III-nitride: semiconductor materials
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
London
Imperial College Press ; Singapore ; Hackensack, NJ Distributed by World Scientific
2006
|
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (xii, 428 pages) illustrations |
| ISBN: | 1860946364 9781860946363 1860949037 9781860949036 1281867217 9781281867216 |
Internformat
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| 245 | 1 | 0 | |a III-nitride |b semiconductor materials |c editor, Zhe Chuan Feng |
| 264 | 1 | |a London |b Imperial College Press ; Singapore ; Hackensack, NJ |b Distributed by World Scientific |c 2006 | |
| 300 | |a 1 online resource (xii, 428 pages) |b illustrations | ||
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| 505 | 8 | |a III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals | |
| 650 | 4 | |a Semiconducteurs | |
| 650 | 4 | |a Nitrures / Proprietes electriques | |
| 650 | 4 | |a Electronique / Materiaux | |
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| 650 | 7 | |a Semiconductors / Materials |2 fast | |
| 650 | 4 | |a Semiconductors |x Materials |a Nitrides | |
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Datensatz im Suchindex
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| contents | III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals |
| ctrlnum | (ZDB-4-ENC)ocn294847682 (OCoLC)294847682 (DE-599)BVBBV045342883 |
| dewey-full | 541/.377 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 541 - Physical chemistry |
| dewey-raw | 541/.377 |
| dewey-search | 541/.377 |
| dewey-sort | 3541 3377 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Physik |
| format | Electronic eBook |
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| id | DE-604.BV045342883 |
| illustrated | Illustrated |
| indexdate | 2024-08-27T00:22:26Z |
| institution | BVB |
| isbn | 1860946364 9781860946363 1860949037 9781860949036 1281867217 9781281867216 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030729586 |
| oclc_num | 294847682 |
| open_access_boolean | |
| physical | 1 online resource (xii, 428 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | Imperial College Press ; Singapore ; Hackensack, NJ Distributed by World Scientific |
| record_format | marc |
| spelling | III-nitride semiconductor materials editor, Zhe Chuan Feng London Imperial College Press ; Singapore ; Hackensack, NJ Distributed by World Scientific 2006 1 online resource (xii, 428 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Print version record III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals Semiconducteurs Nitrures / Proprietes electriques Electronique / Materiaux Depot en phase vapeur par organometalliques SCIENCE / Chemistry / Physical & Theoretical bisacsh Nitrides fast Semiconductors / Materials fast Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Borgruppennitride (DE-588)4590273-2 s Wide-bandgap Halbleiter (DE-588)4273153-7 s 1\p DE-604 Feng, Zhe Chuan Sonstige oth III-nitride London : Imperial College Press ; Singapore ; Hackensack, NJ : Distributed by World Scientific, 2006 1860946364 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | III-nitride semiconductor materials III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals Semiconducteurs Nitrures / Proprietes electriques Electronique / Materiaux Depot en phase vapeur par organometalliques SCIENCE / Chemistry / Physical & Theoretical bisacsh Nitrides fast Semiconductors / Materials fast Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4590273-2 (DE-588)4273153-7 |
| title | III-nitride semiconductor materials |
| title_auth | III-nitride semiconductor materials |
| title_exact_search | III-nitride semiconductor materials |
| title_full | III-nitride semiconductor materials editor, Zhe Chuan Feng |
| title_fullStr | III-nitride semiconductor materials editor, Zhe Chuan Feng |
| title_full_unstemmed | III-nitride semiconductor materials editor, Zhe Chuan Feng |
| title_short | III-nitride |
| title_sort | iii nitride semiconductor materials |
| title_sub | semiconductor materials |
| topic | Semiconducteurs Nitrures / Proprietes electriques Electronique / Materiaux Depot en phase vapeur par organometalliques SCIENCE / Chemistry / Physical & Theoretical bisacsh Nitrides fast Semiconductors / Materials fast Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Semiconducteurs Nitrures / Proprietes electriques Electronique / Materiaux Depot en phase vapeur par organometalliques SCIENCE / Chemistry / Physical & Theoretical Nitrides Semiconductors / Materials Semiconductors Materials Nitrides Borgruppennitride Wide-bandgap Halbleiter |
| work_keys_str_mv | AT fengzhechuan iiinitridesemiconductormaterials |