An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors:
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Hauptverfasser: | , , , , |
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Format: | Elektronisch E-Book |
Sprache: | English |
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Erlangen
Friedrich-Alexander-Universität Erlangen-Nürnberg
2019
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Online-Zugang: | Volltext Volltext Volltext |
Beschreibung: | 1 Online-Ressource |
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author | Hauck, Martin Lehmeyer, Johannes Pobegen, Gregor Weber, Heiko B. Krieger, Michael |
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spelling | Hauck, Martin Verfasser aut An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger Erlangen Friedrich-Alexander-Universität Erlangen-Nürnberg 2019 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager Characterization and analytical techniques Condensed-matter physics Lehmeyer, Johannes Verfasser aut Pobegen, Gregor Verfasser aut Weber, Heiko B. Verfasser aut Krieger, Michael Verfasser aut Sonderdruck aus Communications Physics Vol. 2 (2019) 10.1038/s42005-018-0102-8 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-110558 Resolving-System kostenfrei Volltext http://d-nb.info/1186381795/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext https://open.fau.de/handle/openfau/11055 Verlag kostenfrei Volltext |
spellingShingle | Hauck, Martin Lehmeyer, Johannes Pobegen, Gregor Weber, Heiko B. Krieger, Michael An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
title | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
title_auth | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
title_exact_search | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
title_full | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger |
title_fullStr | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger |
title_full_unstemmed | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger |
title_short | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
title_sort | an adapted method for analyzing 4h silicon carbide metal oxide semiconductor field effect transistors |
url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-110558 http://d-nb.info/1186381795/34 https://open.fau.de/handle/openfau/11055 |
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