Ga-As-based nanowire lasers on silicon - growth and optical investigations:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V.
Februar 2019
|
| Ausgabe: | 1. Auflage |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
220 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | IX, 230 Seiten Illustrationen, Diagramme 21 cm |
| ISBN: | 9783946379201 3946379206 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV045866198 | ||
| 003 | DE-604 | ||
| 005 | 20190617 | ||
| 007 | t | ||
| 008 | 190508s2019 gw a||| m||| 00||| eng d | ||
| 015 | |a 19,N12 |2 dnb | ||
| 016 | 7 | |a 1180412346 |2 DE-101 | |
| 020 | |a 9783946379201 |c Broschur : EUR 18.00 (DE), EUR 18.50 (AT) |9 978-3-946379-20-1 | ||
| 020 | |a 3946379206 |9 3-946379-20-6 | ||
| 024 | 3 | |a 9783946379201 | |
| 035 | |a (OCoLC)1101132679 | ||
| 035 | |a (DE-599)DNB1180412346 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BY | ||
| 049 | |a DE-12 |a DE-91 |a DE-83 | ||
| 084 | |a ELT 300d |2 stub | ||
| 084 | |a 530 |2 sdnb | ||
| 084 | |a PHY 685d |2 stub | ||
| 100 | 1 | |a Stettner, Thomas |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Ga-As-based nanowire lasers on silicon - growth and optical investigations |c Thomas Stettner |
| 250 | |a 1. Auflage | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V. |c Februar 2019 | |
| 300 | |a IX, 230 Seiten |b Illustrationen, Diagramme |c 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Selected topics of semiconductor physics and technology |v 220 | |
| 502 | |b Dissertation |c Technische Universität München |d 2019 | ||
| 653 | |a Laser | ||
| 653 | |a Nanowire | ||
| 653 | |a Silicon photonics | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 710 | 2 | |a Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München |0 (DE-588)1064060455 |4 pbl | |
| 856 | 4 | 2 | |m B:DE-101 |q application/pdf |u http://d-nb.info/1180412346/04 |3 Inhaltsverzeichnis |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031249590&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-031249590 | ||
Datensatz im Suchindex
| _version_ | 1804180007057096704 |
|---|---|
| adam_text | CONTENTS
ABSTRACT
I
KURZFASSUNG
III
1.
INTRODUCTION
AND
BACKGROUND
1
1.1.
INTRODUCTION
.......................................................................................
1
1.2.
THEORETICAL
BACKGROUND
....................................................................
6
1.2.1.
CARRIER
GENERATION
AND
RECOMBINATION
...............................
6
1.2.2.
LASING
CONDITIONS
.................................................................
10
1.2.3.
NUMERICAL
MODELING
AND
OPTICAL
MODES
............................
19
2.
FABRICATION
AND
ANALYSIS
METHODS
33
2.1.
MOLECULAR
BEAM
EPITAXY
.................................................................
33
2.1.1.
SUBSTRATE
PREPARATION
........................................................
36
2.1.2.
NW
CORE
GROWTH
.................................................................
38
2.1.3.
CORE-SHELL
HETEROSTRUCTURES
.................................................
41
2.2.
STRUCTURAL
ANALYSIS
METHODS
...........................................................
43
2.3.
OPTICAL
CHARACTERIZATION
.................................................................
50
2.3.1.
PREPARATION
OF
NW
LASERS
IN
LYING
GEOMETRY
....................
50
2.3.2.
MICRO-PHOTOLUMINESCENCE
SPECTROSCOPY
............................
51
2.3.3.
TIME-RESOLVED
PHOTOLUMINESCENCE
SPECTROSCOPY
...............
56
3.
COUPLING
OF
LASING
EMISSION
TO
WAVEGUIDES
59
3.1.
INTEGRATED
SILICON
PHOTONICS
-
STATE
OF
THE
ART
...............................
60
3.2.
FDTD
SIMULATIONS
..........................................................................
62
3.3.
GROWTH
OF
NW
LASERS
ON
SI
WAVEGUIDES
........................................
63
3.3.1.
DOSE
TEST
ON
SOI
SUBSTRATES
..............................................
65
3.3.2.
SHELL
GROWTH
TEMPERATURE
OPTIMIZATION
............................
67
3.4.
LASING
EMISSION
OF
INTEGRATED
NWS
..............................................
69
VII
3.5.
COUPLING
OF
LASING
EMISSION
TO
SI
WAVEGUIDE
...............................
72
3.5.1.
INTRINSIC
CLUSTER
EMISSION
.....................................................
74
3.5.2.
SPECTRALLY
RESOLVED
COUPLING
MECHANISM
............................
75
3.5.3.
PREDOMINANT
COUPLING
OF
STIMULATED
EMISSION
...................
77
3.6.
FDTD
SIMULATIONS
WITH
REAL
DIMENSIONS
.....................................
78
3.7.
ATTENUATION
BEHAVIOR
.......................................................................
80
3.8.
SUMMARY
AND
CONCLUSION
.................................................................
83
4.
TUNING
OF
LASING
EMISSION
BY
EPITAXIAL
GAIN
CONTROL
85
4.1.
INGAAS
NANOWIRES
.............................................................................
87
4.1.1.
GROWTH
OF
INGAAS
CORES
.....................................................
87
4.1.2.
GROWTH
OF
INGAAS
SHELLS
.....................................................
91
4.2.
GAAS-ALGAAS
CORE-MULTISHELL
NANOWIRE
LASERS
............................
93
4.2.1.
DESIGN
OF
QW
NANOWIRE
LASER
...........................................
94
4.2.2.
GROWTH
.................................................................................
108
4.2.3.
STRUCTURAL
ANALYSIS
..............................................................
109
4.2.4.
OPTICAL
STUDIES
....................................................................
ILL
4.2.5.
SUMMARY
AND
CONCLUSION
.....................................................
132
4.3.
GAAS-(IN
,
AL)GAAS
CORE-MULTISHELL
NANOWIRE
LASERS
.......................
135
4.3.1.
DESIGN
OF
INGAAS
MQW
NANOWIRE
LASER
............................
136
4.3.2.
GROWTH
................................................................................
138
4.3.3.
STRUCTURAL
ANALYSIS
..............................................................
139
4.3.4.
OPTICAL
STUDIES
....................................................................
142
4.3.5.
CORRELATED
STEM
AND
APT
STUDIES
...................................
149
4.3.6.
SUMMARY
AND
CONCLUSION
.....................................................
162
5.
CONCLUSION
AND
OUTLOOK
163
5.1.
OUTLOOK
............................................................................................
166
5.1.1.
STRAIN
ENGINEERING
.................................................................
166
5.1.2.
ELECTRICAL
INJECTION
..............................................................
167
A.
APPENDIX
CHAPTER
169
B.
LIST
OF
SAMPLES
185
BIBLIOGRAPHY
191
LIST
OF
FIGURES
219
VIII
LIST
OF
PUBLICATIONS
223
ACKNOWLEDGMENTS
227
IX
|
| any_adam_object | 1 |
| author | Stettner, Thomas |
| author_facet | Stettner, Thomas |
| author_role | aut |
| author_sort | Stettner, Thomas |
| author_variant | t s ts |
| building | Verbundindex |
| bvnumber | BV045866198 |
| classification_tum | ELT 300d PHY 685d |
| ctrlnum | (OCoLC)1101132679 (DE-599)DNB1180412346 |
| discipline | Physik Elektrotechnik |
| edition | 1. Auflage |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01960nam a2200469 cb4500</leader><controlfield tag="001">BV045866198</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20190617 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">190508s2019 gw a||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">19,N12</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1180412346</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783946379201</subfield><subfield code="c">Broschur : EUR 18.00 (DE), EUR 18.50 (AT)</subfield><subfield code="9">978-3-946379-20-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3946379206</subfield><subfield code="9">3-946379-20-6</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783946379201</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1101132679</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1180412346</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BY</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 300d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 685d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Stettner, Thomas</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ga-As-based nanowire lasers on silicon - growth and optical investigations</subfield><subfield code="c">Thomas Stettner</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Auflage</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Garching</subfield><subfield code="b">Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V.</subfield><subfield code="c">Februar 2019</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IX, 230 Seiten</subfield><subfield code="b">Illustrationen, Diagramme</subfield><subfield code="c">21 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">220</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Technische Universität München</subfield><subfield code="d">2019</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Laser</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Nanowire</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Silicon photonics</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München</subfield><subfield code="0">(DE-588)1064060455</subfield><subfield code="4">pbl</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">B:DE-101</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://d-nb.info/1180412346/04</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031249590&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-031249590</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV045866198 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:28:54Z |
| institution | BVB |
| institution_GND | (DE-588)1064060455 |
| isbn | 9783946379201 3946379206 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031249590 |
| oclc_num | 1101132679 |
| open_access_boolean | |
| owner | DE-12 DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-12 DE-91 DE-BY-TUM DE-83 |
| physical | IX, 230 Seiten Illustrationen, Diagramme 21 cm |
| publishDate | 2019 |
| publishDateSearch | 2019 |
| publishDateSort | 2019 |
| publisher | Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V. |
| record_format | marc |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Stettner, Thomas Verfasser aut Ga-As-based nanowire lasers on silicon - growth and optical investigations Thomas Stettner 1. Auflage Garching Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V. Februar 2019 IX, 230 Seiten Illustrationen, Diagramme 21 cm txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 220 Dissertation Technische Universität München 2019 Laser Nanowire Silicon photonics (DE-588)4113937-9 Hochschulschrift gnd-content Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München (DE-588)1064060455 pbl B:DE-101 application/pdf http://d-nb.info/1180412346/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031249590&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Stettner, Thomas Ga-As-based nanowire lasers on silicon - growth and optical investigations |
| subject_GND | (DE-588)4113937-9 |
| title | Ga-As-based nanowire lasers on silicon - growth and optical investigations |
| title_auth | Ga-As-based nanowire lasers on silicon - growth and optical investigations |
| title_exact_search | Ga-As-based nanowire lasers on silicon - growth and optical investigations |
| title_full | Ga-As-based nanowire lasers on silicon - growth and optical investigations Thomas Stettner |
| title_fullStr | Ga-As-based nanowire lasers on silicon - growth and optical investigations Thomas Stettner |
| title_full_unstemmed | Ga-As-based nanowire lasers on silicon - growth and optical investigations Thomas Stettner |
| title_short | Ga-As-based nanowire lasers on silicon - growth and optical investigations |
| title_sort | ga as based nanowire lasers on silicon growth and optical investigations |
| topic_facet | Hochschulschrift |
| url | http://d-nb.info/1180412346/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=031249590&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT stettnerthomas gaasbasednanowirelasersonsilicongrowthandopticalinvestigations AT vereinzurforderungdeswalterschottkyinstitutsdertechnischenuniversitatmunchen gaasbasednanowirelasersonsilicongrowthandopticalinvestigations |
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