Verfügbarkeit: Fast-switching monolithically integrated high-voltage GaN-on-Si power converters

Fast-switching monolithically integrated high-voltage GaN-on-Si power converters:

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Bibliographische Detailangaben
1. Verfasser:	Weiß, Beatrix 1985- (VerfasserIn)
Format:	Abschlussarbeit Buch
Sprache:	English
Veröffentlicht:	Stuttgart Fraunhofer Verlag [2018]
Schriftenreihe:	Science for systems Band 37
Schlagworte:	Galliumnitrid Schnellschalter Siliciumhalbleiter Leistungsschalter HEMT Heterostruktur-Bauelement Halbbrückenschaltung Hochspannungsschalter System-on-Chip Spannungswandler Hochschulschrift
Online-Zugang:	Inhaltstext Inhaltsverzeichnis Inhaltsverzeichnis
Beschreibung:	xxiii, 153 Seiten Illustrationen, Diagramme 21 cm
ISBN:	9783839613603 3839613604

Internformat

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Datensatz im Suchindex

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adam_text	CONTENTS ABSTRACT I ZUSAMMENFASSUNG III ACRONYMS IX LIST OF SYMBOLS XI MOTIVATION AND INTRODUCTION XV PURPOSE AND RESEARCH ISSUES XX STRUCTURE AND CONTENT OF THIS WORK XXI 1 HIGH-FREQUENCY SWITCH MODE POWER SUPPLIES 1 1.1 OPPORTUNITIES AND C HALLENGES........................................................................ 1 1.2 VOLUME AND POWER EFFICIENCY ........................................................................ 2 1.3 CROSSTALK IN FAST-SWITCHING C IRCUITS .............................................................. 5 1.3.1 STABILITY ISSUES IN FAST-SWITCHING C I R C U ITS ..................................... 6 1.3.2 ELECTROMAGNETIC COMPATIBILITY ........................................................... 8 1.4 LOSS AND EMI-REDUCTION M ETHODS ................................................................. 10 1.4.1 SOFT-SWITCHING C IRC U ITS ....................................................................... 11 1.4.2 MULTILEVEL C O N V E RTE R........................................................................... 13 1.4.3 EMI SPREAD-SPECTRUM ........................................................................ 14 1.5 CONCLUSION.......................................................................................................... 15 2 GAN-ON-SI SEMICONDUCTOR DEVICES 17 2.1 LATERAL ALGAN/GAN-ON-SI HIGH-VOLTAGE T RANSISTORS .................................. 18 2.1.1 LATERAL TRANSISTORS: 4-PORT D EV IC ES.................................................. 19 2.1.2 GAN HEMTS - G ATE-M ODULES........................................................... 20 2.2 STATE OF THE A R T ................................................................................................ 21 2.3 EPITAXY AND PROCESSING.................................................................................... 21 2.4 DEVICE D ESIG N .................................................................................................... 25 2.5 DEVICE CHARACTERISTICS AND M O D E LIN G ........................................................... 26 2.5.1 SUBSTRATE C OUPLING.............................................................................. 27 2.5.2 GAN-SCHOTTKY BARRIER D IO D E S ........................................................... 29 2.5.3 G AN -H E M T S....................................................................................... 36 2.5.4 GAN-HEMTS WITH INTEGRATED FREEWHEELING DIODES ........................ 41 2.5.5 RELEVANT DESIGN PARAMETERS AND MATERIAL P RO P E RTIE S .................... 45 2.6 CONCLUSION.......................................................................................................... 45 3 HIGH-VOLTAGE BIAS CURRENT COLLAPSE 47 3.1 LATERAL B IA S IN G ................................................................................................ 48 3.2 VERTICAL B IASIN G ................................................................................................ 49 3.2.1 STATIC SUBSTRATE B IA S IN G .................................................................... 50 3.2.2 DYNAMIC SUBSTRATE BIASING ............................................................ 57 3.2.3 SIGNIFICANCE OF SUBSTRATE BIASING FOR IC OPERATION .......................... 63 3.3 CONCLUSION.......................................................................................................... 66 4 MONOLITHIC INTEGRATION OF POWER CIRCUITS 69 4.1 STATE OF THE A R T ................................................................................................ 70 4.2 MONOLITHICALLY INTEGRATED C IRC U ITS ................................................................. 73 4.2.1 H ALF-B RIDGE.......................................................................................... 75 4.2.2 MULTILEVEL C O N V E RTE R........................................................................... 77 4.3 DEVICE A SSE M B LY ............................................................................................. 79 4.3.1 DIRECT COPPER B O N D ........................................................................... 80 4.3.2 CHIP E M B E D D IN G ................................................................................. 81 4.4 CONCLUSION.......................................................................................................... 82 5 ANALYSIS OF INTEGRATED HALF-BRIDGE SWITCHING OPERATION 85 5.1 SYNCHRONOUS ZVS BUCK C ONVERTER .......................................................... 85 5.2 DYNAMIC BEHAVIOR OF HALF-BRIDGE I C ........................................................... 90 5.2.1 DEVICES UNDER T E S T .............................................................................. 92 5.2.2 FAULT ANALYSIS FOR TOPSIDE-TIED SUBSTRATE P O TE N TIA LS ...................... 93 5.2.3 ANALYSIS FOR SEMI-FLOATING SUBSTRATE P O TE N TIA LS ...............................101 5.2.4 COMPARISON OF LOW-IMPEDANCE AND HIGH-RESISTIVE COUPLING . . . 115 5.3 EM I-EVALUATION................................................................................................... 117 5.4 CONCLUSION.............................................................................................................119 6 MULTILEVEL CONVERTER OPERATION 121 6.1 MEASUREMENT SETUP AND OPERATING P RINCIPLE..................................................121 6.2 INVERTER O P E R A TIO N ............................................................................................. 123 6.3 CONCLUSION.............................................................................................................126 7 RESULTS AND DISCUSSION 127 7.1 F IN D IN G S................................................................................................................127 7.2 COMPARISON TO STATE-OF-THE-ART I C S ................................................................. 129 7.3 LIMITATIONS AND O U TLO O K ....................................................................................130 SUMMARY 133 LIST OF PUBLICATIONS 135 BIBLIOGRAPHY 138 ACKNOWLEDGMENTS 153
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author	Weiß, Beatrix 1985-
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spelling	Weiß, Beatrix 1985- Verfasser (DE-588)1156432987 aut Fast-switching monolithically integrated high-voltage GaN-on-Si power converters Beatrix Weiß Stuttgart Fraunhofer Verlag [2018] xxiii, 153 Seiten Illustrationen, Diagramme 21 cm txt rdacontent n rdamedia nc rdacarrier Science for systems Band 37 Dissertation Albert-Ludwigs-Universität Freiburg im Breisgau 2017 Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Schnellschalter (DE-588)4573997-3 gnd rswk-swf Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf Leistungsschalter (DE-588)4167301-3 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf Halbbrückenschaltung (DE-588)4784715-3 gnd rswk-swf Hochspannungsschalter (DE-588)4160256-0 gnd rswk-swf System-on-Chip (DE-588)4740357-3 gnd rswk-swf Spannungswandler (DE-588)4182091-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Leistungsschalter (DE-588)4167301-3 s Galliumnitrid (DE-588)4375592-6 s Siliciumhalbleiter (DE-588)4274465-9 s System-on-Chip (DE-588)4740357-3 s Heterostruktur-Bauelement (DE-588)4236378-0 s HEMT (DE-588)4211873-6 s Halbbrückenschaltung (DE-588)4784715-3 s Hochspannungsschalter (DE-588)4160256-0 s Spannungswandler (DE-588)4182091-5 s Schnellschalter (DE-588)4573997-3 s DE-604 Fraunhofer IRB-Verlag (DE-588)4786605-6 pbl Science for systems Band 37 (DE-604)BV042534020 37 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=e1fbc79d5e2b4fb5bad522d65686d6b5&prov=M&dok_var=1&dok_ext=htm Inhaltstext B:DE-101 application/pdf https://d-nb.info/1176215507/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031835066&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
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title	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
title_auth	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
title_exact_search	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
title_full	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters Beatrix Weiß
title_fullStr	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters Beatrix Weiß
title_full_unstemmed	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters Beatrix Weiß
title_short	Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
title_sort	fast switching monolithically integrated high voltage gan on si power converters
topic	Galliumnitrid (DE-588)4375592-6 gnd Schnellschalter (DE-588)4573997-3 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd Leistungsschalter (DE-588)4167301-3 gnd HEMT (DE-588)4211873-6 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Halbbrückenschaltung (DE-588)4784715-3 gnd Hochspannungsschalter (DE-588)4160256-0 gnd System-on-Chip (DE-588)4740357-3 gnd Spannungswandler (DE-588)4182091-5 gnd
topic_facet	Galliumnitrid Schnellschalter Siliciumhalbleiter Leistungsschalter HEMT Heterostruktur-Bauelement Halbbrückenschaltung Hochspannungsschalter System-on-Chip Spannungswandler Hochschulschrift
url	http://deposit.dnb.de/cgi-bin/dokserv?id=e1fbc79d5e2b4fb5bad522d65686d6b5&prov=M&dok_var=1&dok_ext=htm https://d-nb.info/1176215507/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031835066&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV042534020
work_keys_str_mv	AT weißbeatrix fastswitchingmonolithicallyintegratedhighvoltageganonsipowerconverters AT fraunhoferirbverlag fastswitchingmonolithicallyintegratedhighvoltageganonsipowerconverters

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