Mosfet modeling for VLSI simulation: theory and practice
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey
World Scientific
2007
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (xxiii, 605 pages) illustrations |
| ISBN: | 9789812707581 9812707581 |
Internformat
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| 100 | 1 | |a Arora, N. |d 1943- |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Mosfet modeling for VLSI simulation |b theory and practice |c Narain Arora |
| 264 | 1 | |a New Jersey |b World Scientific |c 2007 | |
| 300 | |a 1 online resource (xxiii, 605 pages) |b illustrations | ||
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| 490 | 0 | |a International series on advances in solid state electronics and technology | |
| 500 | |a Print version record | ||
| 505 | 8 | |a A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
| 650 | 7 | |a Integrated circuits / Very large scale integration |2 fast | |
| 650 | 7 | |a Integrated circuits / Very large scale integration / Computer simulation |2 fast | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |2 fast | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors |a Integrated circuits |x Very large scale integration |a Integrated circuits |x Very large scale integration |x Computer simulation | |
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Datensatz im Suchindex
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| author | Arora, N. 1943- |
| author_facet | Arora, N. 1943- |
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| author_sort | Arora, N. 1943- |
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| building | Verbundindex |
| bvnumber | BV045342177 |
| collection | ZDB-4-ENC |
| contents | A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required |
| ctrlnum | (ZDB-4-ENC)ocn173612115 (OCoLC)173612115 (DE-599)BVBBV045342177 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045342177 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:26Z |
| institution | BVB |
| isbn | 9789812707581 9812707581 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030728880 |
| oclc_num | 173612115 |
| open_access_boolean | |
| physical | 1 online resource (xxiii, 605 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Arora, N. 1943- Verfasser aut Mosfet modeling for VLSI simulation theory and practice Narain Arora New Jersey World Scientific 2007 1 online resource (xxiii, 605 pages) illustrations txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Print version record A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Integrated circuits / Very large scale integration fast Integrated circuits / Very large scale integration / Computer simulation fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation Erscheint auch als Druck-Ausgabe Arora, N. (Narain), 1943- Mosfet modeling for VLSI simulation New Jersey : World Scientific, 2007 9789812568625 981256862X |
| spellingShingle | Arora, N. 1943- Mosfet modeling for VLSI simulation theory and practice A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Integrated circuits / Very large scale integration fast Integrated circuits / Very large scale integration / Computer simulation fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation |
| title | Mosfet modeling for VLSI simulation theory and practice |
| title_auth | Mosfet modeling for VLSI simulation theory and practice |
| title_exact_search | Mosfet modeling for VLSI simulation theory and practice |
| title_full | Mosfet modeling for VLSI simulation theory and practice Narain Arora |
| title_fullStr | Mosfet modeling for VLSI simulation theory and practice Narain Arora |
| title_full_unstemmed | Mosfet modeling for VLSI simulation theory and practice Narain Arora |
| title_short | Mosfet modeling for VLSI simulation |
| title_sort | mosfet modeling for vlsi simulation theory and practice |
| title_sub | theory and practice |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Integrated circuits / Very large scale integration fast Integrated circuits / Very large scale integration / Computer simulation fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Integrated circuits / Very large scale integration Integrated circuits / Very large scale integration / Computer simulation Metal oxide semiconductor field-effect transistors Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation |
| work_keys_str_mv | AT aroran mosfetmodelingforvlsisimulationtheoryandpractice |