GaN-based materials and devices: growth, fabrication, characterization and performance
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
River Edge, N.J. ; London
World Scientific.
2004
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 33 |
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (x, 284 pages) illustrations |
| ISBN: | 9812562362 9789812562364 1281347620 9781281347626 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV045341244 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 181206s2004 |||| o||u| ||||||eng d | ||
| 020 | |a 9812562362 |9 981-256-236-2 | ||
| 020 | |a 9789812562364 |9 978-981-256-236-4 | ||
| 020 | |a 1281347620 |9 1-281-34762-0 | ||
| 020 | |a 9781281347626 |9 978-1-281-34762-6 | ||
| 035 | |a (ZDB-4-ENC)ocm59550183 | ||
| 035 | |a (OCoLC)59550183 | ||
| 035 | |a (DE-599)BVBBV045341244 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 082 | 0 | |a 621.38152 |2 22 | |
| 245 | 1 | 0 | |a GaN-based materials and devices |b growth, fabrication, characterization and performance |c editors M.S. Shur, R.F. Davis |
| 264 | 1 | |a River Edge, N.J. ; London |b World Scientific. |c 2004 | |
| 300 | |a 1 online resource (x, 284 pages) |b illustrations | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Selected topics in electronics and systems |v v. 33 | |
| 500 | |a Print version record | ||
| 505 | 8 | |a The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Gallium nitride |2 cct | |
| 650 | 7 | |a Semiconductors / Materials |2 cct | |
| 650 | 7 | |a Gallium nitride |2 fast | |
| 650 | 7 | |a Semiconductors / Materials |2 fast | |
| 650 | 4 | |a Gallium nitride |a Semiconductors |x Materials | |
| 700 | 1 | |a Shur, Michael |e Sonstige |4 oth | |
| 700 | 1 | |a Davis, Robert F. |d 1942- |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |t GaN-based materials and devices |d River Edge, N.J. ; London : World Scientific., 2004 |z 9812388443 |
| 912 | |a ZDB-4-ENC | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030727947 | ||
Datensatz im Suchindex
| _version_ | 1804179157725216768 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV045341244 |
| collection | ZDB-4-ENC |
| contents | The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology |
| ctrlnum | (ZDB-4-ENC)ocm59550183 (OCoLC)59550183 (DE-599)BVBBV045341244 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02707nmm a2200457zcb4500</leader><controlfield tag="001">BV045341244</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">181206s2004 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812562362</subfield><subfield code="9">981-256-236-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812562364</subfield><subfield code="9">978-981-256-236-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1281347620</subfield><subfield code="9">1-281-34762-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781281347626</subfield><subfield code="9">978-1-281-34762-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-4-ENC)ocm59550183</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)59550183</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV045341244</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">GaN-based materials and devices</subfield><subfield code="b">growth, fabrication, characterization and performance</subfield><subfield code="c">editors M.S. Shur, R.F. Davis</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">River Edge, N.J. ; London</subfield><subfield code="b">World Scientific.</subfield><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (x, 284 pages)</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics in electronics and systems</subfield><subfield code="v">v. 33</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Print version record</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Gallium nitride</subfield><subfield code="2">cct</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Materials</subfield><subfield code="2">cct</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Gallium nitride</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Materials</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium nitride</subfield><subfield code="a">Semiconductors</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shur, Michael</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davis, Robert F.</subfield><subfield code="d">1942-</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="t">GaN-based materials and devices</subfield><subfield code="d">River Edge, N.J. ; London : World Scientific., 2004</subfield><subfield code="z">9812388443</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-ENC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030727947</subfield></datafield></record></collection> |
| id | DE-604.BV045341244 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:24Z |
| institution | BVB |
| isbn | 9812562362 9789812562364 1281347620 9781281347626 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030727947 |
| oclc_num | 59550183 |
| open_access_boolean | |
| physical | 1 online resource (x, 284 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | World Scientific. |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis River Edge, N.J. ; London World Scientific. 2004 1 online resource (x, 284 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 33 Print version record The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride cct Semiconductors / Materials cct Gallium nitride fast Semiconductors / Materials fast Gallium nitride Semiconductors Materials Shur, Michael Sonstige oth Davis, Robert F. 1942- Sonstige oth Erscheint auch als Druck-Ausgabe GaN-based materials and devices River Edge, N.J. ; London : World Scientific., 2004 9812388443 |
| spellingShingle | GaN-based materials and devices growth, fabrication, characterization and performance The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride cct Semiconductors / Materials cct Gallium nitride fast Semiconductors / Materials fast Gallium nitride Semiconductors Materials |
| title | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_auth | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_exact_search | GaN-based materials and devices growth, fabrication, characterization and performance |
| title_full | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis |
| title_fullStr | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis |
| title_full_unstemmed | GaN-based materials and devices growth, fabrication, characterization and performance editors M.S. Shur, R.F. Davis |
| title_short | GaN-based materials and devices |
| title_sort | gan based materials and devices growth fabrication characterization and performance |
| title_sub | growth, fabrication, characterization and performance |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Gallium nitride cct Semiconductors / Materials cct Gallium nitride fast Semiconductors / Materials fast Gallium nitride Semiconductors Materials |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Gallium nitride Semiconductors / Materials Gallium nitride Semiconductors Materials |
| work_keys_str_mv | AT shurmichael ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance AT davisrobertf ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance |