APA-Zitierstil (7. Ausg.)

Park, B., Ishiwara, H., Okuyama, M., Sakai, S., & Yoon, S. (2020). Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (2nd ed. 2020.). Springer Singapore. https://doi.org/10.1007/978-981-15-1212-4

Chicago-Zitierstil (17. Ausg.)

Park, Byung-Eun, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, und Sung-Min Yoon. Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. 2nd ed. 2020. Singapore: Springer Singapore, 2020. https://doi.org/10.1007/978-981-15-1212-4.

MLA-Zitierstil (9. Ausg.)

Park, Byung-Eun, et al. Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. 2nd ed. 2020. Springer Singapore, 2020. https://doi.org/10.1007/978-981-15-1212-4.