Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
Gespeichert in:
| Weitere Verfasser: | , , , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
Springer Singapore
2020
Singapore Springer |
| Ausgabe: | 2nd ed. 2020 |
| Schriftenreihe: | Topics in Applied Physics
131 |
| Schlagworte: | |
| Online-Zugang: | BFB01 TUM01 UBM01 UBT01 UBY01 Volltext |
| Beschreibung: | 1 Online-Ressource (XIV, 425 p. 313 illus., 183 illus. in color) |
| ISBN: | 9789811512124 |
| ISSN: | 0303-4216 |
| DOI: | 10.1007/978-981-15-1212-4 |
Internformat
MARC
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| 250 | |a 2nd ed. 2020 | ||
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| 650 | 4 | |a Surface and Interface Science, Thin Films | |
| 650 | 4 | |a Electronic circuits | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Microelectronics | |
| 650 | 4 | |a Materials—Surfaces | |
| 650 | 4 | |a Thin films | |
| 650 | 4 | |a Surfaces (Physics) | |
| 650 | 4 | |a Interfaces (Physical sciences) | |
| 700 | 1 | |a Park, Byung-Eun |4 edt | |
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| 700 | 1 | |a Sakai, Shigeki |4 edt | |
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Datensatz im Suchindex
| _version_ | 1804181354549608448 |
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| adam_txt | |
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| any_adam_object_boolean | |
| author2 | Park, Byung-Eun Ishiwara, Hiroshi Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min |
| author2_role | edt edt edt edt edt |
| author2_variant | b e p bep h i hi m o mo s s ss s m y smy |
| author_facet | Park, Byung-Eun Ishiwara, Hiroshi Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min |
| building | Verbundindex |
| bvnumber | BV046651821 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA |
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| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-981-15-1212-4 |
| edition | 2nd ed. 2020 |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| index_date | 2024-07-03T14:16:46Z |
| indexdate | 2024-07-10T08:50:19Z |
| institution | BVB |
| isbn | 9789811512124 |
| issn | 0303-4216 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032063025 |
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| physical | 1 Online-Ressource (XIV, 425 p. 313 illus., 183 illus. in color) |
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| publishDate | 2020 |
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| publisher | Springer Singapore Springer |
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| series2 | Topics in Applied Physics |
| spelling | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon 2nd ed. 2020 Singapore Springer Singapore 2020 Singapore Springer 1 Online-Ressource (XIV, 425 p. 313 illus., 183 illus. in color) txt rdacontent c rdamedia cr rdacarrier Topics in Applied Physics 131 0303-4216 Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films Electronic circuits Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Park, Byung-Eun edt Ishiwara, Hiroshi edt Okuyama, Masanori edt Sakai, Shigeki edt Yoon, Sung-Min edt Erscheint auch als Druck-Ausgabe 978-981-151-211-7 Erscheint auch als Druck-Ausgabe 978-981-151-213-1 Erscheint auch als Druck-Ausgabe 978-981-151-214-8 https://doi.org/10.1007/978-981-15-1212-4 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films Electronic circuits Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) |
| title | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
| title_auth | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
| title_exact_search | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
| title_exact_search_txtP | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
| title_full | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| title_fullStr | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| title_full_unstemmed | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| title_short | Ferroelectric-Gate Field Effect Transistor Memories |
| title_sort | ferroelectric gate field effect transistor memories device physics and applications |
| title_sub | Device Physics and Applications |
| topic | Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films Electronic circuits Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) |
| topic_facet | Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films Electronic circuits Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) |
| url | https://doi.org/10.1007/978-981-15-1212-4 |
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