Radiation defect engineering:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London
World Scientific
2005
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 37 |
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (viii, 253 pages) illustrations |
| ISBN: | 9812703195 9789812703194 9789812565211 9812565213 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV045343776 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 181206s2005 |||| o||u| ||||||eng d | ||
| 015 | |a GBA622212 |2 dnb | ||
| 020 | |a 9812703195 |9 981-270-319-5 | ||
| 020 | |a 9789812703194 |9 978-981-270-319-4 | ||
| 020 | |a 9789812565211 |9 978-981-256-521-1 | ||
| 020 | |a 9812565213 |9 981-256-521-3 | ||
| 035 | |a (ZDB-4-ENC)ocn614991499 | ||
| 035 | |a (OCoLC)614991499 | ||
| 035 | |a (DE-599)BVBBV045343776 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 082 | 0 | |a 621.38152 |2 22 | |
| 084 | |a ZN 4060 |0 (DE-625)157346: |2 rvk | ||
| 100 | 1 | |a Kozlovskii, V. V. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Radiation defect engineering |c Kozlovski Vitali, Abrosimova Vera |
| 246 | 1 | 3 | |a International journal of high speed electronics and systems |
| 264 | 1 | |a New Jersey ; London |b World Scientific |c 2005 | |
| 300 | |a 1 online resource (viii, 253 pages) |b illustrations | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Selected topics in electronics and systems |v v. 37 | |
| 500 | |a Print version record | ||
| 505 | 8 | |a The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Semiconductor doping |2 fast | |
| 650 | 7 | |a Semiconductors / Effect of radiation on |2 fast | |
| 650 | 4 | |a Semiconductor doping |a Semiconductors |x Effect of radiation on | |
| 650 | 0 | 7 | |a Ionenbestrahlung |0 (DE-588)4335201-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dotierung |0 (DE-588)4130672-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Dotierung |0 (DE-588)4130672-7 |D s |
| 689 | 0 | 2 | |a Ionenbestrahlung |0 (DE-588)4335201-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Abrosimova, Vera |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a Kozlovskii, V.V. (Vitalii Vasilevich) |t Radiation defect engineering |d New Jersey ; London : World Scientific, 2005 |z 9812565213 |
| 912 | |a ZDB-4-ENC | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030730480 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804179162829684736 |
|---|---|
| any_adam_object | |
| author | Kozlovskii, V. V. |
| author_facet | Kozlovskii, V. V. |
| author_role | aut |
| author_sort | Kozlovskii, V. V. |
| author_variant | v v k vv vvk |
| building | Verbundindex |
| bvnumber | BV045343776 |
| classification_rvk | ZN 4060 |
| collection | ZDB-4-ENC |
| contents | The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials |
| ctrlnum | (ZDB-4-ENC)ocn614991499 (OCoLC)614991499 (DE-599)BVBBV045343776 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02874nmm a2200565zcb4500</leader><controlfield tag="001">BV045343776</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">181206s2005 |||| o||u| ||||||eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">GBA622212</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812703195</subfield><subfield code="9">981-270-319-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812703194</subfield><subfield code="9">978-981-270-319-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812565211</subfield><subfield code="9">978-981-256-521-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812565213</subfield><subfield code="9">981-256-521-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-4-ENC)ocn614991499</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)614991499</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV045343776</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4060</subfield><subfield code="0">(DE-625)157346:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kozlovskii, V. V.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Radiation defect engineering</subfield><subfield code="c">Kozlovski Vitali, Abrosimova Vera</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">International journal of high speed electronics and systems</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Jersey ; London</subfield><subfield code="b">World Scientific</subfield><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (viii, 253 pages)</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics in electronics and systems</subfield><subfield code="v">v. 37</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Print version record</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductor doping</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Effect of radiation on</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield><subfield code="a">Semiconductors</subfield><subfield code="x">Effect of radiation on</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenbestrahlung</subfield><subfield code="0">(DE-588)4335201-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dotierung</subfield><subfield code="0">(DE-588)4130672-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Dotierung</subfield><subfield code="0">(DE-588)4130672-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Ionenbestrahlung</subfield><subfield code="0">(DE-588)4335201-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abrosimova, Vera</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="a">Kozlovskii, V.V. (Vitalii Vasilevich)</subfield><subfield code="t">Radiation defect engineering</subfield><subfield code="d">New Jersey ; London : World Scientific, 2005</subfield><subfield code="z">9812565213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-ENC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030730480</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV045343776 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:29Z |
| institution | BVB |
| isbn | 9812703195 9789812703194 9789812565211 9812565213 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030730480 |
| oclc_num | 614991499 |
| open_access_boolean | |
| physical | 1 online resource (viii, 253 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | World Scientific |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | Kozlovskii, V. V. Verfasser aut Radiation defect engineering Kozlovski Vitali, Abrosimova Vera International journal of high speed electronics and systems New Jersey ; London World Scientific 2005 1 online resource (viii, 253 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 37 Print version record The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Ionenbestrahlung (DE-588)4335201-7 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Dotierung (DE-588)4130672-7 s Ionenbestrahlung (DE-588)4335201-7 s 1\p DE-604 Abrosimova, Vera Sonstige oth Erscheint auch als Druck-Ausgabe Kozlovskii, V.V. (Vitalii Vasilevich) Radiation defect engineering New Jersey ; London : World Scientific, 2005 9812565213 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Kozlovskii, V. V. Radiation defect engineering The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Ionenbestrahlung (DE-588)4335201-7 gnd Dotierung (DE-588)4130672-7 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4335201-7 (DE-588)4130672-7 (DE-588)4022993-2 |
| title | Radiation defect engineering |
| title_alt | International journal of high speed electronics and systems |
| title_auth | Radiation defect engineering |
| title_exact_search | Radiation defect engineering |
| title_full | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_fullStr | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_full_unstemmed | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_short | Radiation defect engineering |
| title_sort | radiation defect engineering |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Ionenbestrahlung (DE-588)4335201-7 gnd Dotierung (DE-588)4130672-7 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Semiconductor doping Semiconductors / Effect of radiation on Semiconductor doping Semiconductors Effect of radiation on Ionenbestrahlung Dotierung Halbleiter |
| work_keys_str_mv | AT kozlovskiivv radiationdefectengineering AT abrosimovavera radiationdefectengineering AT kozlovskiivv internationaljournalofhighspeedelectronicsandsystems AT abrosimovavera internationaljournalofhighspeedelectronicsandsystems |