SiC materials and devices, Volume 1:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London
World Scientific
2006
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 40 |
| Schlagworte: | |
| Beschreibung: | Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner Print version record |
| Beschreibung: | 1 online resource (v, 1033 pages) illustrations |
| ISBN: | 9789812773371 9812773371 |
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| 245 | 1 | 0 | |a SiC materials and devices, Volume 1 |c edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| 264 | 1 | |a New Jersey ; London |b World Scientific |c 2006 | |
| 300 | |a 1 online resource (v, 1033 pages) |b illustrations | ||
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| 490 | 0 | |a Selected topics in electronics and systems |v v. 40 | |
| 500 | |a Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner | ||
| 500 | |a Print version record | ||
| 505 | 8 | |a After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
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| 650 | 7 | |a Silicon carbide / Electric properties |2 fast | |
| 650 | 4 | |a Silicon carbide |x Electric properties |a Semiconductors | |
| 700 | 1 | |a Shur, Michael |e Sonstige |4 oth | |
| 700 | 1 | |a Rumyantsev, Sergey L. |e Sonstige |4 oth | |
| 700 | 1 | |a Levinshtein, M. E. |e Sonstige |4 oth | |
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| contents | After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi |
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| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045342420 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:27Z |
| institution | BVB |
| isbn | 9789812773371 9812773371 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030729123 |
| oclc_num | 182664344 |
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| physical | 1 online resource (v, 1033 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | World Scientific |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | SiC materials and devices, Volume 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein New Jersey ; London World Scientific 2006 1 online resource (v, 1033 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 40 Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner Print version record After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductors fast Silicon carbide / Electric properties fast Silicon carbide Electric properties Semiconductors Shur, Michael Sonstige oth Rumyantsev, Sergey L. Sonstige oth Levinshtein, M. E. Sonstige oth Erscheint auch als Druck-Ausgabe SiC materials and devices. Volume 1 New Jersey ; London : World Scientific, 2006 9812568352 9789812568359 |
| spellingShingle | SiC materials and devices, Volume 1 After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductors fast Silicon carbide / Electric properties fast Silicon carbide Electric properties Semiconductors |
| title | SiC materials and devices, Volume 1 |
| title_auth | SiC materials and devices, Volume 1 |
| title_exact_search | SiC materials and devices, Volume 1 |
| title_full | SiC materials and devices, Volume 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| title_fullStr | SiC materials and devices, Volume 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| title_full_unstemmed | SiC materials and devices, Volume 1 edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
| title_short | SiC materials and devices, Volume 1 |
| title_sort | sic materials and devices volume 1 |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductors fast Silicon carbide / Electric properties fast Silicon carbide Electric properties Semiconductors |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Semiconductors Silicon carbide / Electric properties Silicon carbide Electric properties Semiconductors |
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