GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Göttingen
Cuvillier Verlag
2018
|
| Ausgabe: | 1. Auflage |
| Schriftenreihe: | Innovationen mit Mikrowellen und Licht
Band 46 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | 137 Seiten Illustrationen 21 cm |
| ISBN: | 9783736999060 3736999062 |
Internformat
MARC
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| 100 | 1 | |a Luo, Peng |d 1987- |e Verfasser |0 (DE-588)1177155532 |4 aut | |
| 245 | 1 | 0 | |a GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements |c Peng Luo |
| 250 | |a 1. Auflage | ||
| 264 | 1 | |a Göttingen |b Cuvillier Verlag |c 2018 | |
| 300 | |a 137 Seiten |b Illustrationen |c 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Innovationen mit Mikrowellen und Licht |v Band 46 | |
| 502 | |b Dissertation |c Brandenburgische Technische Universität Cottbus-Senftenberg |d 2018 | ||
| 650 | 0 | 7 | |a Haftstelle |0 (DE-588)4246560-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drain |g Elektronik |0 (DE-588)4268287-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gitterbaufehler |0 (DE-588)4125030-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Source |g Elektronik |0 (DE-588)4268290-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Streumatrix |g Elektrotechnik |0 (DE-588)4213728-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a HEMT |0 (DE-588)4211873-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
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| 650 | 0 | 7 | |a Großsignalverhalten |0 (DE-588)4158301-2 |2 gnd |9 rswk-swf |
| 653 | |a A1GAN/GaN | ||
| 653 | |a Abbreviations | ||
| 653 | |a Capacitances | ||
| 653 | |a Circuit | ||
| 653 | |a Conductance Match | ||
| 653 | |a Device | ||
| 653 | |a Drain-Lag | ||
| 653 | |a Extraction | ||
| 653 | |a Extrinsic | ||
| 653 | |a GaN Hemt | ||
| 653 | |a Gate-Lag | ||
| 653 | |a Ham | ||
| 653 | |a Intrinsic | ||
| 653 | |a Large-Signal Model Types | ||
| 653 | |a Large-signal | ||
| 653 | |a Load Pull Performance | ||
| 653 | |a Mechanism | ||
| 653 | |a Model Limitations | ||
| 653 | |a Modeling | ||
| 653 | |a Nonlinear | ||
| 653 | |a Outline of the Thesis | ||
| 653 | |a Output | ||
| 653 | |a Parameter | ||
| 653 | |a Physical | ||
| 653 | |a Published Models | ||
| 653 | |a Pulsed Measurements | ||
| 653 | |a Reduction | ||
| 653 | |a Self-Heating | ||
| 653 | |a Trapping Effects | ||
| 653 | |a Traps Isolation | ||
| 653 | |a Verification | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a HEMT |0 (DE-588)4211873-6 |D s |
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| 689 | 0 | 6 | |a Streumatrix |g Elektrotechnik |0 (DE-588)4213728-7 |D s |
| 689 | 0 | 7 | |a Großsignalverhalten |0 (DE-588)4158301-2 |D s |
| 689 | 0 | |5 DE-604 | |
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| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030906603&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030906603 | ||
Datensatz im Suchindex
| _version_ | 1804179474583912448 |
|---|---|
| adam_text | CONTENTS
1 INTRODUCTION 1
1.1 LARGE-SIGNAL MODEL T Y P E S
................................................................. 2
1.2 GAN HEMT MODELING C H ALLEN G ES
.....................................................
3
1.3 OUTLINE OF THE T H E S I S
..........................................................................
5
2 GAN HEMT MODELING STRATEGY 7
2.1 ALGAN/GAN H EM
T..............................................................................
8
2.1.1 ALGAN/GAN HEMT S TRU C TU RE
............................................... 8
2.1.2 BASIC ALGAN/GAN HEMT OPERATION
...................................
9
2.2 GAN HEMT SMALL-SIGNAL M O D ELIN G
..................................................
10
2.2.1 EXTRINSIC PARAMETER E
XTRACTION............................................... 11
2.2.2 INTRINSIC PARAMETERS
EXTRACTION............................................... 18
2.3 GAN HEMT LARGE-SIGNAL M O D E LIN G
.................................................. 21
2.3.1 NONLINEAR CIRCUIT M O D E LIN G
..................................................
22
2.3.2 LARGE-SIGNAL CAPACITANCES
MODELING...................................... 25
2.4 TRAPPING EFFECTS IN GAN H E M T S
........................................................
32
2.4.1 PHYSICAL MECHANISMS OF TRAPPING E FFE C TS
.............................
32
2.4.2 GATE-LAG E FFE C TS
..................................................................... 34
2.4.3 DRAIN-LAG
EFFECTS.....................................................................
36
2.4.4 OVERVIEW OF THE PUBLISHED M
ODELS......................................... 39
3 PULSED S-PARAMETER MEASUREMENTS 45
3.1 PRINCIPLE OF PULSED M EASUREM ENTS
.....................................................
46
3.2 PULSED S-PARAMETER MEASUREMENT TEST B E N C H
..................................
48
3.3 PULSED MEASUREMENT C HARACTERISTICS
..................................................
49
3.3.1 DEVICE SELF-HEATING REDUCTION
............................................. 49
3.3.2 TRAPS ISOLATION
52
4 GAN HEMT MODELING BASED ON PULSED S-PARAMETER MEASUREMENTS 55
4.1 SMALL-SIGNAL M O D ELIN G
........................................................................
56
4.1.1 EXTRINSIC P ARAM
ETERS............................................................... 56
4.1.2 INTRINSIC PARAMETERS
............................................................... 60
4.1.3 SMALL-SIGNAL MODEL VERIFICATION
............................................
63
4.2 LARGE-SIGNAL M O D ELIN G
........................................................................
65
4.2.1 DRAIN-SOURCE CURRENT MODEL PARAMETERS
...............................
66
4.2.2 CAPACITANCE MODEL PARAM ETERS
...............................................
68
4.3 LARGE SIGNAL MODEL V
ERIFICATION......................................................... 70
4.3.1 I/V C H
ARACTERISTICS..................................................................
70
4.3.2 S-P ARAM ETERS
...........................................................................
72
4.3.3 LOAD-PULL
PERFORMANCE............................................................
74
4.4 C
ONCLUSIONS...........................................................................................
76
5 PARAMETER-SCALING DRAIN-LAG MODEL 77
5.1 LARGE-SIGNAL MODEL E X TE N D IN G
............................................................ 78
5.1.1 EXTENDING THE LARGE-SIGNAL M O D E
L......................................... 78
5.1.2 MODELS WITH SCALED PARAMETERS VERIFICATION
.........................
80
5.2 DRAIN-LAG MODEL BASED ON SCALED P A RA M E TE
RS................................... 84
5.2.1 MODEL D E SCRIP TIO N
.................................................................. 84
5.2.2 MODEL PARAMETER E X TRA C TIO N
..................................................
88
5.2.3 MODEL V
ERIFICATION..................................................................
88
5.3 DISCUSSION OF MODEL L IM
ITATIONS......................................................... 93
5.4 C
ONCLUSIONS...........................................................................................
95
6 COMBINED DRAIN-LAG MODEL 97
6.1 MODEL DEVELOPMENT
............................................................................
97
6.1.1 DEVELOPED LARGE-SIGNAL MODEL T O P OLOGY
............................
98
6.1.2 OUTPUT CONDUCTANCE MATCH
.....................................................100
6.2 MODEL PARAMETER EXTRACTION
..................................................................101
6.3 MODEL VERIFICATION
.................................................................................
104
6.3.1 PULSED I/V C H ARACTERISTICS
........................................................
104
6.3.2 PULSED S -P ARAM
ETERS..................................................................106
6.3.3 LOAD-PULL PERFORMANCE
..............................................................
107
6.3.4 LOW-FREQUENCY LARGE-SIGNAL B E H A V IO R
...................................
109
6.4 CONCLUSION
...............................................................................................I
L L
7 GENERAL CONCLUSIONS AND FUTURE WORK 113
7.1 KEY RESEARCH RE SU
LTS..............................................................................
113
7.2 FUTURE W O R K S
..........................................................................................
116
A /^-RELATED PARAMETERS 117
B CLASSICAL CAPACITANCES AND TRANSCAPACITANCES 119
C LIST OF SYMBOLS 121
D LIST OF ABBREVIATIONS AND ACRONYMS 123
|
| any_adam_object | 1 |
| author | Luo, Peng 1987- |
| author_GND | (DE-588)1177155532 |
| author_facet | Luo, Peng 1987- |
| author_role | aut |
| author_sort | Luo, Peng 1987- |
| author_variant | p l pl |
| building | Verbundindex |
| bvnumber | BV045522326 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)1091701583 (DE-599)DNB1175307211 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. Auflage |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV045522326 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:20:27Z |
| institution | BVB |
| institution_GND | (DE-588)1067137041 |
| isbn | 9783736999060 3736999062 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030906603 |
| oclc_num | 1091701583 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | 137 Seiten Illustrationen 21 cm |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| publisher | Cuvillier Verlag |
| record_format | marc |
| series | Innovationen mit Mikrowellen und Licht |
| series2 | Innovationen mit Mikrowellen und Licht |
| spelling | Luo, Peng 1987- Verfasser (DE-588)1177155532 aut GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements Peng Luo 1. Auflage Göttingen Cuvillier Verlag 2018 137 Seiten Illustrationen 21 cm txt rdacontent n rdamedia nc rdacarrier Innovationen mit Mikrowellen und Licht Band 46 Dissertation Brandenburgische Technische Universität Cottbus-Senftenberg 2018 Haftstelle (DE-588)4246560-6 gnd rswk-swf Drain Elektronik (DE-588)4268287-3 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Source Elektronik (DE-588)4268290-3 gnd rswk-swf Streumatrix Elektrotechnik (DE-588)4213728-7 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Tiefe Störstelle (DE-588)4185419-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Großsignalverhalten (DE-588)4158301-2 gnd rswk-swf A1GAN/GaN Abbreviations Capacitances Circuit Conductance Match Device Drain-Lag Extraction Extrinsic GaN Hemt Gate-Lag Ham Intrinsic Large-Signal Model Types Large-signal Load Pull Performance Mechanism Model Limitations Modeling Nonlinear Outline of the Thesis Output Parameter Physical Published Models Pulsed Measurements Reduction Self-Heating Trapping Effects Traps Isolation Verification (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Galliumnitrid (DE-588)4375592-6 s Haftstelle (DE-588)4246560-6 s Tiefe Störstelle (DE-588)4185419-6 s Drain Elektronik (DE-588)4268287-3 s Source Elektronik (DE-588)4268290-3 s Streumatrix Elektrotechnik (DE-588)4213728-7 s Großsignalverhalten (DE-588)4158301-2 s DE-604 Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s Eric Cuvillier (Firma) (DE-588)1067137041 pbl Erscheint auch als Online-Ausgabe 978-3-7369-8906-1 Innovationen mit Mikrowellen und Licht Band 46 (DE-604)BV020018501 46 B:DE-101 application/pdf http://d-nb.info/1175307211/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030906603&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Luo, Peng 1987- GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements Innovationen mit Mikrowellen und Licht Haftstelle (DE-588)4246560-6 gnd Drain Elektronik (DE-588)4268287-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Source Elektronik (DE-588)4268290-3 gnd Streumatrix Elektrotechnik (DE-588)4213728-7 gnd HEMT (DE-588)4211873-6 gnd Halbleiter (DE-588)4022993-2 gnd Tiefe Störstelle (DE-588)4185419-6 gnd Galliumnitrid (DE-588)4375592-6 gnd Großsignalverhalten (DE-588)4158301-2 gnd |
| subject_GND | (DE-588)4246560-6 (DE-588)4268287-3 (DE-588)4125030-8 (DE-588)4268290-3 (DE-588)4213728-7 (DE-588)4211873-6 (DE-588)4022993-2 (DE-588)4185419-6 (DE-588)4375592-6 (DE-588)4158301-2 (DE-588)4113937-9 |
| title | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements |
| title_auth | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements |
| title_exact_search | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements |
| title_full | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements Peng Luo |
| title_fullStr | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements Peng Luo |
| title_full_unstemmed | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements Peng Luo |
| title_short | GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements |
| title_sort | gan hemt modeling including trapping effects based on chalmers model and pulsed s parameter measurements |
| topic | Haftstelle (DE-588)4246560-6 gnd Drain Elektronik (DE-588)4268287-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Source Elektronik (DE-588)4268290-3 gnd Streumatrix Elektrotechnik (DE-588)4213728-7 gnd HEMT (DE-588)4211873-6 gnd Halbleiter (DE-588)4022993-2 gnd Tiefe Störstelle (DE-588)4185419-6 gnd Galliumnitrid (DE-588)4375592-6 gnd Großsignalverhalten (DE-588)4158301-2 gnd |
| topic_facet | Haftstelle Drain Elektronik Gitterbaufehler Source Elektronik Streumatrix Elektrotechnik HEMT Halbleiter Tiefe Störstelle Galliumnitrid Großsignalverhalten Hochschulschrift |
| url | http://d-nb.info/1175307211/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=030906603&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV020018501 |
| work_keys_str_mv | AT luopeng ganhemtmodelingincludingtrappingeffectsbasedonchalmersmodelandpulsedsparametermeasurements AT ericcuvillierfirma ganhemtmodelingincludingtrappingeffectsbasedonchalmersmodelandpulsedsparametermeasurements |
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