Internal photoemission spectroscopy: principles and applications
The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Oxford, UK Boston
Elsevier
2008
|
| Ausgabe: | 1st ed |
| Schlagworte: | |
| Online-Zugang: | FLA01 URL des Erstveröffentlichers |
| Zusammenfassung: | The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors |
| Beschreibung: | Includes bibliographical references (pages 263-289) and index |
| Beschreibung: | 1 online resource (xvi, 295 pages) illustrations |
| ISBN: | 9780080451459 0080451454 |
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| 245 | 1 | 0 | |a Internal photoemission spectroscopy |b principles and applications |c Valery V. Afanasʹev |
| 250 | |a 1st ed | ||
| 264 | 1 | |a Oxford, UK |a Boston |b Elsevier |c 2008 | |
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| 500 | |a Includes bibliographical references (pages 263-289) and index | ||
| 520 | |a The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors | ||
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Datensatz im Suchindex
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| author | Afanasʹev, V. V. |
| author_facet | Afanasʹev, V. V. |
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| dewey-full | 543/.52 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 543 - Analytical chemistry |
| dewey-raw | 543/.52 |
| dewey-search | 543/.52 |
| dewey-sort | 3543 252 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie |
| edition | 1st ed |
| format | Electronic eBook |
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| id | DE-604.BV046124676 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:35:50Z |
| institution | BVB |
| isbn | 9780080451459 0080451454 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031505130 |
| oclc_num | 228147983 |
| open_access_boolean | |
| physical | 1 online resource (xvi, 295 pages) illustrations |
| psigel | ZDB-33-ESD ZDB-33-ESD FLA_PDA_ESD |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Elsevier |
| record_format | marc |
| spelling | Afanasʹev, V. V. Verfasser aut Internal photoemission spectroscopy principles and applications Valery V. Afanasʹev 1st ed Oxford, UK Boston Elsevier 2008 1 online resource (xvi, 295 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references (pages 263-289) and index The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors Photoelectron spectroscopy fast Photoemission fast Semiconductors / Junctions fast Photoelectron spectroscopy Photoemission Semiconductors Junctions http://www.sciencedirect.com/science/book/9780080451459 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Afanasʹev, V. V. Internal photoemission spectroscopy principles and applications Photoelectron spectroscopy fast Photoemission fast Semiconductors / Junctions fast Photoelectron spectroscopy Photoemission Semiconductors Junctions |
| title | Internal photoemission spectroscopy principles and applications |
| title_auth | Internal photoemission spectroscopy principles and applications |
| title_exact_search | Internal photoemission spectroscopy principles and applications |
| title_full | Internal photoemission spectroscopy principles and applications Valery V. Afanasʹev |
| title_fullStr | Internal photoemission spectroscopy principles and applications Valery V. Afanasʹev |
| title_full_unstemmed | Internal photoemission spectroscopy principles and applications Valery V. Afanasʹev |
| title_short | Internal photoemission spectroscopy |
| title_sort | internal photoemission spectroscopy principles and applications |
| title_sub | principles and applications |
| topic | Photoelectron spectroscopy fast Photoemission fast Semiconductors / Junctions fast Photoelectron spectroscopy Photoemission Semiconductors Junctions |
| topic_facet | Photoelectron spectroscopy Photoemission Semiconductors / Junctions Semiconductors Junctions |
| url | http://www.sciencedirect.com/science/book/9780080451459 |
| work_keys_str_mv | AT afanasʹevvv internalphotoemissionspectroscopyprinciplesandapplications |