APA (7th ed.) Citation

Ture, E. (2016). GaN-based Tri-gate high electron mobility transistors.

Chicago Style (17th ed.) Citation

Ture, Erdin. GaN-based Tri-gate High Electron Mobility Transistors. Freiburg, 2016.

MLA (9th ed.) Citation

Ture, Erdin. GaN-based Tri-gate High Electron Mobility Transistors. 2016.

Warning: These citations may not always be 100% accurate.