Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
Springer Singapore
2018
Singapore Springer |
| Schriftenreihe: | Springer Theses, Recognizing Outstanding Ph.D. Research
|
| Schlagworte: | |
| Online-Zugang: | TUM01 UBM01 UBT01 UER01 Volltext |
| Beschreibung: | 1 Online-Ressource (XV, 102 p. 68 illus., 57 illus. in color) |
| ISBN: | 9789811334443 |
| ISSN: | 2190-5053 |
| DOI: | 10.1007/978-981-13-3444-3 |
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Datensatz im Suchindex
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| discipline | Physik |
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| id | DE-604.BV045913248 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:30:10Z |
| institution | BVB |
| isbn | 9789811334443 |
| issn | 2190-5053 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031295784 |
| oclc_num | 1104901353 |
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| physical | 1 Online-Ressource (XV, 102 p. 68 illus., 57 illus. in color) |
| psigel | ZDB-2-PHA ZDB-2-PHA_2018_Fremddaten |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| publisher | Springer Singapore Springer |
| record_format | marc |
| series2 | Springer Theses, Recognizing Outstanding Ph.D. Research |
| spelling | Fu, Mengqi Verfasser aut Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by Mengqi Fu Singapore Springer Singapore 2018 Singapore Springer 1 Online-Ressource (XV, 102 p. 68 illus., 57 illus. in color) txt rdacontent c rdamedia cr rdacarrier Springer Theses, Recognizing Outstanding Ph.D. Research 2190-5053 Nanoscale Science and Technology Nanotechnology and Microengineering Semiconductors Characterization and Evaluation of Materials Electronic Circuits and Devices Optical and Electronic Materials Engineering Surfaces (Physics) Optical materials Erscheint auch als Druck-Ausgabe 978-981-133-443-6 Erscheint auch als Druck-Ausgabe 978-981-133-445-0 https://doi.org/10.1007/978-981-13-3444-3 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Fu, Mengqi Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors Nanoscale Science and Technology Nanotechnology and Microengineering Semiconductors Characterization and Evaluation of Materials Electronic Circuits and Devices Optical and Electronic Materials Engineering Surfaces (Physics) Optical materials |
| title | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| title_auth | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| title_exact_search | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| title_full | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by Mengqi Fu |
| title_fullStr | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by Mengqi Fu |
| title_full_unstemmed | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by Mengqi Fu |
| title_short | Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors |
| title_sort | electrical properties of indium arsenide nanowires and their field effect transistors |
| topic | Nanoscale Science and Technology Nanotechnology and Microengineering Semiconductors Characterization and Evaluation of Materials Electronic Circuits and Devices Optical and Electronic Materials Engineering Surfaces (Physics) Optical materials |
| topic_facet | Nanoscale Science and Technology Nanotechnology and Microengineering Semiconductors Characterization and Evaluation of Materials Electronic Circuits and Devices Optical and Electronic Materials Engineering Surfaces (Physics) Optical materials |
| url | https://doi.org/10.1007/978-981-13-3444-3 |
| work_keys_str_mv | AT fumengqi electricalpropertiesofindiumarsenidenanowiresandtheirfieldeffecttransistors |