Verfügbarkeit: Power GaN devices

Power GaN devices: materials, applications and reliability

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Bibliographische Detailangaben
Weitere Verfasser:	Meneghini, Matteo (HerausgeberIn)
Format:	Buch
Sprache:	English
Veröffentlicht:	[Cham], Switzerland Springer [2017]
Schriftenreihe:	Power electronics and power systems
Schlagworte:	Hochleistungswerkstoff Halbleiter Galliumnitrid GaN-based nanowire transistors GaN-based power transistors GaN-based vertical transistors Gallium nitride power transistors Lateral GaN-based power devices Nanowire-based HEMTs Normally-off devices Power GaN device reliability Single and double heterostructure devices
Online-Zugang:	http://www.springer.com/ Inhaltstext
Beschreibung:	x, 380 Seiten Illustrationen
ISBN:	9783319431970 9783319827568

Internformat

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Datensatz im Suchindex

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indexdate	2024-07-10T08:18:15Z
institution	BVB
isbn	9783319431970 9783319827568
language	English
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physical	x, 380 Seiten Illustrationen
publishDate	2017
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publisher	Springer
record_format	marc
series2	Power electronics and power systems
spelling	Power GaN devices materials, applications and reliability Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, editors [Cham], Switzerland Springer [2017] x, 380 Seiten Illustrationen txt rdacontent n rdamedia nc rdacarrier Power electronics and power systems Hochleistungswerkstoff (DE-588)4312250-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf GaN-based nanowire transistors GaN-based power transistors GaN-based vertical transistors Gallium nitride power transistors Lateral GaN-based power devices Nanowire-based HEMTs Normally-off devices Power GaN device reliability Single and double heterostructure devices Galliumnitrid (DE-588)4375592-6 s Hochleistungswerkstoff (DE-588)4312250-4 s DE-604 Halbleiter (DE-588)4022993-2 s Meneghini, Matteo (DE-588)1121332994 edt Erscheint auch als Online-Ausgabe 978-3-319-43199-4 http://www.springer.com/ Verlag X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=4ed0556d19ab426394be25799a6adc6d&prov=M&dok_var=1&dok_ext=htm Inhaltstext
spellingShingle	Power GaN devices materials, applications and reliability Hochleistungswerkstoff (DE-588)4312250-4 gnd Halbleiter (DE-588)4022993-2 gnd Galliumnitrid (DE-588)4375592-6 gnd
subject_GND	(DE-588)4312250-4 (DE-588)4022993-2 (DE-588)4375592-6
title	Power GaN devices materials, applications and reliability
title_auth	Power GaN devices materials, applications and reliability
title_exact_search	Power GaN devices materials, applications and reliability
title_full	Power GaN devices materials, applications and reliability Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, editors
title_fullStr	Power GaN devices materials, applications and reliability Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, editors
title_full_unstemmed	Power GaN devices materials, applications and reliability Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, editors
title_short	Power GaN devices
title_sort	power gan devices materials applications and reliability
title_sub	materials, applications and reliability
topic	Hochleistungswerkstoff (DE-588)4312250-4 gnd Halbleiter (DE-588)4022993-2 gnd Galliumnitrid (DE-588)4375592-6 gnd
topic_facet	Hochleistungswerkstoff Halbleiter Galliumnitrid
url	http://www.springer.com/ http://deposit.dnb.de/cgi-bin/dokserv?id=4ed0556d19ab426394be25799a6adc6d&prov=M&dok_var=1&dok_ext=htm
work_keys_str_mv	AT meneghinimatteo powergandevicesmaterialsapplicationsandreliability

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