Junctionless Field-Effect Transistors: Design, Modeling, and Simulation
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the roo...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Hoboken, New Jersey
John Wiley & Sons Inc.
[2019]
|
Schriftenreihe: | IEEE Press series on microelectronic systems
|
Schlagworte: | |
Online-Zugang: | FHA01 FHI01 Volltext |
Zusammenfassung: | A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices |
Beschreibung: | Online resource; title from digital title page (viewed on March 20, 2019) |
Beschreibung: | 1 Online-Resource (496 pages) |
ISBN: | 9781119523543 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV046418517 | ||
003 | DE-604 | ||
005 | 20210331 | ||
007 | cr|uuu---uuuuu | ||
008 | 200211s2019 |||| o||u| ||||||eng d | ||
020 | |a 9781119523543 |9 978-1-119-52354-3 | ||
024 | 7 | |a 10.1002/9781119523543 |2 doi | |
035 | |a (ZDB-35-WEL)8671409 | ||
035 | |a (OCoLC)1141141270 | ||
035 | |a (DE-599)BVBBV046418517 | ||
040 | |a DE-604 |b ger |e rda | ||
041 | 0 | |a eng | |
049 | |a DE-573 |a DE-Aug4 | ||
082 | 0 | |a 621.3815/284 |2 23 | |
100 | 1 | |a Sahay, Shubham |e Verfasser |4 aut | |
245 | 1 | 0 | |a Junctionless Field-Effect Transistors |b Design, Modeling, and Simulation |c Shubham Sahay, Mamidala Jagadesh Kumar |
264 | 1 | |a Hoboken, New Jersey |b John Wiley & Sons Inc. |c [2019] | |
300 | |a 1 Online-Resource (496 pages) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a IEEE Press series on microelectronic systems | |
500 | |a Online resource; title from digital title page (viewed on March 20, 2019) | ||
520 | |a A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. | ||
520 | |a Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. | ||
520 | |a This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices | ||
650 | 7 | |a Metal semiconductor field-effect transistors |2 fast | |
650 | 4 | |a Metal semiconductor field-effect transistors | |
650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Grenzfläche |0 (DE-588)4021991-4 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
689 | 0 | 1 | |a Grenzfläche |0 (DE-588)4021991-4 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Kumar, Mamidala Jagadesh |e Sonstige |4 oth | |
776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 1119523532 |z 9781119523536 |
856 | 4 | 0 | |u https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409 |x Aggregator |z URL des Erstveröffentlichers |3 Volltext |
912 | |a ZDB-35-WEL |a ZDB-35-WIC | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-031830988 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9781119523543 |l FHA01 |p ZDB-35-WIC |q FHA_PDA_WIC_Kauf |x Verlag |3 Volltext | |
966 | e | |u https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409 |l FHI01 |p ZDB-35-WEL |x Aggregator |3 Volltext |
Datensatz im Suchindex
_version_ | 1804180961999454208 |
---|---|
any_adam_object | |
author | Sahay, Shubham |
author_facet | Sahay, Shubham |
author_role | aut |
author_sort | Sahay, Shubham |
author_variant | s s ss |
building | Verbundindex |
bvnumber | BV046418517 |
collection | ZDB-35-WEL ZDB-35-WIC |
ctrlnum | (ZDB-35-WEL)8671409 (OCoLC)1141141270 (DE-599)BVBBV046418517 |
dewey-full | 621.3815/284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284 |
dewey-search | 621.3815/284 |
dewey-sort | 3621.3815 3284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04391nmm a2200517zc 4500</leader><controlfield tag="001">BV046418517</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20210331 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">200211s2019 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781119523543</subfield><subfield code="9">978-1-119-52354-3</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1002/9781119523543</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-35-WEL)8671409</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1141141270</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV046418517</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-573</subfield><subfield code="a">DE-Aug4</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/284</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sahay, Shubham</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Junctionless Field-Effect Transistors</subfield><subfield code="b">Design, Modeling, and Simulation</subfield><subfield code="c">Shubham Sahay, Mamidala Jagadesh Kumar</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Hoboken, New Jersey</subfield><subfield code="b">John Wiley & Sons Inc.</subfield><subfield code="c">[2019]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Resource (496 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">IEEE Press series on microelectronic systems</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Online resource; title from digital title page (viewed on March 20, 2019)</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. </subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. </subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Metal semiconductor field-effect transistors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal semiconductor field-effect transistors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Grenzfläche</subfield><subfield code="0">(DE-588)4021991-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Grenzfläche</subfield><subfield code="0">(DE-588)4021991-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kumar, Mamidala Jagadesh</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">1119523532</subfield><subfield code="z">9781119523536</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409</subfield><subfield code="x">Aggregator</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-35-WEL</subfield><subfield code="a">ZDB-35-WIC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-031830988</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/9781119523543</subfield><subfield code="l">FHA01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">FHA_PDA_WIC_Kauf</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409</subfield><subfield code="l">FHI01</subfield><subfield code="p">ZDB-35-WEL</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
id | DE-604.BV046418517 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T08:44:05Z |
institution | BVB |
isbn | 9781119523543 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031830988 |
oclc_num | 1141141270 |
open_access_boolean | |
owner | DE-573 DE-Aug4 |
owner_facet | DE-573 DE-Aug4 |
physical | 1 Online-Resource (496 pages) |
psigel | ZDB-35-WEL ZDB-35-WIC ZDB-35-WIC FHA_PDA_WIC_Kauf |
publishDate | 2019 |
publishDateSearch | 2019 |
publishDateSort | 2019 |
publisher | John Wiley & Sons Inc. |
record_format | marc |
series2 | IEEE Press series on microelectronic systems |
spelling | Sahay, Shubham Verfasser aut Junctionless Field-Effect Transistors Design, Modeling, and Simulation Shubham Sahay, Mamidala Jagadesh Kumar Hoboken, New Jersey John Wiley & Sons Inc. [2019] 1 Online-Resource (496 pages) txt rdacontent c rdamedia cr rdacarrier IEEE Press series on microelectronic systems Online resource; title from digital title page (viewed on March 20, 2019) A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices Metal semiconductor field-effect transistors fast Metal semiconductor field-effect transistors Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Grenzfläche (DE-588)4021991-4 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 s Grenzfläche (DE-588)4021991-4 s 1\p DE-604 Kumar, Mamidala Jagadesh Sonstige oth Erscheint auch als Druck-Ausgabe 1119523532 9781119523536 https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409 Aggregator URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Sahay, Shubham Junctionless Field-Effect Transistors Design, Modeling, and Simulation Metal semiconductor field-effect transistors fast Metal semiconductor field-effect transistors Feldeffekttransistor (DE-588)4131472-4 gnd Grenzfläche (DE-588)4021991-4 gnd |
subject_GND | (DE-588)4131472-4 (DE-588)4021991-4 |
title | Junctionless Field-Effect Transistors Design, Modeling, and Simulation |
title_auth | Junctionless Field-Effect Transistors Design, Modeling, and Simulation |
title_exact_search | Junctionless Field-Effect Transistors Design, Modeling, and Simulation |
title_full | Junctionless Field-Effect Transistors Design, Modeling, and Simulation Shubham Sahay, Mamidala Jagadesh Kumar |
title_fullStr | Junctionless Field-Effect Transistors Design, Modeling, and Simulation Shubham Sahay, Mamidala Jagadesh Kumar |
title_full_unstemmed | Junctionless Field-Effect Transistors Design, Modeling, and Simulation Shubham Sahay, Mamidala Jagadesh Kumar |
title_short | Junctionless Field-Effect Transistors |
title_sort | junctionless field effect transistors design modeling and simulation |
title_sub | Design, Modeling, and Simulation |
topic | Metal semiconductor field-effect transistors fast Metal semiconductor field-effect transistors Feldeffekttransistor (DE-588)4131472-4 gnd Grenzfläche (DE-588)4021991-4 gnd |
topic_facet | Metal semiconductor field-effect transistors Feldeffekttransistor Grenzfläche |
url | https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409 |
work_keys_str_mv | AT sahayshubham junctionlessfieldeffecttransistorsdesignmodelingandsimulation AT kumarmamidalajagadesh junctionlessfieldeffecttransistorsdesignmodelingandsimulation |