Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects:
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still...
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
1999
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| Schlagworte: | |
| Online-Zugang: | FLA01 URL des Erstveröffentlichers |
| Zusammenfassung: | Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them |
| Beschreibung: | Includes bibliographical references and indexes |
| Beschreibung: | 1 online resource (xxvii, 933 pages) illustrations, portraits |
| ISBN: | 9780444818010 0444818014 1281058106 9781281058102 |
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| 245 | 1 | 0 | |a Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects |c edited by Gérard Barbottin and André Vapaille |
| 246 | 1 | 3 | |a New insulators, devices and radiation effects |
| 264 | 1 | |c 1999 | |
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| 520 | |a Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them | ||
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| illustrated | Illustrated |
| indexdate | 2024-07-10T08:35:48Z |
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| isbn | 9780444818010 0444818014 1281058106 9781281058102 |
| language | English |
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| oclc_num | 162131299 |
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| physical | 1 online resource (xxvii, 933 pages) illustrations, portraits |
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| spelling | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects edited by Gérard Barbottin and André Vapaille New insulators, devices and radiation effects 1999 1 online resource (xxvii, 933 pages) illustrations, portraits txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and indexes Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them English text with abstracts in French and German Integrated circuits / Passivation fast Silicon / Electric properties fast Silicon Electric properties Integrated circuits Passivation Vapaille, André 1933- edt Barbottin, Gérard 1946- edt http://www.sciencedirect.com/science/book/9780444818010 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects Integrated circuits / Passivation fast Silicon / Electric properties fast Silicon Electric properties Integrated circuits Passivation |
| title | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects |
| title_alt | New insulators, devices and radiation effects |
| title_auth | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects |
| title_exact_search | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects |
| title_full | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects edited by Gérard Barbottin and André Vapaille |
| title_fullStr | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects edited by Gérard Barbottin and André Vapaille |
| title_full_unstemmed | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects edited by Gérard Barbottin and André Vapaille |
| title_short | Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects |
| title_sort | instabilities in silicon devices volume 3 new insulators devices and radiation effects |
| topic | Integrated circuits / Passivation fast Silicon / Electric properties fast Silicon Electric properties Integrated circuits Passivation |
| topic_facet | Integrated circuits / Passivation Silicon / Electric properties Silicon Electric properties Integrated circuits Passivation |
| url | http://www.sciencedirect.com/science/book/9780444818010 |
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