Influence of a TESb flush on InAs/GaAs submonolayer stacks:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin
2018
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | 1 Online-Ressource (X, 118 Seiten) Illustrationen, Diagramme |
| DOI: | 10.14279/depositonce-7837 |
Internformat
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| 245 | 1 | 0 | |a Influence of a TESb flush on InAs/GaAs submonolayer stacks |c vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
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Datensatz im Suchindex
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| author | Quandt, Paul David Maximilian |
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| author_sort | Quandt, Paul David Maximilian |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:16:31Z |
| institution | BVB |
| language | English |
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| physical | 1 Online-Ressource (X, 118 Seiten) Illustrationen, Diagramme |
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| publishDate | 2018 |
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| spelling | Quandt, Paul David Maximilian Verfasser (DE-588)1194021093 aut Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin Berlin 2018 1 Online-Ressource (X, 118 Seiten) Illustrationen, Diagramme txt rdacontent c rdamedia cr rdacarrier Dissertation Technische Universität Berlin 2018 Monoschicht (DE-588)4250307-3 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Antimon (DE-588)4002299-7 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Quantenpunkt (DE-588)4263396-5 gnd rswk-swf InGaAs (DE-588)1135928177 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Quantenpunkt (DE-588)4263396-5 s Monoschicht (DE-588)4250307-3 s InGaAs (DE-588)1135928177 s MOCVD-Verfahren (DE-588)4314628-4 s Antimon (DE-588)4002299-7 s DE-604 Galliumarsenid (DE-588)4019155-2 s Erscheint auch als Druck-Ausgabe (DE-604)BV045378725 https://doi.org/10.14279/depositonce-7837 Resolving-System kostenfrei Volltext |
| spellingShingle | Quandt, Paul David Maximilian Influence of a TESb flush on InAs/GaAs submonolayer stacks Monoschicht (DE-588)4250307-3 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Antimon (DE-588)4002299-7 gnd Galliumarsenid (DE-588)4019155-2 gnd Quantenpunkt (DE-588)4263396-5 gnd InGaAs (DE-588)1135928177 gnd |
| subject_GND | (DE-588)4250307-3 (DE-588)4314628-4 (DE-588)4002299-7 (DE-588)4019155-2 (DE-588)4263396-5 (DE-588)1135928177 (DE-588)4113937-9 |
| title | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_auth | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_exact_search | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_full | Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| title_fullStr | Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| title_full_unstemmed | Influence of a TESb flush on InAs/GaAs submonolayer stacks vorgelegt von Master of Science Paul David Maximilian Quandt, geb. in Berlin |
| title_short | Influence of a TESb flush on InAs/GaAs submonolayer stacks |
| title_sort | influence of a tesb flush on inas gaas submonolayer stacks |
| topic | Monoschicht (DE-588)4250307-3 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Antimon (DE-588)4002299-7 gnd Galliumarsenid (DE-588)4019155-2 gnd Quantenpunkt (DE-588)4263396-5 gnd InGaAs (DE-588)1135928177 gnd |
| topic_facet | Monoschicht MOCVD-Verfahren Antimon Galliumarsenid Quantenpunkt InGaAs Hochschulschrift |
| url | https://doi.org/10.14279/depositonce-7837 |
| work_keys_str_mv | AT quandtpauldavidmaximilian influenceofatesbflushoninasgaassubmonolayerstacks |