GaN-based materials and devices: growth, fabrication, characterization and performance
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| Format: | Electronic eBook |
|---|---|
| Language: | English |
| Published: |
River Edge, N.J. ; London
World Scientific.
2004
|
| Series: | Selected topics in electronics and systems
v. 33 |
| Subjects: | |
| Item Description: | Print version record |
| Physical Description: | 1 online resource (x, 284 pages) illustrations |
| ISBN: | 9812562362 9789812562364 1281347620 9781281347626 |
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| 505 | 8 | |a The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology | |
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| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
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| 650 | 7 | |a Semiconductors / Materials |2 cct | |
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| 650 | 7 | |a Semiconductors / Materials |2 fast | |
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| contents | The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology |
| ctrlnum | (ZDB-4-ENC)ocm59550183 (OCoLC)59550183 (DE-599)BVBBV045341244 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045341244 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:24Z |
| institution | BVB |
| isbn | 9812562362 9789812562364 1281347620 9781281347626 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030727947 |
| oclc_num | 59550183 |
| open_access_boolean | |
| physical | 1 online resource (x, 284 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | World Scientific. |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis River Edge, N.J. ; London World Scientific. 2004 1 online resource (x, 284 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 33 Print version record The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride cct Semiconductors / Materials cct Gallium nitride fast Semiconductors / Materials fast Gallium nitride Semiconductors Materials Shur, Michael Sonstige oth Davis, Robert F. 1942- Sonstige oth Erscheint auch als Druck-Ausgabe GaN-based materials and devices River Edge, N.J. ; London : World Scientific., 2004 9812388443 |
| spellingShingle | GaN-based materials and devices growth, fabrication, characterization and performance The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride cct Semiconductors / Materials cct Gallium nitride fast Semiconductors / Materials fast Gallium nitride Semiconductors Materials |
| title | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_auth | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_exact_search | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_full | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis |
| title_fullStr | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis |
| title_full_unstemmed | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis |
| title_short | GaN-based materials and devices |
| title_sort | gan based materials and devices growth fabrication characterization and performance |
| title_sub | growth, fabrication, characterization and performance |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride cct Semiconductors / Materials cct Gallium nitride fast Semiconductors / Materials fast Gallium nitride Semiconductors Materials |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Gallium nitride Semiconductors / Materials Gallium nitride Semiconductors Materials |
| work_keys_str_mv | AT shurmichael ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance AT davisrobertf ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance |