GaN-based high electron mobility transistors with high Al-content barriers:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Stuttgart
Fraunhofer Verlag
[2018]
|
| Series: | Science for systems
Band 36 |
| Subjects: | |
| Online Access: | Inhaltstext Inhaltsverzeichnis Inhaltsverzeichnis |
| Physical Description: | 114, xxxvi Seiten Illustrationen 21 cm |
| ISBN: | 9783839613405 383961340X |
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MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV046232261 | ||
| 003 | DE-604 | ||
| 005 | 20200108 | ||
| 007 | t | ||
| 008 | 191105s2018 gw a||| m||| 00||| eng d | ||
| 015 | |a 18,N29 |2 dnb | ||
| 015 | |a 19,A41 |2 dnb | ||
| 015 | |a 19,H11 |2 dnb | ||
| 016 | 7 | |a 1162709626 |2 DE-101 | |
| 020 | |a 9783839613405 |c Broschur : EUR 77.00 (DE), EUR 79.20 (AT), CHF 129.40 (freier Preis) |9 978-3-8396-1340-5 | ||
| 020 | |a 383961340X |9 3-8396-1340-X | ||
| 024 | 3 | |a 9783839613405 | |
| 035 | |a (OCoLC)1050689467 | ||
| 035 | |a (DE-599)DNB1162709626 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BW | ||
| 049 | |a DE-83 | ||
| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
| 084 | |a 621.3 |2 sdnb | ||
| 084 | |a 530 |2 sdnb | ||
| 100 | 1 | |a Godejohann, Birte-Julia |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a GaN-based high electron mobility transistors with high Al-content barriers |c Birte-Julia Godejohann |
| 264 | 1 | |a Stuttgart |b Fraunhofer Verlag |c [2018] | |
| 300 | |a 114, xxxvi Seiten |b Illustrationen |c 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Science for systems |v Band 36 | |
| 502 | |b Dissertation |c Universität Freiburg |d 2018 | ||
| 650 | 0 | 7 | |a HEMT |0 (DE-588)4211873-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a HEMT |0 (DE-588)4211873-6 |D s |
| 689 | 0 | 1 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 710 | 2 | |a Fraunhofer IRB-Verlag |0 (DE-588)4786605-6 |4 pbl | |
| 830 | 0 | |a Science for systems |v Band 36 |w (DE-604)BV042534020 |9 36 | |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=8e0da7bdd9774e98a689bb49e7160381&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m B:DE-101 |q application/pdf |u https://d-nb.info/1162709626/04 |3 Inhaltsverzeichnis |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031610736&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-031610736 | ||
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| _version_ | 1804180644226400256 |
|---|---|
| adam_text | INHALTSVERZEICHNIS
1
INTRODUCTION
AND
MOTIVATION
1
1.1
NITRIDE
SEMICONDUCTORS
IN
RF
POWER
ELECTRONICS
...............................................
1
1.2
AIM
AND
OUTLINE
..................................................................................................
4
2
FUNDAMENTALS
OF
GAN-BASED
HEMTS
7
2.1
MATERIAL
PROPERTIES
OF
(AI,GA,LN)N
......................................................................
7
2.1.1
CRYSTAL
STRUCTURE
AND
STRAIN
..................................................................
7
2.1.2 ELECTRICAL
PROPERTIES
...............................................................................
8
2.1.3 POLARIZATION
EFFECTS
..................................................................................
9
2.2
GROWTH
AND
CHARACTERIZATION
OF
ILL-NITRIDES
..........................................................
11
2.2.1
PLASMA-ASSISTED
MOLECULAR-BEAM
EPITAXY
............................................
12
2.2.2
METAL-ORGANIC
CHEMICAL
VAPOR
DEPOSITION
............................................
12
2.2.3
STRUCTURAL
CHARACTERIZATION
......................................................................
14
2.2.4 ELECTRICAL
CHARACTERIZATION
.....................................................................
16
2.3
HIGH
ELECTRON
MOBILITY
TRANSISTOR
.........................................................................
17
2.3.1
AIGAN/GAN
HETEROSTRUCTURE
AND
TWO-DIMENSIONAL
ELECTRON
GAS
....
17
2.3.2
SIMULATION
OF
BAND
DIAGRAMS
AND
SHEET
CARRIER
CONCENTRATION
.............
18
2.3.3
CARRIER
TRANSPORT
AND
SCATTERING
............................................................
21
2.3.4
HEMT
STRUCTURE
AND
SCALING
..................................................................
22
2.3.5
RF
PERFORMANCE
OF
TRANSISTORS
...............................................................
25
3
GROWTH
OF
HEMTS
BASED
ON
GROUP
ILL-NITRIDE
SEMICONDUCTORS
27
3.1
BINARY BARRIER
MBE
...........................................................................................
28
3.1.1
OPTIMIZATION
OF
GROWTH
PARAMETERS
......................................................
28
3.1.2
EPITAXY
FOR
DEVICE
PROCESSING
...............................................................
36
3.1.3
GAN
BUFFER
LEAKAGE
..................................................................................
38
3.1.4
BARRIER
AND
CAP
LAYER
THICKNESS
............................................................
43
3.2
BINARY BARRIER
MOCVD
.....................................................................................
46
3.2.1
AIN/GAN
HEMT
STANDARD
EPITAXY
......................................................
46
3.2.2
COMPOSITIONAL
TRANSIENTS
.........................................................................
50
3.2.3
TEMPERATURE
DEPENDENCE
AND
GROWTH
INTERRUPTIONS
............................
52
3.2.4
GAN
CAP
AND
AIN
BARRIER
LAYER
THICKNESS
............................................
53
3.3
SUMMARY
GROWTH
..................................................................................................
57
4
ACTIVE
REGION
AND
2DEG
PROPERTIES
FOR
BINARY
BARRIERS
BY
MOCVD
AND
MBE
59
4.1
HOW
DIFFERENT
ARE
MBE
AND
MOCVD
GROWN
BARRIERS?
......................................
59
4.2
AL-PROFILES
AND
INTERFACE
SHARPNESS
.....................................................................
61
4.2.1
CONCENTRATION
PROFILING
............................................................................
61
4.2.2
AS
GROWN
PROFILES
.....................................................................................
63
4.2.3
HIGH
TEMPERATURE
ANNEALING
..................................................................
66
4.2.4
TEMPERATURE
DEPENDENT
DIFFUSION
PROCESSES
.........................................
70
4.2.5
DEPENDENCE
OF
2DEG
PROPERTIES
ON
THE
AL-PROFILE
................................
74
4.3
2DEG
PROPERTIES
OF
GAN/AIN/GAN
HETEROSTRUCTURES
WITH
NON-IDEAL
INTERFACES
76
4.3.1
SIMULATING
DIFFUSE
INTERFACES
..................................................................
76
4.3.2
SIMULATION
RESULTS
USING
REAL
AL-PROFILES
...............................................
80
4.4
CONSEQUENCES
FOR
AIN/GAN
EPITAXY
..................................................................
86
5
PROCESSED
HEMTS
WITH
ULTRA-THIN
BARRIERS
FOR
MILLIMETER
WAVE
FREQUENCIES
89
5.1
PROCESS
DEVELOPMENT
FOR
HEMTS
WITH
HIGH
AL-CONTENT
BARRIERS
........................
90
5.1.1
DC-CHARACTERISTICS
..................................................................................
90
5.1.2
RF-CHARACTERISTICS
..................................................................................
98
5.2
PROCESSING
OF
HEMTS
FOR
REALIZATION
OF
MMICS
....................................................
100
5.2.1
DC-CHARACTERISTICS
OF
FETS
.....................................................................
100
5.2.2 RF-PERFORMANCE
OF
FETS
......................................................................
103
5.2.3
MMICS
AT
FREQUENCIES
FROM
70
TO
100
GHZ
.............................................
106
5.3
WHY
MOCVD
FOR
BINARY
DEVICES?
..........................................................................
109
6
CONCLUSION
AND
OUTLOOK
111
6.1
CONCLUSION
...............................................................................................................
ILL
6.2
OUTLOOK
..................................................................................................................
113
BIBLIOGRAPHY
XIII
PUBLICATIONS
XXV
CONFERENCE
PRESENTATIONS
XXVI
LIST
OF
FIGURES
XXVII
LIST
OF
TABLES
XXXIII
ACKNOWLEDGEMENT
XXXV
|
| any_adam_object | 1 |
| author | Godejohann, Birte-Julia |
| author_facet | Godejohann, Birte-Julia |
| author_role | aut |
| author_sort | Godejohann, Birte-Julia |
| author_variant | b j g bjg |
| building | Verbundindex |
| bvnumber | BV046232261 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)1050689467 (DE-599)DNB1162709626 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02203nam a2200529 cb4500</leader><controlfield tag="001">BV046232261</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20200108 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">191105s2018 gw a||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">18,N29</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">19,A41</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">19,H11</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1162709626</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783839613405</subfield><subfield code="c">Broschur : EUR 77.00 (DE), EUR 79.20 (AT), CHF 129.40 (freier Preis)</subfield><subfield code="9">978-3-8396-1340-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">383961340X</subfield><subfield code="9">3-8396-1340-X</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783839613405</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1050689467</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1162709626</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BW</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4870</subfield><subfield code="0">(DE-625)157415:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">621.3</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Godejohann, Birte-Julia</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">GaN-based high electron mobility transistors with high Al-content barriers</subfield><subfield code="c">Birte-Julia Godejohann</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Stuttgart</subfield><subfield code="b">Fraunhofer Verlag</subfield><subfield code="c">[2018]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">114, xxxvi Seiten</subfield><subfield code="b">Illustrationen</subfield><subfield code="c">21 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Science for systems</subfield><subfield code="v">Band 36</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Universität Freiburg</subfield><subfield code="d">2018</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">HEMT</subfield><subfield code="0">(DE-588)4211873-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">HEMT</subfield><subfield code="0">(DE-588)4211873-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Fraunhofer IRB-Verlag</subfield><subfield code="0">(DE-588)4786605-6</subfield><subfield code="4">pbl</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Science for systems</subfield><subfield code="v">Band 36</subfield><subfield code="w">(DE-604)BV042534020</subfield><subfield code="9">36</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=8e0da7bdd9774e98a689bb49e7160381&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">B:DE-101</subfield><subfield code="q">application/pdf</subfield><subfield code="u">https://d-nb.info/1162709626/04</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031610736&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-031610736</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV046232261 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:39:02Z |
| institution | BVB |
| institution_GND | (DE-588)4786605-6 |
| isbn | 9783839613405 383961340X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031610736 |
| oclc_num | 1050689467 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | 114, xxxvi Seiten Illustrationen 21 cm |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| publisher | Fraunhofer Verlag |
| record_format | marc |
| series | Science for systems |
| series2 | Science for systems |
| spelling | Godejohann, Birte-Julia Verfasser aut GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann Stuttgart Fraunhofer Verlag [2018] 114, xxxvi Seiten Illustrationen 21 cm txt rdacontent n rdamedia nc rdacarrier Science for systems Band 36 Dissertation Universität Freiburg 2018 HEMT (DE-588)4211873-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Galliumnitrid (DE-588)4375592-6 s DE-604 Fraunhofer IRB-Verlag (DE-588)4786605-6 pbl Science for systems Band 36 (DE-604)BV042534020 36 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=8e0da7bdd9774e98a689bb49e7160381&prov=M&dok_var=1&dok_ext=htm Inhaltstext B:DE-101 application/pdf https://d-nb.info/1162709626/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031610736&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Godejohann, Birte-Julia GaN-based high electron mobility transistors with high Al-content barriers Science for systems HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4211873-6 (DE-588)4375592-6 (DE-588)4113937-9 |
| title | GaN-based high electron mobility transistors with high Al-content barriers |
| title_auth | GaN-based high electron mobility transistors with high Al-content barriers |
| title_exact_search | GaN-based high electron mobility transistors with high Al-content barriers |
| title_full | GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann |
| title_fullStr | GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann |
| title_full_unstemmed | GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann |
| title_short | GaN-based high electron mobility transistors with high Al-content barriers |
| title_sort | gan based high electron mobility transistors with high al content barriers |
| topic | HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | HEMT Galliumnitrid Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=8e0da7bdd9774e98a689bb49e7160381&prov=M&dok_var=1&dok_ext=htm https://d-nb.info/1162709626/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031610736&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV042534020 |
| work_keys_str_mv | AT godejohannbirtejulia ganbasedhighelectronmobilitytransistorswithhighalcontentbarriers AT fraunhoferirbverlag ganbasedhighelectronmobilitytransistorswithhighalcontentbarriers |