Principles of Lithography:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Bellingham, Washington, USA
SPIE Press
[2019]
|
| Ausgabe: | Fourth edition |
| Schlagworte: | |
| Beschreibung: | Chapter 1 Overview of Lithography; Problems; Chapter 2 Optical Pattern Formation; 2.1 The Problem of Imaging; 2.2 Aerial Images; 2.3 The Contributions of Physics and Chemistry; 2.4 Focus; Problems; References; Chapter 3 Photoresists; 3.1 Positive and Negative Resists; 3.2 Adhesion Promotion; 3.3 Resist Spin Coating, Softbake, - and Hardbake; 3.4 Photochemistry of Novolak/DNQ g- and i-line Resists; 3.5 Acid-Catalyzed DUV Resists; 3.6 Development and Post-Exposure Bakes; 3.7 Operational Characterization; 3.8 Line-Edge Roughness; 3.9 Multilayer Resist Processes; Problems; References; Chapter 4 Modeling and Thin-Film Effects; 4.1 Models of Optical Imaging; 4.2 Aberrations; 4.3 Modeling Photochemical Reactions; 4.4 Thin-Film Optical Effects; 4.5 Post-Exposure Bakes; 4.6 Methods for Addressing the Problems of Reflective Substrates; 4.7 Development; 4.8 Quantum Effects and Modeling; 4.9 Summary of Modeling; Problems; References; Chapter 5 Wafer Steppers and Scanners; 5.1 Overview; 5.2 Light Sources; 5.3 Illumination Systems; 5.4 Reduction Lenses; 5.5 Autofocus Systems; 5.6 The Wafer Stage; 5.7 Scanning; 5.8 Dual-Stage Exposure Tools; 5.9 Lithography Exposure Tools before Steppers; Problems; References; Chapter 6 Overlay; 6.1 Alignment Systems; 6.1.1 Classification of alignment systems; 6.1.2 Optical - methods for alignment and wafer-to-reticle referencing; 6.1.3 Number of alignment marks; 6.2 Overlay Models; 6.3 Matching; 6.4 Process-Dependent Overlay Effects; Problems; References; Chapter 7 Masks and Reticles; 7.1 Overview; 7.2 Mask Blanks; 7.3 Mechanical Optical-Pattern Generators; 7.4 Electron-Beam Lithography and Single-Beam Mask Writers; 7.5 Multi-Electron-Beam Mask Writers; 7.6 Optical Mask Writers; 7.7 Resists for Mask Making; 7.8 Etching; 7.9 Pellicles; 7.10 Mask-Defect Inspection and Repair; Problems; References; Chapter 8 Confronting the Diffraction Limit; 8.1 Off-Axis Illumination; 8.2 Optical Proximity Effects; 8.3 The Mask-Error Enhancement Factor (MEEF); 8.4 Phase-Shifting Masks; 8.5 Putting It All Together; Problems; References; Chapter 9 Metrology; 9.1 Linewidth Measurement; 9.1.1 Linewidth measurement using scanning electron microscopes; 9.1.2 Scatterometry; 9.1.3 Electrical linewidth measurement; 9.2 Measurement of Overlay; Problems; - References; Chapter 10 Immersion Lithography and the Limits of Optical Lithography; 10.1 Immersion Lithography; 10.2 The Diffraction Limit; 10.3 Improvements in Optics; 10.4 Maximum Numerical Aperture; 10.5 The Shortest Wavelength; 10.6 Improved Photoresists; 10.7 Flatter Wafers; 10.8 How Low Can k1 Go?; 10.9 How Far Can Optical Lithography Be Extended?; 10.10 Multiple Patterning; 10.11 Interferometric Lithography; Problems; References; Chapter 11 Lithography Costs; 11.1 Cost-of-Ownership; 11.1.1 Capital costs; 11.1.2 Consumables; 11.1.3 Mask costs; 11.1.4 Rework; 11.1.5 Metrology; 11.1.6 Maintenance costs; 11.1.7 Labor costs; 11.1.8 Facilities costs; 11.2 Mix-and-Match Strategies; Problems; References; Chapter 12 Extreme Ultraviolet Lithography; 12.1 Background and Multilayer Reflectors; 12.2 EUV Lithography System Overview; 12.3 EUV Masks; 12.4 Sources and Illuminators; 12.5 EUV Optics; 12.6 EUV Resists; Problems; References; Chapter 13 - Alternative Lithography Techniques; 13.1 Proximity X-ray Lithography; 13.2 Electron-Beam Direct-Write Lithography; 13.2.1 Single-beam direct-write systems; 13.2.2 Multiple-electron-beam direct-write systems; 13.2.3 Cell-projection lithography; 13.2.4 Scattering-mask electron-projection lithography; 13.3 Ion-Projection Lithography; 13.4 Imprint Lithography; 13.5 Directed Self-Assembly; Problems; References; Appendix A Coherence; Problems; References |
| Beschreibung: | xvi, 571 pages illustrations |
| ISBN: | 9781510627604 |
Internformat
MARC
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| 041 | 0 | |a eng | |
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| 100 | 1 | |a Levinson, Harry J. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Principles of Lithography |c Harry J. Levinson |
| 250 | |a Fourth edition | ||
| 264 | 1 | |a Bellingham, Washington, USA |b SPIE Press |c [2019] | |
| 300 | |a xvi, 571 pages |b illustrations | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Chapter 1 Overview of Lithography; Problems; Chapter 2 Optical Pattern Formation; 2.1 The Problem of Imaging; 2.2 Aerial Images; 2.3 The Contributions of Physics and Chemistry; 2.4 Focus; Problems; References; Chapter 3 Photoresists; 3.1 Positive and Negative Resists; 3.2 Adhesion Promotion; 3.3 Resist Spin Coating, Softbake, | ||
| 500 | |a - and Hardbake; 3.4 Photochemistry of Novolak/DNQ g- and i-line Resists; 3.5 Acid-Catalyzed DUV Resists; 3.6 Development and Post-Exposure Bakes; 3.7 Operational Characterization; 3.8 Line-Edge Roughness; 3.9 Multilayer Resist Processes; Problems; References; Chapter 4 Modeling and Thin-Film Effects; 4.1 Models of Optical Imaging; 4.2 Aberrations; 4.3 Modeling Photochemical Reactions; 4.4 Thin-Film Optical Effects; 4.5 Post-Exposure Bakes; 4.6 Methods for Addressing the Problems of Reflective Substrates; 4.7 Development; 4.8 Quantum Effects and Modeling; 4.9 Summary of Modeling; Problems; References; Chapter 5 Wafer Steppers and Scanners; 5.1 Overview; 5.2 Light Sources; 5.3 Illumination Systems; 5.4 Reduction Lenses; 5.5 Autofocus Systems; 5.6 The Wafer Stage; 5.7 Scanning; 5.8 Dual-Stage Exposure Tools; 5.9 Lithography Exposure Tools before Steppers; Problems; References; Chapter 6 Overlay; 6.1 Alignment Systems; 6.1.1 Classification of alignment systems; 6.1.2 Optical | ||
| 500 | |a - methods for alignment and wafer-to-reticle referencing; 6.1.3 Number of alignment marks; 6.2 Overlay Models; 6.3 Matching; 6.4 Process-Dependent Overlay Effects; Problems; References; Chapter 7 Masks and Reticles; 7.1 Overview; 7.2 Mask Blanks; 7.3 Mechanical Optical-Pattern Generators; 7.4 Electron-Beam Lithography and Single-Beam Mask Writers; 7.5 Multi-Electron-Beam Mask Writers; 7.6 Optical Mask Writers; 7.7 Resists for Mask Making; 7.8 Etching; 7.9 Pellicles; 7.10 Mask-Defect Inspection and Repair; Problems; References; Chapter 8 Confronting the Diffraction Limit; 8.1 Off-Axis Illumination; 8.2 Optical Proximity Effects; 8.3 The Mask-Error Enhancement Factor (MEEF); 8.4 Phase-Shifting Masks; 8.5 Putting It All Together; Problems; References; Chapter 9 Metrology; 9.1 Linewidth Measurement; 9.1.1 Linewidth measurement using scanning electron microscopes; 9.1.2 Scatterometry; 9.1.3 Electrical linewidth measurement; 9.2 Measurement of Overlay; Problems; | ||
| 500 | |a - References; Chapter 10 Immersion Lithography and the Limits of Optical Lithography; 10.1 Immersion Lithography; 10.2 The Diffraction Limit; 10.3 Improvements in Optics; 10.4 Maximum Numerical Aperture; 10.5 The Shortest Wavelength; 10.6 Improved Photoresists; 10.7 Flatter Wafers; 10.8 How Low Can k1 Go?; 10.9 How Far Can Optical Lithography Be Extended?; 10.10 Multiple Patterning; 10.11 Interferometric Lithography; Problems; References; Chapter 11 Lithography Costs; 11.1 Cost-of-Ownership; 11.1.1 Capital costs; 11.1.2 Consumables; 11.1.3 Mask costs; 11.1.4 Rework; 11.1.5 Metrology; 11.1.6 Maintenance costs; 11.1.7 Labor costs; 11.1.8 Facilities costs; 11.2 Mix-and-Match Strategies; Problems; References; Chapter 12 Extreme Ultraviolet Lithography; 12.1 Background and Multilayer Reflectors; 12.2 EUV Lithography System Overview; 12.3 EUV Masks; 12.4 Sources and Illuminators; 12.5 EUV Optics; 12.6 EUV Resists; Problems; References; Chapter 13 | ||
| 500 | |a - Alternative Lithography Techniques; 13.1 Proximity X-ray Lithography; 13.2 Electron-Beam Direct-Write Lithography; 13.2.1 Single-beam direct-write systems; 13.2.2 Multiple-electron-beam direct-write systems; 13.2.3 Cell-projection lithography; 13.2.4 Scattering-mask electron-projection lithography; 13.3 Ion-Projection Lithography; 13.4 Imprint Lithography; 13.5 Directed Self-Assembly; Problems; References; Appendix A Coherence; Problems; References | ||
| 650 | 4 | |a bicssc / Electronics engineering | |
| 650 | 4 | |a bicssc / Circuits & components | |
| 650 | 4 | |a bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics | |
| 650 | 4 | |a bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated | |
| 650 | 4 | |a bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General | |
| 650 | 4 | |a Microlithography | |
| 650 | 4 | |a Integrated circuits - Design and construction | |
| 650 | 0 | 7 | |a Lithografie |g Halbleitertechnologie |0 (DE-588)4191584-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Lithografie |g Halbleitertechnologie |0 (DE-588)4191584-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, PDF |z 978-1-5106-2761-1 |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe, EPUB |z 978-1-5106-2762-8 |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-031442912 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804180337664720896 |
|---|---|
| any_adam_object | |
| author | Levinson, Harry J. |
| author_facet | Levinson, Harry J. |
| author_role | aut |
| author_sort | Levinson, Harry J. |
| author_variant | h j l hj hjl |
| building | Verbundindex |
| bvnumber | BV046061597 |
| ctrlnum | (OCoLC)1120920280 (DE-599)BVBBV046061597 |
| edition | Fourth edition |
| format | Book |
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| id | DE-604.BV046061597 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:34:10Z |
| institution | BVB |
| isbn | 9781510627604 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031442912 |
| oclc_num | 1120920280 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | xvi, 571 pages illustrations |
| publishDate | 2019 |
| publishDateSearch | 2019 |
| publishDateSort | 2019 |
| publisher | SPIE Press |
| record_format | marc |
| spelling | Levinson, Harry J. Verfasser aut Principles of Lithography Harry J. Levinson Fourth edition Bellingham, Washington, USA SPIE Press [2019] xvi, 571 pages illustrations txt rdacontent n rdamedia nc rdacarrier Chapter 1 Overview of Lithography; Problems; Chapter 2 Optical Pattern Formation; 2.1 The Problem of Imaging; 2.2 Aerial Images; 2.3 The Contributions of Physics and Chemistry; 2.4 Focus; Problems; References; Chapter 3 Photoresists; 3.1 Positive and Negative Resists; 3.2 Adhesion Promotion; 3.3 Resist Spin Coating, Softbake, - and Hardbake; 3.4 Photochemistry of Novolak/DNQ g- and i-line Resists; 3.5 Acid-Catalyzed DUV Resists; 3.6 Development and Post-Exposure Bakes; 3.7 Operational Characterization; 3.8 Line-Edge Roughness; 3.9 Multilayer Resist Processes; Problems; References; Chapter 4 Modeling and Thin-Film Effects; 4.1 Models of Optical Imaging; 4.2 Aberrations; 4.3 Modeling Photochemical Reactions; 4.4 Thin-Film Optical Effects; 4.5 Post-Exposure Bakes; 4.6 Methods for Addressing the Problems of Reflective Substrates; 4.7 Development; 4.8 Quantum Effects and Modeling; 4.9 Summary of Modeling; Problems; References; Chapter 5 Wafer Steppers and Scanners; 5.1 Overview; 5.2 Light Sources; 5.3 Illumination Systems; 5.4 Reduction Lenses; 5.5 Autofocus Systems; 5.6 The Wafer Stage; 5.7 Scanning; 5.8 Dual-Stage Exposure Tools; 5.9 Lithography Exposure Tools before Steppers; Problems; References; Chapter 6 Overlay; 6.1 Alignment Systems; 6.1.1 Classification of alignment systems; 6.1.2 Optical - methods for alignment and wafer-to-reticle referencing; 6.1.3 Number of alignment marks; 6.2 Overlay Models; 6.3 Matching; 6.4 Process-Dependent Overlay Effects; Problems; References; Chapter 7 Masks and Reticles; 7.1 Overview; 7.2 Mask Blanks; 7.3 Mechanical Optical-Pattern Generators; 7.4 Electron-Beam Lithography and Single-Beam Mask Writers; 7.5 Multi-Electron-Beam Mask Writers; 7.6 Optical Mask Writers; 7.7 Resists for Mask Making; 7.8 Etching; 7.9 Pellicles; 7.10 Mask-Defect Inspection and Repair; Problems; References; Chapter 8 Confronting the Diffraction Limit; 8.1 Off-Axis Illumination; 8.2 Optical Proximity Effects; 8.3 The Mask-Error Enhancement Factor (MEEF); 8.4 Phase-Shifting Masks; 8.5 Putting It All Together; Problems; References; Chapter 9 Metrology; 9.1 Linewidth Measurement; 9.1.1 Linewidth measurement using scanning electron microscopes; 9.1.2 Scatterometry; 9.1.3 Electrical linewidth measurement; 9.2 Measurement of Overlay; Problems; - References; Chapter 10 Immersion Lithography and the Limits of Optical Lithography; 10.1 Immersion Lithography; 10.2 The Diffraction Limit; 10.3 Improvements in Optics; 10.4 Maximum Numerical Aperture; 10.5 The Shortest Wavelength; 10.6 Improved Photoresists; 10.7 Flatter Wafers; 10.8 How Low Can k1 Go?; 10.9 How Far Can Optical Lithography Be Extended?; 10.10 Multiple Patterning; 10.11 Interferometric Lithography; Problems; References; Chapter 11 Lithography Costs; 11.1 Cost-of-Ownership; 11.1.1 Capital costs; 11.1.2 Consumables; 11.1.3 Mask costs; 11.1.4 Rework; 11.1.5 Metrology; 11.1.6 Maintenance costs; 11.1.7 Labor costs; 11.1.8 Facilities costs; 11.2 Mix-and-Match Strategies; Problems; References; Chapter 12 Extreme Ultraviolet Lithography; 12.1 Background and Multilayer Reflectors; 12.2 EUV Lithography System Overview; 12.3 EUV Masks; 12.4 Sources and Illuminators; 12.5 EUV Optics; 12.6 EUV Resists; Problems; References; Chapter 13 - Alternative Lithography Techniques; 13.1 Proximity X-ray Lithography; 13.2 Electron-Beam Direct-Write Lithography; 13.2.1 Single-beam direct-write systems; 13.2.2 Multiple-electron-beam direct-write systems; 13.2.3 Cell-projection lithography; 13.2.4 Scattering-mask electron-projection lithography; 13.3 Ion-Projection Lithography; 13.4 Imprint Lithography; 13.5 Directed Self-Assembly; Problems; References; Appendix A Coherence; Problems; References bicssc / Electronics engineering bicssc / Circuits & components bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Microlithography Integrated circuits - Design and construction Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd rswk-swf Lithografie Halbleitertechnologie (DE-588)4191584-7 s 1\p DE-604 Erscheint auch als Online-Ausgabe, PDF 978-1-5106-2761-1 Erscheint auch als Online-Ausgabe, EPUB 978-1-5106-2762-8 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Levinson, Harry J. Principles of Lithography bicssc / Electronics engineering bicssc / Circuits & components bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Microlithography Integrated circuits - Design and construction Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd |
| subject_GND | (DE-588)4191584-7 |
| title | Principles of Lithography |
| title_auth | Principles of Lithography |
| title_exact_search | Principles of Lithography |
| title_full | Principles of Lithography Harry J. Levinson |
| title_fullStr | Principles of Lithography Harry J. Levinson |
| title_full_unstemmed | Principles of Lithography Harry J. Levinson |
| title_short | Principles of Lithography |
| title_sort | principles of lithography |
| topic | bicssc / Electronics engineering bicssc / Circuits & components bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Microlithography Integrated circuits - Design and construction Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd |
| topic_facet | bicssc / Electronics engineering bicssc / Circuits & components bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Microlithography Integrated circuits - Design and construction Lithografie Halbleitertechnologie |
| work_keys_str_mv | AT levinsonharryj principlesoflithography |