Gallium nitride high electron mobility transistors on native substrates for power switching applications: fabrication, characterization and modelling
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Düren
Shaker Verlag
2019
|
| Ausgabe: | [1. Auflage] |
| Schriftenreihe: | Berichte aus der Halbleitertechnik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | xxxi, 212 Seiten Illustrationen 21 cm, 321 g |
| ISBN: | 9783844068856 3844068856 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV046621817 | ||
| 003 | DE-604 | ||
| 005 | 20200716 | ||
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| 008 | 200310s2019 gw a||| m||| 00||| eng d | ||
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| 020 | |a 3844068856 |9 3-8440-6885-6 | ||
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| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
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| 100 | 1 | |a Alshahed, Muhammad |d 1989- |e Verfasser |0 (DE-588)1193589878 |4 aut | |
| 245 | 1 | 0 | |a Gallium nitride high electron mobility transistors on native substrates for power switching applications |b fabrication, characterization and modelling |c Muhammad Alshahed |
| 250 | |a [1. Auflage] | ||
| 264 | 1 | |a Düren |b Shaker Verlag |c 2019 | |
| 300 | |a xxxi, 212 Seiten |b Illustrationen |c 21 cm, 321 g | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Berichte aus der Halbleitertechnik | |
| 502 | |b Dissertation |c Universität Stuttgart |d 2019 | ||
| 650 | 0 | 7 | |a Wärmeleitfähigkeit |0 (DE-588)4064191-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Hochspannungsschalter |0 (DE-588)4160256-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Thermodynamische Eigenschaft |0 (DE-588)4126056-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Verlustwärme |0 (DE-588)4318037-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Leckstrom |0 (DE-588)4382059-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a HEMT |0 (DE-588)4211873-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |8 1\p |a Electron mobility |0 (DLC)sh85042223 |2 lcsh |
| 653 | |a Bulk GaN | ||
| 653 | |a HEMT | ||
| 653 | |a III-V semiconductors | ||
| 653 | |a Native GaN | ||
| 653 | |a Power electronics | ||
| 653 | |a Power semiconductors | ||
| 653 | |a Power switching | ||
| 653 | |a Thermal modelling | ||
| 653 | |a Thermal transfer function | ||
| 653 | |a Threading dislocations | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a HEMT |0 (DE-588)4211873-6 |D s |
| 689 | 0 | 1 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 0 | 2 | |a Hochspannungsschalter |0 (DE-588)4160256-0 |D s |
| 689 | 0 | 3 | |a Leckstrom |0 (DE-588)4382059-1 |D s |
| 689 | 0 | 4 | |a Verlustwärme |0 (DE-588)4318037-1 |D s |
| 689 | 0 | 5 | |a Thermodynamische Eigenschaft |0 (DE-588)4126056-9 |D s |
| 689 | 0 | 6 | |a Wärmeleitfähigkeit |0 (DE-588)4064191-0 |D s |
| 689 | 0 | |5 DE-604 | |
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| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |
| 856 | 4 | 2 | |m B:DE-101 |q application/pdf |u https://d-nb.info/1191845311/04 |3 Inhaltsverzeichnis |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032033529&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-032033529 | ||
| 883 | 0 | |8 1\p |a maschinell gebildet |c 0,01531 |d 20200106 |q DE-101 | |
Datensatz im Suchindex
| _version_ | 1804181301852372992 |
|---|---|
| adam_text | CONTENTS
LIST
OF
ABBREVIATIONS
X
LIST
OF
FIGURES
XVI
LIST
OF
TABLES
XXX
1
INTRODUCTION
1
1.1
MOTIVATION
......................................................................................................
1
1.2
TOWARDS
GAN
POWER
SWITCHES
........................................................................
5
2
FUNDAMENTALS
AND
BACKGROUND
8
2.1
GAN
MATERIAL
SYSTEM
....................................................................................
8
2.1.1
GAN
CRYSTAL
STRUCTURE
.....................................................................
8
2.1.2
THE
FORMATION
OF
THE
TWO-DIMENSIONAL
ELECTRON
GAS
........................
10
2.2
GENERAL
CONSIDERATIONS
OF
THE
GAN
EPITAXIAL
MATERIAL
.................................
15
2.2.1
CHOICE
OF
SUBSTRATES
FOR
GAN
EPITAXY
.............................................
15
2.2.2
TYPICAL
STRUCTURE
OF
GAN
EPITAXIAL
WAFERS
.......................................
18
2.2.3
CHALLENGES
AND
PROSPECTS
IN
THE
GAN
EPITAXY
.................................
19
2.3
FABRICATION
TECHNOLOGY
OF
GAN
HEMTS
......................................................
21
2.3.1
CONVENTIONAL
AND
CMOS
COMPATIBLE
FABRICATION
............................
21
2.3.2
CHALLENGES
IN
DEVICE
FABRICATION
......................................................
26
2.4
OPERATION
PRINCIPLE
OF
GAN
HEMTS
............................................................
30
2.4.1
CURRENT
CONDUCTION
IN
THE
2DEG
AND
GATE
MODULATION
..........................
30
2.4.2
GAN-SPECIFIC
NON-IDEALITIES
IN
DEVICE
CHARACTERISTICS
..........................
32
3
ELECTRICAL
CHARACTERIZATION
OF
GAN/SI
HEMTS
35
3.1
STATIC
CHARACTERISTICS
OF
GAN
HEMTS
.........................................................
36
3.1.1
ON-STATE
GAN
HEMT
CHARACTERISTICS
................................................
36
3.1.2
OFF-STATE
GAN
HEMT
CHARACTERISTICS
................................................
38
XIII
3.2
DYNAMIC
CHARACTERISTICS
OF
GAN
HEMTS
..........................................................
49
3.2.1
TRAPPING
IN
THE
EPITAXIAL
BUFFER
LAYERS
IN
DC
POWER
SWITCHING
.
...
49
3.2.2
SURFACE-RELATED
CARRIER
TRAPPING
CHARACTERIZATION
USING
HEMTS
WITH
MULTIPLE
SECONDARY
GATES
..................................................................
54
3.3
RELIABILITY
ISSUES
OF
GAN/SI
HEMTS
................................................................
59
3.3.1
THE
ROLE
OF
THREADING
DISLOCATIONS
IN
GAN
EPITAXIAL
LAYERS
...............
60
3.3.2
IMPACT
OF
THREADING
DISLOCATIONS
ON
THE
STRUCTURAL
AND
ELECTRICAL
PROPERTIES
OF
GAN/SI
HEMTS
.............................................................
61
4
ELECTRICAL
MODELLING
OF
GAN
HEMTS
65
4.1
CASE
STUDY:
FEASIBILITY
OF
USING
GAN/SI
HEMT
IN
INSTRUMENTATION
............
66
4.1.1
BIDIRECTIONAL
POWER
SWITCH
USING
GAN
HEMT
IN
CASCODE
CONFIGU
RATION
.................................................................................................
66
4.1.2
BIDIRECTIONAL
GAN
HEMT
CASCODE
SIMULATION
RESULTS
.........................
68
4.2
COMPACT
PHYSICAL
MODELLING
OF
GAN
HEMTS
.............................................
72
4.2.1
RELATED
PREVIOUS
MODELLING
WORK
...................................................
72
4.2.2
PROPOSED
COMPACT
MODEL
DERIVATION
................................................
73
4.2.3
COMPACT
MODEL
IMPLEMENTATION
IN
VERILOG-A
.....................................
80
4.2.4
COMPACT
MODEL
VALIDATION
...............................................................
80
4.2.5
PREDICTION
OF
THE
GAN
HEMT
PERFOMANCE
BASED
ON
THE
EPITAXIAL
MATERIAL
PROPERTIES
...........................................................................
87
5
GAN
HEMTS
ON
NATIVE
GAN
SUBSTRATES
94
5.1
COMPARATIVE
EXPERIMENT
DESIGN
BETWEEN
GAN/GAN,
GAN/SAPPHIRE
AND
GAN/SI
..........................................................................................................
94
5.1.1
CHOICE
OF
SAMPLES
UNDER
INVESTIGATION
IN
THE
COMPARATIVE
STUDY
.
.
95
5.1.2
SCOPE
OF
CHARACTERIZATION
IN
THE
COMPARATIVE
STUDY
............................
97
5.2
STRUCTURAL
PROPERTIES
OF
GAN/GAN
VERSUS
GAN
ON
FOREIGN
SUBSTRATES
....
97
5.2.1
GAN/GAN
AND
GAN/SAPPHIRE
EPITAXIAL
LAYERS
DESCRIPTION
...............
97
5.2.2
TEM
ANALYSES
OF
THE
GAN
ON
DIFFERENT
SUBSTRATES
...............................
98
5.3
ELECTRICAL
PROPERTIES
OF
GAN/GAN
HEMTS
.....................................................
101
5.3.1
STATIC
CHARACTERISTICS
OF
GAN/GAN
VERSUS
GAN/FOREIGN
SUBSTRATES
.
.
101
5.3.2
DYNAMIC
CHARACTERISTICS
OF
GAN/GAN
VERSUS
GAN/FOREIGN
SUBSTRATES
106
5.3.3
ENERGY
DIFFRACTIVE
X-RAY
SPECTROSCOPY
RESULTS
FOR
GAN/GAN
AND
GAN/SAPPHIRE
EPITAXIAL
MATERIAL
.........................................................
113
XIV
6
THERMAL
CHARACTERIZATION
OF
GAN
AND
SI
CHIPS
116
6.1
INDIRECT
THERMAL
INVESTIGATIONS
........................................................................
117
6.1.1
SELF-HEATING
IN
GAN
DEVICES
..............................................................
117
6.1.2
SUBSTRATE
TEMPERATURE
EFFECT
ON
GAN
HEMTS
...................................
121
6.2
DIRECT
THERMAL
INVESTIGATIONS
..........................................................................
127
6.2.1
THERMAL
CHIP
DESIGN
..........................................................................
127
6.2.2
TRANSIENT
THERMAL
ANALYSIS
.................................................................
134
6.2.3
STEADY-STATE
SURFACE
TEMPERATURE
MAPPING
.........................................
137
6.2.4
THERMAL
TRANSFER
FUNCTION
EXTRACTION
METHODOLOGY
..........................
142
7
CONCLUSION
AND
OUTLOOK
151
A
SCRIPTS
LISTING
154
A.L
MATLAB
SCRIPTS
FOR
STATISTICAL
ANALYSES
..............................................................
154
A.
2
SKILL
SCRIPTS
FOR
LAYOUT
GENERATION
....................................................................
160
B
VERILOG-A
HEMT
MODEL
181
BIBLIOGRAPHY
195
AUTHOR
PUBLICATIONS
210
CURRICULUM
VITAE
211
XV
|
| adam_txt |
CONTENTS
LIST
OF
ABBREVIATIONS
X
LIST
OF
FIGURES
XVI
LIST
OF
TABLES
XXX
1
INTRODUCTION
1
1.1
MOTIVATION
.
1
1.2
TOWARDS
GAN
POWER
SWITCHES
.
5
2
FUNDAMENTALS
AND
BACKGROUND
8
2.1
GAN
MATERIAL
SYSTEM
.
8
2.1.1
GAN
CRYSTAL
STRUCTURE
.
8
2.1.2
THE
FORMATION
OF
THE
TWO-DIMENSIONAL
ELECTRON
GAS
.
10
2.2
GENERAL
CONSIDERATIONS
OF
THE
GAN
EPITAXIAL
MATERIAL
.
15
2.2.1
CHOICE
OF
SUBSTRATES
FOR
GAN
EPITAXY
.
15
2.2.2
TYPICAL
STRUCTURE
OF
GAN
EPITAXIAL
WAFERS
.
18
2.2.3
CHALLENGES
AND
PROSPECTS
IN
THE
GAN
EPITAXY
.
19
2.3
FABRICATION
TECHNOLOGY
OF
GAN
HEMTS
.
21
2.3.1
CONVENTIONAL
AND
CMOS
COMPATIBLE
FABRICATION
.
21
2.3.2
CHALLENGES
IN
DEVICE
FABRICATION
.
26
2.4
OPERATION
PRINCIPLE
OF
GAN
HEMTS
.
30
2.4.1
CURRENT
CONDUCTION
IN
THE
2DEG
AND
GATE
MODULATION
.
30
2.4.2
GAN-SPECIFIC
NON-IDEALITIES
IN
DEVICE
CHARACTERISTICS
.
32
3
ELECTRICAL
CHARACTERIZATION
OF
GAN/SI
HEMTS
35
3.1
STATIC
CHARACTERISTICS
OF
GAN
HEMTS
.
36
3.1.1
ON-STATE
GAN
HEMT
CHARACTERISTICS
.
36
3.1.2
OFF-STATE
GAN
HEMT
CHARACTERISTICS
.
38
XIII
3.2
DYNAMIC
CHARACTERISTICS
OF
GAN
HEMTS
.
49
3.2.1
TRAPPING
IN
THE
EPITAXIAL
BUFFER
LAYERS
IN
DC
POWER
SWITCHING
.
.
49
3.2.2
SURFACE-RELATED
CARRIER
TRAPPING
CHARACTERIZATION
USING
HEMTS
WITH
MULTIPLE
SECONDARY
GATES
.
54
3.3
RELIABILITY
ISSUES
OF
GAN/SI
HEMTS
.
59
3.3.1
THE
ROLE
OF
THREADING
DISLOCATIONS
IN
GAN
EPITAXIAL
LAYERS
.
60
3.3.2
IMPACT
OF
THREADING
DISLOCATIONS
ON
THE
STRUCTURAL
AND
ELECTRICAL
PROPERTIES
OF
GAN/SI
HEMTS
.
61
4
ELECTRICAL
MODELLING
OF
GAN
HEMTS
65
4.1
CASE
STUDY:
FEASIBILITY
OF
USING
GAN/SI
HEMT
IN
INSTRUMENTATION
.
66
4.1.1
BIDIRECTIONAL
POWER
SWITCH
USING
GAN
HEMT
IN
CASCODE
CONFIGU
RATION
.
66
4.1.2
BIDIRECTIONAL
GAN
HEMT
CASCODE
SIMULATION
RESULTS
.
68
4.2
COMPACT
PHYSICAL
MODELLING
OF
GAN
HEMTS
.
72
4.2.1
RELATED
PREVIOUS
MODELLING
WORK
.
72
4.2.2
PROPOSED
COMPACT
MODEL
DERIVATION
.
73
4.2.3
COMPACT
MODEL
IMPLEMENTATION
IN
VERILOG-A
.
80
4.2.4
COMPACT
MODEL
VALIDATION
.
80
4.2.5
PREDICTION
OF
THE
GAN
HEMT
PERFOMANCE
BASED
ON
THE
EPITAXIAL
MATERIAL
PROPERTIES
.
87
5
GAN
HEMTS
ON
NATIVE
GAN
SUBSTRATES
94
5.1
COMPARATIVE
EXPERIMENT
DESIGN
BETWEEN
GAN/GAN,
GAN/SAPPHIRE
AND
GAN/SI
.
94
5.1.1
CHOICE
OF
SAMPLES
UNDER
INVESTIGATION
IN
THE
COMPARATIVE
STUDY
.
.
95
5.1.2
SCOPE
OF
CHARACTERIZATION
IN
THE
COMPARATIVE
STUDY
.
97
5.2
STRUCTURAL
PROPERTIES
OF
GAN/GAN
VERSUS
GAN
ON
FOREIGN
SUBSTRATES
.
97
5.2.1
GAN/GAN
AND
GAN/SAPPHIRE
EPITAXIAL
LAYERS
DESCRIPTION
.
97
5.2.2
TEM
ANALYSES
OF
THE
GAN
ON
DIFFERENT
SUBSTRATES
.
98
5.3
ELECTRICAL
PROPERTIES
OF
GAN/GAN
HEMTS
.
101
5.3.1
STATIC
CHARACTERISTICS
OF
GAN/GAN
VERSUS
GAN/FOREIGN
SUBSTRATES
.
.
101
5.3.2
DYNAMIC
CHARACTERISTICS
OF
GAN/GAN
VERSUS
GAN/FOREIGN
SUBSTRATES
106
5.3.3
ENERGY
DIFFRACTIVE
X-RAY
SPECTROSCOPY
RESULTS
FOR
GAN/GAN
AND
GAN/SAPPHIRE
EPITAXIAL
MATERIAL
.
113
XIV
6
THERMAL
CHARACTERIZATION
OF
GAN
AND
SI
CHIPS
116
6.1
INDIRECT
THERMAL
INVESTIGATIONS
.
117
6.1.1
SELF-HEATING
IN
GAN
DEVICES
.
117
6.1.2
SUBSTRATE
TEMPERATURE
EFFECT
ON
GAN
HEMTS
.
121
6.2
DIRECT
THERMAL
INVESTIGATIONS
.
127
6.2.1
THERMAL
CHIP
DESIGN
.
127
6.2.2
TRANSIENT
THERMAL
ANALYSIS
.
134
6.2.3
STEADY-STATE
SURFACE
TEMPERATURE
MAPPING
.
137
6.2.4
THERMAL
TRANSFER
FUNCTION
EXTRACTION
METHODOLOGY
.
142
7
CONCLUSION
AND
OUTLOOK
151
A
SCRIPTS
LISTING
154
A.L
MATLAB
SCRIPTS
FOR
STATISTICAL
ANALYSES
.
154
A.
2
SKILL
SCRIPTS
FOR
LAYOUT
GENERATION
.
160
B
VERILOG-A
HEMT
MODEL
181
BIBLIOGRAPHY
195
AUTHOR
PUBLICATIONS
210
CURRICULUM
VITAE
211
XV |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Alshahed, Muhammad 1989- |
| author_GND | (DE-588)1193589878 |
| author_facet | Alshahed, Muhammad 1989- |
| author_role | aut |
| author_sort | Alshahed, Muhammad 1989- |
| author_variant | m a ma |
| building | Verbundindex |
| bvnumber | BV046621817 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)1111702400 (DE-599)DNB1191845311 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | [1. Auflage] |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV046621817 |
| illustrated | Illustrated |
| index_date | 2024-07-03T14:08:23Z |
| indexdate | 2024-07-10T08:49:29Z |
| institution | BVB |
| institution_GND | (DE-588)1064118135 |
| isbn | 9783844068856 3844068856 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032033529 |
| oclc_num | 1111702400 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | xxxi, 212 Seiten Illustrationen 21 cm, 321 g |
| publishDate | 2019 |
| publishDateSearch | 2019 |
| publishDateSort | 2019 |
| publisher | Shaker Verlag |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spelling | Alshahed, Muhammad 1989- Verfasser (DE-588)1193589878 aut Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling Muhammad Alshahed [1. Auflage] Düren Shaker Verlag 2019 xxxi, 212 Seiten Illustrationen 21 cm, 321 g txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Dissertation Universität Stuttgart 2019 Wärmeleitfähigkeit (DE-588)4064191-0 gnd rswk-swf Hochspannungsschalter (DE-588)4160256-0 gnd rswk-swf Thermodynamische Eigenschaft (DE-588)4126056-9 gnd rswk-swf Verlustwärme (DE-588)4318037-1 gnd rswk-swf Leckstrom (DE-588)4382059-1 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf 1\p Electron mobility (DLC)sh85042223 lcsh Bulk GaN HEMT III-V semiconductors Native GaN Power electronics Power semiconductors Power switching Thermal modelling Thermal transfer function Threading dislocations (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Galliumnitrid (DE-588)4375592-6 s Hochspannungsschalter (DE-588)4160256-0 s Leckstrom (DE-588)4382059-1 s Verlustwärme (DE-588)4318037-1 s Thermodynamische Eigenschaft (DE-588)4126056-9 s Wärmeleitfähigkeit (DE-588)4064191-0 s DE-604 Shaker Verlag (DE-588)1064118135 pbl Erscheint auch als Online-Ausgabe B:DE-101 application/pdf https://d-nb.info/1191845311/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032033529&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p maschinell gebildet 0,01531 20200106 DE-101 |
| spellingShingle | Alshahed, Muhammad 1989- Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling Wärmeleitfähigkeit (DE-588)4064191-0 gnd Hochspannungsschalter (DE-588)4160256-0 gnd Thermodynamische Eigenschaft (DE-588)4126056-9 gnd Verlustwärme (DE-588)4318037-1 gnd Leckstrom (DE-588)4382059-1 gnd Galliumnitrid (DE-588)4375592-6 gnd HEMT (DE-588)4211873-6 gnd 1\p Electron mobility (DLC)sh85042223 lcsh |
| subject_GND | (DE-588)4064191-0 (DE-588)4160256-0 (DE-588)4126056-9 (DE-588)4318037-1 (DE-588)4382059-1 (DE-588)4375592-6 (DE-588)4211873-6 (DLC)sh85042223 (DE-588)4113937-9 |
| title | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling |
| title_auth | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling |
| title_exact_search | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling |
| title_exact_search_txtP | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling |
| title_full | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling Muhammad Alshahed |
| title_fullStr | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling Muhammad Alshahed |
| title_full_unstemmed | Gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication, characterization and modelling Muhammad Alshahed |
| title_short | Gallium nitride high electron mobility transistors on native substrates for power switching applications |
| title_sort | gallium nitride high electron mobility transistors on native substrates for power switching applications fabrication characterization and modelling |
| title_sub | fabrication, characterization and modelling |
| topic | Wärmeleitfähigkeit (DE-588)4064191-0 gnd Hochspannungsschalter (DE-588)4160256-0 gnd Thermodynamische Eigenschaft (DE-588)4126056-9 gnd Verlustwärme (DE-588)4318037-1 gnd Leckstrom (DE-588)4382059-1 gnd Galliumnitrid (DE-588)4375592-6 gnd HEMT (DE-588)4211873-6 gnd 1\p Electron mobility (DLC)sh85042223 lcsh |
| topic_facet | Wärmeleitfähigkeit Hochspannungsschalter Thermodynamische Eigenschaft Verlustwärme Leckstrom Galliumnitrid HEMT Electron mobility Hochschulschrift |
| url | https://d-nb.info/1191845311/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032033529&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT alshahedmuhammad galliumnitridehighelectronmobilitytransistorsonnativesubstratesforpowerswitchingapplicationsfabricationcharacterizationandmodelling AT shakerverlag galliumnitridehighelectronmobilitytransistorsonnativesubstratesforpowerswitchingapplicationsfabricationcharacterizationandmodelling |
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