InGaN nanowires on silicon:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e. V.
2019
|
| Ausgabe: | 1. Auflage |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
Vol. 228 |
| Schlagworte: | |
| Beschreibung: | viii, 142 Seiten Illustrationen, Diagramme |
| ISBN: | 9783946379287 |
Internformat
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Datensatz im Suchindex
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| isbn | 9783946379287 |
| language | English |
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| physical | viii, 142 Seiten Illustrationen, Diagramme |
| publishDate | 2019 |
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| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Weiszer, Saskia Maria Edda Verfasser aut InGaN nanowires on silicon Saskia Maria Edda Weiszer 1. Auflage Garching Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e. V. 2019 viii, 142 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology Vol. 228 Dissertation Technische Universität München 2019 (DE-588)4113937-9 Hochschulschrift gnd-content Selected topics of semiconductor physics and technology Vol. 228 (DE-604)BV011499438 228 |
| spellingShingle | Weiszer, Saskia Maria Edda InGaN nanowires on silicon Selected topics of semiconductor physics and technology |
| subject_GND | (DE-588)4113937-9 |
| title | InGaN nanowires on silicon |
| title_auth | InGaN nanowires on silicon |
| title_exact_search | InGaN nanowires on silicon |
| title_full | InGaN nanowires on silicon Saskia Maria Edda Weiszer |
| title_fullStr | InGaN nanowires on silicon Saskia Maria Edda Weiszer |
| title_full_unstemmed | InGaN nanowires on silicon Saskia Maria Edda Weiszer |
| title_short | InGaN nanowires on silicon |
| title_sort | ingan nanowires on silicon |
| topic_facet | Hochschulschrift |
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