Breakdown phenomena in semiconductors and semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London
World Scientific
2005
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 36 |
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (xiii, 208 pages) illustrations |
| ISBN: | 9812563954 9789812563958 9812703330 9789812703330 |
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| 245 | 1 | 0 | |a Breakdown phenomena in semiconductors and semiconductor devices |c Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| 264 | 1 | |a New Jersey ; London |b World Scientific |c 2005 | |
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| 490 | 0 | |a Selected topics in electronics and systems |v v. 36 | |
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| 505 | 8 | |a Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi | |
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Datensatz im Suchindex
| _version_ | 1804179160270110720 |
|---|---|
| any_adam_object | |
| author | Levinshtein, M. E. |
| author_facet | Levinshtein, M. E. |
| author_role | aut |
| author_sort | Levinshtein, M. E. |
| author_variant | m e l me mel |
| building | Verbundindex |
| bvnumber | BV045342481 |
| classification_rvk | ZN 3460 |
| collection | ZDB-4-ENC |
| contents | Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi |
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| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| spelling | Levinshtein, M. E. Verfasser aut Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein New Jersey ; London World Scientific 2005 1 online resource (xiii, 208 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 36 Print version record Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Semiconductors Breakdown (Electricity) High voltages Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Elektrischer Durchbruch (DE-588)4272300-0 gnd rswk-swf 1\p (DE-588)4006432-3 Bibliografie gnd-content Halbleiterbauelement (DE-588)4113826-0 s Elektrischer Durchbruch (DE-588)4272300-0 s 2\p DE-604 Halbleiter (DE-588)4022993-2 s 3\p DE-604 Kostamovaara, Juha Sonstige oth Vainshtein, Sergey Sonstige oth Erscheint auch als Druck-Ausgabe Levinshtein, M.E. (Mikhail Efimovich) Breakdown phenomena in semiconductors and semiconductor devices New Jersey ; London : World Scientific, 2005 9812563954 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Levinshtein, M. E. Breakdown phenomena in semiconductors and semiconductor devices Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Semiconductors Breakdown (Electricity) High voltages Halbleiter (DE-588)4022993-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4113826-0 (DE-588)4272300-0 (DE-588)4006432-3 |
| title | Breakdown phenomena in semiconductors and semiconductor devices |
| title_auth | Breakdown phenomena in semiconductors and semiconductor devices |
| title_exact_search | Breakdown phenomena in semiconductors and semiconductor devices |
| title_full | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_fullStr | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_full_unstemmed | Breakdown phenomena in semiconductors and semiconductor devices Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein |
| title_short | Breakdown phenomena in semiconductors and semiconductor devices |
| title_sort | breakdown phenomena in semiconductors and semiconductor devices |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Semiconductors Breakdown (Electricity) High voltages Halbleiter (DE-588)4022993-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Breakdown (Electricity) High voltages Semiconductors Semiconductors Breakdown (Electricity) High voltages Halbleiter Halbleiterbauelement Elektrischer Durchbruch Bibliografie |
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