Rapid thermal processing for future semiconductor devices: proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam ; London
Elsevier
2003
|
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (x, 150 pages) illustrations |
| ISBN: | 9780444513397 0444513396 9780080540269 0080540260 |
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| 505 | 8 | |a This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies | |
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| contents | This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies |
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| spelling | International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan> Verfasser aut Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda Amsterdam ; London Elsevier 2003 1 online resource (x, 150 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Print version record This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Rapid thermal processing fast Semiconductors / Heat treatment fast Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Rapid thermal processing (DE-588)4347011-7 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift gnd-content 2\p (DE-588)1071861417 Konferenzschrift 2001 Ise gnd-content Halbleiter (DE-588)4022993-2 s Rapid thermal processing (DE-588)4347011-7 s 3\p DE-604 Fukuda, Hisashi Sonstige oth Erscheint auch als Druck-Ausgabe International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan) Rapid thermal processing for future semiconductor devices Amsterdam ; London : Elsevier, 2003 0444513396 9780444513397 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Rapid thermal processing fast Semiconductors / Heat treatment fast Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter (DE-588)4022993-2 gnd Rapid thermal processing (DE-588)4347011-7 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4347011-7 (DE-588)1071861417 |
| title | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| title_auth | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| title_exact_search | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| title_full | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda |
| title_fullStr | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda |
| title_full_unstemmed | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda |
| title_short | Rapid thermal processing for future semiconductor devices |
| title_sort | rapid thermal processing for future semiconductor devices proceedings of the 2001 international conference on rapid thermal processing for future semiconductor devices rtp 2001 held at ise shima mie japan november 14 16 2001 |
| title_sub | proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Rapid thermal processing fast Semiconductors / Heat treatment fast Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter (DE-588)4022993-2 gnd Rapid thermal processing (DE-588)4347011-7 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Rapid thermal processing Semiconductors / Heat treatment Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter Konferenzschrift Konferenzschrift 2001 Ise |
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