Semiconductor lasers, II, Materials and structures:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
San Diego
Academic Press
1999
|
| Schriftenreihe: | Optics and photonics
|
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (xiv, 380 pages) illustrations |
| ISBN: | 9780080516967 0080516963 |
Internformat
MARC
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| 245 | 1 | 0 | |a Semiconductor lasers, II, Materials and structures |c edited by Eli Kapon |
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| 505 | 8 | |a This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals. Key Features * Covers important recent advances in materials, design, fabrication, and device structure of semiconductor lasers--aspects not covered in previously existing literature * Introduces the non-expert to the subject * Useful for professionals engaged in research and development * Numerous schematic and data-containing illustrations * Written by leading experts in the field | |
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| 650 | 7 | |a Semiconductor lasers |2 fast | |
| 650 | 4 | |a Lasers |a Semiconductor lasers | |
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| contents | This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals. Key Features * Covers important recent advances in materials, design, fabrication, and device structure of semiconductor lasers--aspects not covered in previously existing literature * Introduces the non-expert to the subject * Useful for professionals engaged in research and development * Numerous schematic and data-containing illustrations * Written by leading experts in the field |
| ctrlnum | (ZDB-4-ENC)ocn647695736 (OCoLC)647695736 (DE-599)BVBBV045343882 |
| dewey-full | 621.36/6 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.36/6 |
| dewey-search | 621.36/6 |
| dewey-sort | 3621.36 16 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045343882 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:29Z |
| institution | BVB |
| isbn | 9780080516967 0080516963 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030730586 |
| oclc_num | 647695736 |
| open_access_boolean | |
| physical | 1 online resource (xiv, 380 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Academic Press |
| record_format | marc |
| series2 | Optics and photonics |
| spelling | Semiconductor lasers, II, Materials and structures edited by Eli Kapon San Diego Academic Press 1999 1 online resource (xiv, 380 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Optics and photonics Print version record This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals. Key Features * Covers important recent advances in materials, design, fabrication, and device structure of semiconductor lasers--aspects not covered in previously existing literature * Introduces the non-expert to the subject * Useful for professionals engaged in research and development * Numerous schematic and data-containing illustrations * Written by leading experts in the field TECHNOLOGY & ENGINEERING / Lasers & Photonics bisacsh Lasers fast Semiconductor lasers fast Lasers Semiconductor lasers Kapon, Eli Sonstige oth Erscheint auch als Druck-Ausgabe Semiconductor lasers. II, Materials and structures San Diego : Academic Press, 1999 |
| spellingShingle | Semiconductor lasers, II, Materials and structures This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals. Key Features * Covers important recent advances in materials, design, fabrication, and device structure of semiconductor lasers--aspects not covered in previously existing literature * Introduces the non-expert to the subject * Useful for professionals engaged in research and development * Numerous schematic and data-containing illustrations * Written by leading experts in the field TECHNOLOGY & ENGINEERING / Lasers & Photonics bisacsh Lasers fast Semiconductor lasers fast Lasers Semiconductor lasers |
| title | Semiconductor lasers, II, Materials and structures |
| title_auth | Semiconductor lasers, II, Materials and structures |
| title_exact_search | Semiconductor lasers, II, Materials and structures |
| title_full | Semiconductor lasers, II, Materials and structures edited by Eli Kapon |
| title_fullStr | Semiconductor lasers, II, Materials and structures edited by Eli Kapon |
| title_full_unstemmed | Semiconductor lasers, II, Materials and structures edited by Eli Kapon |
| title_short | Semiconductor lasers, II, Materials and structures |
| title_sort | semiconductor lasers ii materials and structures |
| topic | TECHNOLOGY & ENGINEERING / Lasers & Photonics bisacsh Lasers fast Semiconductor lasers fast Lasers Semiconductor lasers |
| topic_facet | TECHNOLOGY & ENGINEERING / Lasers & Photonics Lasers Semiconductor lasers Lasers Semiconductor lasers |
| work_keys_str_mv | AT kaponeli semiconductorlasersiimaterialsandstructures |