III-nitride semiconductors: electrical, structural, and defects properties
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor syst...
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam New York
Elsevier
2000
|
| Schlagworte: | |
| Online-Zugang: | FLA01 Volltext |
| Zusammenfassung: | Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | 1 online resource (xiv, 448 pages) illustrations |
| ISBN: | 9780444506306 0444506306 9780080534442 0080534449 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV046123461 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 190827s2000 |||| o||u| ||||||eng d | ||
| 020 | |a 9780444506306 |9 978-0-444-50630-6 | ||
| 020 | |a 0444506306 |9 0-444-50630-6 | ||
| 020 | |a 9780080534442 |9 978-0-08-053444-2 | ||
| 020 | |a 0080534449 |9 0-08-053444-9 | ||
| 035 | |a (ZDB-33-ESD)ocn162130557 | ||
| 035 | |a (OCoLC)162130557 | ||
| 035 | |a (DE-599)BVBBV046123461 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 082 | 0 | |a 621.3815/2 |2 22 | |
| 245 | 1 | 0 | |a III-nitride semiconductors |b electrical, structural, and defects properties |c editor, Omar Manasreh |
| 246 | 1 | 3 | |a 3-nitride semiconductors |
| 246 | 1 | 3 | |a Three-nitride semiconductors |
| 264 | 1 | |a Amsterdam |a New York |b Elsevier |c 2000 | |
| 300 | |a 1 online resource (xiv, 448 pages) |b illustrations | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 520 | |a Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Electric conductivity |2 fast | |
| 650 | 7 | |a Nitrides |2 fast | |
| 650 | 7 | |a Semiconductors / Materials |2 fast | |
| 650 | 7 | |a Drei-Fünf-Halbleiter |2 gnd | |
| 650 | 7 | |a Nitride |2 gnd | |
| 650 | 4 | |a Nitrides | |
| 650 | 4 | |a Electric conductivity | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nitride |0 (DE-588)4171929-3 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 0 | 1 | |a Nitride |0 (DE-588)4171929-3 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Manasreh, Mahmoud Omar |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://www.sciencedirect.com/science/book/9780444506306 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-33-ESD | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-031503914 | ||
| 347 | |a text file |2 rda | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://www.sciencedirect.com/science/book/9780444506306 |l FLA01 |p ZDB-33-ESD |q FLA_PDA_ESD |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804180440417828864 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV046123461 |
| collection | ZDB-33-ESD |
| ctrlnum | (ZDB-33-ESD)ocn162130557 (OCoLC)162130557 (DE-599)BVBBV046123461 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04258nmm a2200589zc 4500</leader><controlfield tag="001">BV046123461</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">190827s2000 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780444506306</subfield><subfield code="9">978-0-444-50630-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0444506306</subfield><subfield code="9">0-444-50630-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780080534442</subfield><subfield code="9">978-0-08-053444-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0080534449</subfield><subfield code="9">0-08-053444-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-33-ESD)ocn162130557</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)162130557</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV046123461</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">22</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">III-nitride semiconductors</subfield><subfield code="b">electrical, structural, and defects properties</subfield><subfield code="c">editor, Omar Manasreh</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">3-nitride semiconductors</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Three-nitride semiconductors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam</subfield><subfield code="a">New York</subfield><subfield code="b">Elsevier</subfield><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xiv, 448 pages)</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electric conductivity</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrides</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Materials</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="2">gnd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitride</subfield><subfield code="2">gnd</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nitrides</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electric conductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Manasreh, Mahmoud Omar</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/book/9780444506306</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-031503914</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="a">text file</subfield><subfield code="2">rda</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.sciencedirect.com/science/book/9780444506306</subfield><subfield code="l">FLA01</subfield><subfield code="p">ZDB-33-ESD</subfield><subfield code="q">FLA_PDA_ESD</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV046123461 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:35:48Z |
| institution | BVB |
| isbn | 9780444506306 0444506306 9780080534442 0080534449 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031503914 |
| oclc_num | 162130557 |
| open_access_boolean | |
| physical | 1 online resource (xiv, 448 pages) illustrations |
| psigel | ZDB-33-ESD ZDB-33-ESD FLA_PDA_ESD |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Elsevier |
| record_format | marc |
| spelling | III-nitride semiconductors electrical, structural, and defects properties editor, Omar Manasreh 3-nitride semiconductors Three-nitride semiconductors Amsterdam New York Elsevier 2000 1 online resource (xiv, 448 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Electric conductivity fast Nitrides fast Semiconductors / Materials fast Drei-Fünf-Halbleiter gnd Nitride gnd Nitrides Electric conductivity Semiconductors Materials Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nitride (DE-588)4171929-3 s 1\p DE-604 Manasreh, Mahmoud Omar Sonstige oth http://www.sciencedirect.com/science/book/9780444506306 Verlag URL des Erstveröffentlichers Volltext text file rda 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | III-nitride semiconductors electrical, structural, and defects properties TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Electric conductivity fast Nitrides fast Semiconductors / Materials fast Drei-Fünf-Halbleiter gnd Nitride gnd Nitrides Electric conductivity Semiconductors Materials Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Nitride (DE-588)4171929-3 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4171929-3 |
| title | III-nitride semiconductors electrical, structural, and defects properties |
| title_alt | 3-nitride semiconductors Three-nitride semiconductors |
| title_auth | III-nitride semiconductors electrical, structural, and defects properties |
| title_exact_search | III-nitride semiconductors electrical, structural, and defects properties |
| title_full | III-nitride semiconductors electrical, structural, and defects properties editor, Omar Manasreh |
| title_fullStr | III-nitride semiconductors electrical, structural, and defects properties editor, Omar Manasreh |
| title_full_unstemmed | III-nitride semiconductors electrical, structural, and defects properties editor, Omar Manasreh |
| title_short | III-nitride semiconductors |
| title_sort | iii nitride semiconductors electrical structural and defects properties |
| title_sub | electrical, structural, and defects properties |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Electric conductivity fast Nitrides fast Semiconductors / Materials fast Drei-Fünf-Halbleiter gnd Nitride gnd Nitrides Electric conductivity Semiconductors Materials Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Electric conductivity Nitrides Semiconductors / Materials Drei-Fünf-Halbleiter Nitride Semiconductors Materials |
| url | http://www.sciencedirect.com/science/book/9780444506306 |
| work_keys_str_mv | AT manasrehmahmoudomar iiinitridesemiconductorselectricalstructuralanddefectsproperties AT manasrehmahmoudomar 3nitridesemiconductors AT manasrehmahmoudomar threenitridesemiconductors |