Holdings: GaN-based Tri-gate high electron mobility transistors

GaN-based Tri-gate high electron mobility transistors:

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Bibliographic Details
Main Author:	Ture, Erdin (Author)
Corporate Author:	Albert-Ludwigs-Universität Freiburg Institut für Mikrosystemtechnik (Contributor)
Format:	Thesis Electronic eBook
Language:	English
Published:	Freiburg 2016
Subjects:	Multigate-Transistor Mesa-Technik Galliumnitrid Millimeterwellentechnik Leistungsverstärker HEMT Leistungssteigerung Hochfrequenzleistungstransistor Hochschulschrift
Online Access:	Volltext Volltext
Item Description:	IN COPYRIGHT http://rightsstatements.org/page/InC/1.0 rs
Physical Description:	Online-Ressource

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MARC


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Record in the Search Index

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any_adam_object
author	Ture, Erdin
author_GND	(DE-588)1139712209 (DE-588)129928631
author_corporate	Albert-Ludwigs-Universität Freiburg Institut für Mikrosystemtechnik
author_corporate_role	ctb
author_facet	Ture, Erdin Albert-Ludwigs-Universität Freiburg Institut für Mikrosystemtechnik
author_role	aut
author_sort	Ture, Erdin
author_variant	e t et
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bvnumber	BV045531751
classification_rvk	ZN 4870
collection	ebook
ctrlnum	(OCoLC)1017037885 (DE-599)DNB1143602811
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Thesis Electronic eBook
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spelling	Ture, Erdin Verfasser (DE-588)1139712209 aut GaN-based Tri-gate high electron mobility transistors Freiburg 2016 Online-Ressource txt rdacontent c rdamedia cr rdacarrier IN COPYRIGHT http://rightsstatements.org/page/InC/1.0 rs Dissertation Albert-Ludwigs-Universität Freiburg 2016 Multigate-Transistor (DE-588)1054435278 gnd rswk-swf Mesa-Technik (DE-588)4550610-3 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Millimeterwellentechnik (DE-588)4169986-5 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Leistungssteigerung (DE-588)4167306-2 gnd rswk-swf Hochfrequenzleistungstransistor (DE-588)4160142-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumnitrid (DE-588)4375592-6 s Hochfrequenzleistungstransistor (DE-588)4160142-7 s HEMT (DE-588)4211873-6 s DE-604 Millimeterwellentechnik (DE-588)4169986-5 s Multigate-Transistor (DE-588)1054435278 s Mesa-Technik (DE-588)4550610-3 s Leistungssteigerung (DE-588)4167306-2 s Leistungsverstärker (DE-588)4129735-0 s Ambacher, Oliver 1963- (DE-588)129928631 dgs Albert-Ludwigs-Universität Freiburg Institut für Mikrosystemtechnik (DE-588)10090784-2 ctb Fraunhofer-Institut für Angewandte Festkörperphysik (DE-588)2077665-2 oth Albert-Ludwigs-Universität Freiburg Fakultät für Angewandte Wissenschaften (DE-588)5299644-X dgg https://nbn-resolving.org/urn:nbn:de:bsz:25-freidok-130551 Resolving-System kostenfrei Volltext application/pdf https://freidok.uni-freiburg.de/data/13055 Verlag kostenfrei Volltext
spellingShingle	Ture, Erdin GaN-based Tri-gate high electron mobility transistors Multigate-Transistor (DE-588)1054435278 gnd Mesa-Technik (DE-588)4550610-3 gnd Galliumnitrid (DE-588)4375592-6 gnd Millimeterwellentechnik (DE-588)4169986-5 gnd Leistungsverstärker (DE-588)4129735-0 gnd HEMT (DE-588)4211873-6 gnd Leistungssteigerung (DE-588)4167306-2 gnd Hochfrequenzleistungstransistor (DE-588)4160142-7 gnd
subject_GND	(DE-588)1054435278 (DE-588)4550610-3 (DE-588)4375592-6 (DE-588)4169986-5 (DE-588)4129735-0 (DE-588)4211873-6 (DE-588)4167306-2 (DE-588)4160142-7 (DE-588)4113937-9
title	GaN-based Tri-gate high electron mobility transistors
title_auth	GaN-based Tri-gate high electron mobility transistors
title_exact_search	GaN-based Tri-gate high electron mobility transistors
title_full	GaN-based Tri-gate high electron mobility transistors
title_fullStr	GaN-based Tri-gate high electron mobility transistors
title_full_unstemmed	GaN-based Tri-gate high electron mobility transistors
title_short	GaN-based Tri-gate high electron mobility transistors
title_sort	gan based tri gate high electron mobility transistors
topic	Multigate-Transistor (DE-588)1054435278 gnd Mesa-Technik (DE-588)4550610-3 gnd Galliumnitrid (DE-588)4375592-6 gnd Millimeterwellentechnik (DE-588)4169986-5 gnd Leistungsverstärker (DE-588)4129735-0 gnd HEMT (DE-588)4211873-6 gnd Leistungssteigerung (DE-588)4167306-2 gnd Hochfrequenzleistungstransistor (DE-588)4160142-7 gnd
topic_facet	Multigate-Transistor Mesa-Technik Galliumnitrid Millimeterwellentechnik Leistungsverstärker HEMT Leistungssteigerung Hochfrequenzleistungstransistor Hochschulschrift
url	https://nbn-resolving.org/urn:nbn:de:bsz:25-freidok-130551 https://freidok.uni-freiburg.de/data/13055
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