICAL
PROPERTIES
OF
2D
SEMICONDUCTORS
96
REFERENCES
97
6
PROPERTIES
OF
2D
ALLOYING
AND
DOPING
99
6.1
INTRODUCTION
99
6.2
ADVANTAGES
OF
2D
ALLOYS
99
6.2.1
ADJUSTABLE
BANDGAP
100
6.2.2
CARRIER-TYPE
MODULATION
103
6.2.3
PHASE
CHANGE
104
6.2.4
APPLICATION
OF
2D
SEMICONDUCTOR
ALLOYS
IN
THE
FIELD
OF
MAGNETISM
107
6.2.5
IMPROVE
DEVICE
PERFORMANCE
108
CONTENTS
XI
INDEX
167
6.3
6.3.1
6.3.2
6.3.3
6.4
6.4.1
6.4.2
6.4.3
6.5
PREPARATION
METHODS
FOR
2D
ALLOYS
110
CHEMICAL
VAPOR
TRANSPORT
(CVT)
110
PHYSICAL
VAPOR
DEPOSITION
(PVD)
111
CHEMICAL
VAPOR
DEPOSITION
(CVD)
113
CHARACTERIZATIONS
OF
2D
ALLOYS
114
STEM
115
RAMAN
SPECTROSCOPY
115
PHOTOLUMINESCENCE
(PL)
SPECTRUM
119
DOPING
OF
2D
SEMICONDUCTORS
119
REFERENCES
121
7
7.1
7.2
7.3
7.3.1
7.3.2
7.4
PROPERTIES
OF
2D
HETEROSTRUCTURES
123
CONCEPTION
AND
CATEGORIES
OF
2D
HETEROSTRUCTURES
123
ADVANTAGES
AND
APPLICATION
OF
2D
HETEROSTRUCTURES
125
PREPARATION
METHODS
FOR
2D
HETEROSTRUCTURES
129
MECHANICAL
TRANSFER:
LIQUID
METHOD
AND
DRY
METHOD
130
CHEMICAL
METHODS
131
CHARACTERIZATIONS
OF
2D
HETEROSTRUCTURES
137
REFERENCES
139
8
8.1
8.2
8.2.1
8.2.2
8.2.2.1
8.2.2.2
8.2.2.3
8.2.2.4
8.2.2.5
8.2.3
8.2.3.1
8.3
8.3.1
8.3.2
8.3.3
8.4
APPLICATION
IN
(OPTO)
ELECTRONICS
143
FIELD-EFFECT
TRANSISTORS
143
INFRARED
PHOTODETECTORS
145
FIGURES
OF
MERIT
146
PHOTODETECTION
MECHANISM
147
PHOTOTHERMOELECTRIC
EFFECT
147
BOLOMETRIC
EFFECT
147
PHOTOGATING
EFFECT
148
PHOTOVOLTAIC
EFFECT
148
PLASMONIC
EFFECT
148
TYPICAL
2D-BASED
INFRARED
PHOTODETECTORS
149
GRAPHENE
INFRARED
PHOTODETECTORS
149
2D
PHOTODETECTORS
WITH
SENSITIZERS
151
GRAPHENE-BASED
HYBRIDS
DETECTORS
151
TMD-BASED
HYBRID
DETECTORS
152
PLASMONIC
SENSITIZED
DETECTORS
153
NEW
INFRARED
PHOTODETECTORS
WITH
NARROW
BANDGAP
2D
SEMICONDUCTORS
155
8.5
8.5.1
8.5.2
FUTURE
OUTLOOK
156
OPTOELECTRONIC
MEMORY
OF
2D
SEMICONDUCTORS
156
SOLAR
CELLS
161
REFERENCES
162
9PERSPECTIVE
AND
OUTLOOK
165
|
| adam_txt |
CONTENTS
ABOUT
THE
AUTHORS
XIII
ACKNOWLEDGMENTS
XV
1
INTRODUCTION
1
1.1
BACKGROUND
1
1.2
TYPES
OF
2D
MATERIALS
4
1.3
PERSPECTIVE
OF
2D
MATERIALS
6
REFERENCES
7
2
ELECTRONIC
STRUCTURE
OF
2D
SEMICONDUCTING
ATOMIC
CRYSTALS
9
2.1
THEORETICAL
METHODS
FOR
STUDY
OF
2D
SEMICONDUCTORS
9
2.1.1
DENSITY FUNCTIONAL
THEORY
9
2.1.2
LINEAR
SCALING
THREE-DIMENSIONAL
FRAGMENT
(LS3DF)
METHOD
10
2.1.3
GW
APPROXIMATION
10
2.1.4
SEMIEMPIRICAL
TIGHT-BINDING
METHOD
10
2.1.5
NONEQUILIBRIUM
GREEN
*
S
FUNCTION
METHOD
11
2.2
ELECTRONIC
STRUCTURE
OF
2D
SEMICONDUCTORS
11
2.2.1
GRAPHYNE
FAMILY
MEMBERS
11
2.2.2
NITROGENATED
HOLEY
GRAPHENE
14
2.2.3
TRANSITION
METAL
DICHALCOGENIDES
15
2.3
PREDICTION
OF
NOVEL
PROPERTIES
IN
2D
MOIRE
HETEROSTRUCTURES
19
2.3.1
MOS
2
/MOSE
2
MOIRE
STRUCTURE
19
2.3.2
GRAPHENE/NITROGENATED
HOLEY
GRAPHENE
MOIRE
STRUCTURE
26
2.3.2.1
ATOMIC
STRUCTURE:
ORDERED
STACKING
VERSUS
MOIRE
PATTERN
26
2.3.2.2
RENORMALIZED
FERMI
VELOCITY
31
REFERENCES
33
3
TUNING
THE
ELECTRONIC
PROPERTIES
OF
2D
MATERIALS
BY
SIZE
CONTROL,
STRAIN
ENGINEERING,
AND
ELECTRIC
FIELD
MODULATION
35
3.1
SIZE
CONTROL
35
3.2
STRAIN
ENGINEERING
40
3.3
ELECTRIC
FIELD
MODULATION
48
REFERENCES
52
X
CONTENTS
4
TRANSPORT
PROPERTIES
OF
TWO-DIMENSIONAL
MATERIALS:
THEORETICAL
STUDIES
55
4.1
SYMMETRY-DEPENDENT
SPIN
TRANSPORT
PROPERTIES
OF
GRAPHENE-LIKE
NANORIBBONS
55
4.1.1
GRAPHENE
NANORIBBONS
55
4.1.2
GRAPHYNE
NANORIBBON
57
4.1.3
SILICENE
NANORIBBONS
59
4.2
CHARGE
TRANSPORT
PROPERTIES
OF
TWO-DIMENSIONAL
MATERIALS
61
4.2.1
PHONON
SCATTERING
MECHANISM
IN
TRANSPORT
PROPERTIES
OF
GRAPHENE
61
4.2.2
PHONON
SCATTERING
MECHANISM
IN
TRANSPORT
PROPERTIES
OF
TRANSITION
METAL
DICHALCOGENIDES
63
4.2.3
ANISOTROPIC
TRANSPORT
PROPERTIES
OF
2D
GROUP-VA
SEMICONDUCTORS
67
4.3
CONTACTS
BETWEEN
2D
SEMICONDUCTORS
AND
METAL
ELECTRODES
69
4.3.1
CARRIER
SCHOTTKY
BARRIERS
AT
THE
INTERFACES
BETWEEN
2D
SEMICONDUCTORS
AND
METAL
ELECTRODES
69
4.3.2
PARTIAL
FERMI
LEVEL
PINNING
AND
TUNABILITY
OF
SCHOTTKY
BARRIER
AT
2D
SEMICONDUCTOR-METAL
INTERFACES
70
4.3.3
ROLE
OF
DEFECTS
IN
ENHANCED
FERMI
LEVEL
PINNING
IN
2D
SEMICONDUCTOR/METAL
CONTACTS
72
REFERENCES
75
5
PREPARATION
AND
PROPERTIES
OF
2D
SEMICONDUCTORS
79
5.1
PREPARATION
METHODS
79
5.1.1
MECHANICAL
EXFOLIATION
79
5.1.2
LIQUID-PHASE
EXFOLIATION
81
5.1.3
VAPOR-PHASE
DEPOSITION
TECHNIQUES
85
5.2
CHARACTERIZATIONS
OF
2D
SEMICONDUCTORS
90
5.2.1
SURFACE
MORPHOLOGY
(SEM,
OM,
AND
TEM)
90
5.2.2
THICKNESS
(RAMAN,
AFM,
AND
HRTEM)
92
5.2.3
PHASE
STRUCTURE
(HRTEM
AND
STEM)
93
5.2.4
BAND
STRUCTURE
(OPTICAL
ABSORPTION
AND
PHOTOLUMINESCENCE,
ARPES)
94
5.2.5
CHEMICAL
COMPOSITION
AND
CHEMICAL
STATES
(XPS
AND
EDS)
94
5.3
ELECTROCHEMICAL
PROPERTIES
OF
2D
SEMICONDUCTORS
96
REFERENCES
97
6
PROPERTIES
OF
2D
ALLOYING
AND
DOPING
99
6.1
INTRODUCTION
99
6.2
ADVANTAGES
OF
2D
ALLOYS
99
6.2.1
ADJUSTABLE
BANDGAP
100
6.2.2
CARRIER-TYPE
MODULATION
103
6.2.3
PHASE
CHANGE
104
6.2.4
APPLICATION
OF
2D
SEMICONDUCTOR
ALLOYS
IN
THE
FIELD
OF
MAGNETISM
107
6.2.5
IMPROVE
DEVICE
PERFORMANCE
108
CONTENTS
XI
INDEX
167
6.3
6.3.1
6.3.2
6.3.3
6.4
6.4.1
6.4.2
6.4.3
6.5
PREPARATION
METHODS
FOR
2D
ALLOYS
110
CHEMICAL
VAPOR
TRANSPORT
(CVT)
110
PHYSICAL
VAPOR
DEPOSITION
(PVD)
111
CHEMICAL
VAPOR
DEPOSITION
(CVD)
113
CHARACTERIZATIONS
OF
2D
ALLOYS
114
STEM
115
RAMAN
SPECTROSCOPY
115
PHOTOLUMINESCENCE
(PL)
SPECTRUM
119
DOPING
OF
2D
SEMICONDUCTORS
119
REFERENCES
121
7
7.1
7.2
7.3
7.3.1
7.3.2
7.4
PROPERTIES
OF
2D
HETEROSTRUCTURES
123
CONCEPTION
AND
CATEGORIES
OF
2D
HETEROSTRUCTURES
123
ADVANTAGES
AND
APPLICATION
OF
2D
HETEROSTRUCTURES
125
PREPARATION
METHODS
FOR
2D
HETEROSTRUCTURES
129
MECHANICAL
TRANSFER:
LIQUID
METHOD
AND
DRY
METHOD
130
CHEMICAL
METHODS
131
CHARACTERIZATIONS
OF
2D
HETEROSTRUCTURES
137
REFERENCES
139
8
8.1
8.2
8.2.1
8.2.2
8.2.2.1
8.2.2.2
8.2.2.3
8.2.2.4
8.2.2.5
8.2.3
8.2.3.1
8.3
8.3.1
8.3.2
8.3.3
8.4
APPLICATION
IN
(OPTO)
ELECTRONICS
143
FIELD-EFFECT
TRANSISTORS
143
INFRARED
PHOTODETECTORS
145
FIGURES
OF
MERIT
146
PHOTODETECTION
MECHANISM
147
PHOTOTHERMOELECTRIC
EFFECT
147
BOLOMETRIC
EFFECT
147
PHOTOGATING
EFFECT
148
PHOTOVOLTAIC
EFFECT
148
PLASMONIC
EFFECT
148
TYPICAL
2D-BASED
INFRARED
PHOTODETECTORS
149
GRAPHENE
INFRARED
PHOTODETECTORS
149
2D
PHOTODETECTORS
WITH
SENSITIZERS
151
GRAPHENE-BASED
HYBRIDS
DETECTORS
151
TMD-BASED
HYBRID
DETECTORS
152
PLASMONIC
SENSITIZED
DETECTORS
153
NEW
INFRARED
PHOTODETECTORS
WITH
NARROW
BANDGAP
2D
SEMICONDUCTORS
155
8.5
8.5.1
8.5.2
FUTURE
OUTLOOK
156
OPTOELECTRONIC
MEMORY
OF
2D
SEMICONDUCTORS
156
SOLAR
CELLS
161
REFERENCES
162
9PERSPECTIVE
AND
OUTLOOK
165 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Li, Jingbo Wei, Zhongming Kang, Jun |
| author_GND | (DE-588)1212220870 (DE-588)1212221664 (DE-588)1212222091 |
| author_facet | Li, Jingbo Wei, Zhongming Kang, Jun |
| author_role | aut aut aut |
| author_sort | Li, Jingbo |
| author_variant | j l jl z w zw j k jk |
| building | Verbundindex |
| bvnumber | BV046805072 |
| classification_rvk | UP 3150 ZN 3460 |
| ctrlnum | (OCoLC)1159681478 (DE-599)DNB1199635510 |
| discipline | Chemie / Pharmazie Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Chemie / Pharmazie Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV046805072 |
| illustrated | Illustrated |
| index_date | 2024-07-03T14:57:10Z |
| indexdate | 2024-07-10T08:54:19Z |
| institution | BVB |
| institution_GND | (DE-588)16179388-5 |
| isbn | 9783527344963 3527344969 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032213732 |
| oclc_num | 1159681478 |
| open_access_boolean | |
| owner | DE-83 DE-703 DE-20 |
| owner_facet | DE-83 DE-703 DE-20 |
| physical | xv, 175 Seiten Illustrationen, Diagramme |
| publishDate | 2020 |
| publishDateSearch | 2020 |
| publishDateSort | 2020 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Li, Jingbo Verfasser (DE-588)1212220870 aut Two-dimensional semiconductors synthesis, physical properties and applications Jingbo Li, Zhongming Wei, Jun Kang Weinheim Wiley-VCH [2020] xv, 175 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Elektronisches Gerät (DE-588)4127635-8 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiterwerkstoff (DE-588)4158817-4 gnd rswk-swf Zweidimensionales Material (DE-588)1216131074 gnd rswk-swf Components & Devices Electrical & Electronics Engineering Electronic Materials Elektronische Materialien Elektrotechnik u. Elektronik Halbleiterphysik Komponenten u. Bauelemente Materials Science Materialwissenschaften Physics Physik Semiconductor Physics EE60: Komponenten u. Bauelemente MS40: Elektronische Materialien PH62: Halbleiterphysik Zweidimensionales Material (DE-588)1216131074 s Halbleiterphysik (DE-588)4113829-6 s Halbleiterwerkstoff (DE-588)4158817-4 s Halbleiterbauelement (DE-588)4113826-0 s Elektronisches Gerät (DE-588)4127635-8 s DE-604 Wei, Zhongming Verfasser (DE-588)1212221664 aut Kang, Jun Verfasser (DE-588)1212222091 aut Wiley-VCH (DE-588)16179388-5 pbl Erscheint auch als Online-Ausgabe, PDF 978-3-527-81593-7 Erscheint auch als Online-Ausgabe, EPUB 978-3-527-81595-1 Erscheint auch als Online-Ausgabe, oBook 978-3-527-81596-8 X:MVB http://www.wiley-vch.de/publish/dt/books/ISBN978-3-527-34496-3/ DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032213732&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Li, Jingbo Wei, Zhongming Kang, Jun Two-dimensional semiconductors synthesis, physical properties and applications Elektronisches Gerät (DE-588)4127635-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd Zweidimensionales Material (DE-588)1216131074 gnd |
| subject_GND | (DE-588)4127635-8 (DE-588)4113826-0 (DE-588)4113829-6 (DE-588)4158817-4 (DE-588)1216131074 |
| title | Two-dimensional semiconductors synthesis, physical properties and applications |
| title_auth | Two-dimensional semiconductors synthesis, physical properties and applications |
| title_exact_search | Two-dimensional semiconductors synthesis, physical properties and applications |
| title_exact_search_txtP | Two-dimensional semiconductors synthesis, physical properties and applications |
| title_full | Two-dimensional semiconductors synthesis, physical properties and applications Jingbo Li, Zhongming Wei, Jun Kang |
| title_fullStr | Two-dimensional semiconductors synthesis, physical properties and applications Jingbo Li, Zhongming Wei, Jun Kang |
| title_full_unstemmed | Two-dimensional semiconductors synthesis, physical properties and applications Jingbo Li, Zhongming Wei, Jun Kang |
| title_short | Two-dimensional semiconductors |
| title_sort | two dimensional semiconductors synthesis physical properties and applications |
| title_sub | synthesis, physical properties and applications |
| topic | Elektronisches Gerät (DE-588)4127635-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd Zweidimensionales Material (DE-588)1216131074 gnd |
| topic_facet | Elektronisches Gerät Halbleiterbauelement Halbleiterphysik Halbleiterwerkstoff Zweidimensionales Material |
| url | http://www.wiley-vch.de/publish/dt/books/ISBN978-3-527-34496-3/ http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032213732&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT lijingbo twodimensionalsemiconductorssynthesisphysicalpropertiesandapplications AT weizhongming twodimensionalsemiconductorssynthesisphysicalpropertiesandapplications AT kangjun twodimensionalsemiconductorssynthesisphysicalpropertiesandapplications AT wileyvch twodimensionalsemiconductorssynthesisphysicalpropertiesandapplications |