GaN-based high electron mobility transistors with high Al-content barriers:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Stuttgart
Fraunhofer Verlag
[2018]
|
| Schriftenreihe: | Science for systems
Band 36 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | 114, xxxvi Seiten Illustrationen 21 cm |
| ISBN: | 9783839613405 383961340X |
Internformat
MARC
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| 245 | 1 | 0 | |a GaN-based high electron mobility transistors with high Al-content barriers |c Birte-Julia Godejohann |
| 264 | 1 | |a Stuttgart |b Fraunhofer Verlag |c [2018] | |
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Datensatz im Suchindex
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| adam_text | INHALTSVERZEICHNIS
1
INTRODUCTION
AND
MOTIVATION
1
1.1
NITRIDE
SEMICONDUCTORS
IN
RF
POWER
ELECTRONICS
...............................................
1
1.2
AIM
AND
OUTLINE
..................................................................................................
4
2
FUNDAMENTALS
OF
GAN-BASED
HEMTS
7
2.1
MATERIAL
PROPERTIES
OF
(AI,GA,LN)N
......................................................................
7
2.1.1
CRYSTAL
STRUCTURE
AND
STRAIN
..................................................................
7
2.1.2 ELECTRICAL
PROPERTIES
...............................................................................
8
2.1.3 POLARIZATION
EFFECTS
..................................................................................
9
2.2
GROWTH
AND
CHARACTERIZATION
OF
ILL-NITRIDES
..........................................................
11
2.2.1
PLASMA-ASSISTED
MOLECULAR-BEAM
EPITAXY
............................................
12
2.2.2
METAL-ORGANIC
CHEMICAL
VAPOR
DEPOSITION
............................................
12
2.2.3
STRUCTURAL
CHARACTERIZATION
......................................................................
14
2.2.4 ELECTRICAL
CHARACTERIZATION
.....................................................................
16
2.3
HIGH
ELECTRON
MOBILITY
TRANSISTOR
.........................................................................
17
2.3.1
AIGAN/GAN
HETEROSTRUCTURE
AND
TWO-DIMENSIONAL
ELECTRON
GAS
....
17
2.3.2
SIMULATION
OF
BAND
DIAGRAMS
AND
SHEET
CARRIER
CONCENTRATION
.............
18
2.3.3
CARRIER
TRANSPORT
AND
SCATTERING
............................................................
21
2.3.4
HEMT
STRUCTURE
AND
SCALING
..................................................................
22
2.3.5
RF
PERFORMANCE
OF
TRANSISTORS
...............................................................
25
3
GROWTH
OF
HEMTS
BASED
ON
GROUP
ILL-NITRIDE
SEMICONDUCTORS
27
3.1
BINARY BARRIER
MBE
...........................................................................................
28
3.1.1
OPTIMIZATION
OF
GROWTH
PARAMETERS
......................................................
28
3.1.2
EPITAXY
FOR
DEVICE
PROCESSING
...............................................................
36
3.1.3
GAN
BUFFER
LEAKAGE
..................................................................................
38
3.1.4
BARRIER
AND
CAP
LAYER
THICKNESS
............................................................
43
3.2
BINARY BARRIER
MOCVD
.....................................................................................
46
3.2.1
AIN/GAN
HEMT
STANDARD
EPITAXY
......................................................
46
3.2.2
COMPOSITIONAL
TRANSIENTS
.........................................................................
50
3.2.3
TEMPERATURE
DEPENDENCE
AND
GROWTH
INTERRUPTIONS
............................
52
3.2.4
GAN
CAP
AND
AIN
BARRIER
LAYER
THICKNESS
............................................
53
3.3
SUMMARY
GROWTH
..................................................................................................
57
4
ACTIVE
REGION
AND
2DEG
PROPERTIES
FOR
BINARY
BARRIERS
BY
MOCVD
AND
MBE
59
4.1
HOW
DIFFERENT
ARE
MBE
AND
MOCVD
GROWN
BARRIERS?
......................................
59
4.2
AL-PROFILES
AND
INTERFACE
SHARPNESS
.....................................................................
61
4.2.1
CONCENTRATION
PROFILING
............................................................................
61
4.2.2
AS
GROWN
PROFILES
.....................................................................................
63
4.2.3
HIGH
TEMPERATURE
ANNEALING
..................................................................
66
4.2.4
TEMPERATURE
DEPENDENT
DIFFUSION
PROCESSES
.........................................
70
4.2.5
DEPENDENCE
OF
2DEG
PROPERTIES
ON
THE
AL-PROFILE
................................
74
4.3
2DEG
PROPERTIES
OF
GAN/AIN/GAN
HETEROSTRUCTURES
WITH
NON-IDEAL
INTERFACES
76
4.3.1
SIMULATING
DIFFUSE
INTERFACES
..................................................................
76
4.3.2
SIMULATION
RESULTS
USING
REAL
AL-PROFILES
...............................................
80
4.4
CONSEQUENCES
FOR
AIN/GAN
EPITAXY
..................................................................
86
5
PROCESSED
HEMTS
WITH
ULTRA-THIN
BARRIERS
FOR
MILLIMETER
WAVE
FREQUENCIES
89
5.1
PROCESS
DEVELOPMENT
FOR
HEMTS
WITH
HIGH
AL-CONTENT
BARRIERS
........................
90
5.1.1
DC-CHARACTERISTICS
..................................................................................
90
5.1.2
RF-CHARACTERISTICS
..................................................................................
98
5.2
PROCESSING
OF
HEMTS
FOR
REALIZATION
OF
MMICS
....................................................
100
5.2.1
DC-CHARACTERISTICS
OF
FETS
.....................................................................
100
5.2.2 RF-PERFORMANCE
OF
FETS
......................................................................
103
5.2.3
MMICS
AT
FREQUENCIES
FROM
70
TO
100
GHZ
.............................................
106
5.3
WHY
MOCVD
FOR
BINARY
DEVICES?
..........................................................................
109
6
CONCLUSION
AND
OUTLOOK
111
6.1
CONCLUSION
...............................................................................................................
ILL
6.2
OUTLOOK
..................................................................................................................
113
BIBLIOGRAPHY
XIII
PUBLICATIONS
XXV
CONFERENCE
PRESENTATIONS
XXVI
LIST
OF
FIGURES
XXVII
LIST
OF
TABLES
XXXIII
ACKNOWLEDGEMENT
XXXV
|
| any_adam_object | 1 |
| author | Godejohann, Birte-Julia |
| author_facet | Godejohann, Birte-Julia |
| author_role | aut |
| author_sort | Godejohann, Birte-Julia |
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| bvnumber | BV046232261 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)1050689467 (DE-599)DNB1162709626 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| spelling | Godejohann, Birte-Julia Verfasser aut GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann Stuttgart Fraunhofer Verlag [2018] 114, xxxvi Seiten Illustrationen 21 cm txt rdacontent n rdamedia nc rdacarrier Science for systems Band 36 Dissertation Universität Freiburg 2018 HEMT (DE-588)4211873-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Galliumnitrid (DE-588)4375592-6 s DE-604 Fraunhofer IRB-Verlag (DE-588)4786605-6 pbl Science for systems Band 36 (DE-604)BV042534020 36 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=8e0da7bdd9774e98a689bb49e7160381&prov=M&dok_var=1&dok_ext=htm Inhaltstext B:DE-101 application/pdf https://d-nb.info/1162709626/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031610736&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Godejohann, Birte-Julia GaN-based high electron mobility transistors with high Al-content barriers Science for systems HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4211873-6 (DE-588)4375592-6 (DE-588)4113937-9 |
| title | GaN-based high electron mobility transistors with high Al-content barriers |
| title_auth | GaN-based high electron mobility transistors with high Al-content barriers |
| title_exact_search | GaN-based high electron mobility transistors with high Al-content barriers |
| title_full | GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann |
| title_fullStr | GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann |
| title_full_unstemmed | GaN-based high electron mobility transistors with high Al-content barriers Birte-Julia Godejohann |
| title_short | GaN-based high electron mobility transistors with high Al-content barriers |
| title_sort | gan based high electron mobility transistors with high al content barriers |
| topic | HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | HEMT Galliumnitrid Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=8e0da7bdd9774e98a689bb49e7160381&prov=M&dok_var=1&dok_ext=htm https://d-nb.info/1162709626/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031610736&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV042534020 |
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