Silicon-germanium heterojunction bipolar transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Artech House
2003
|
| Schlagworte: | |
| Beschreibung: | Print version record |
| Beschreibung: | 1 online resource (xviii, 570 pages) illustrations |
| ISBN: | 1580535992 9781580535991 |
Internformat
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| 100 | 1 | |a Cressler, John D. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Silicon-germanium heterojunction bipolar transistors |c John D. Cressler, Guofu Niu |
| 264 | 1 | |a Boston, MA |b Artech House |c 2003 | |
| 300 | |a 1 online resource (xviii, 570 pages) |b illustrations | ||
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| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Print version record | ||
| 505 | 8 | |a This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
| 650 | 7 | |a Germanium |2 cct | |
| 650 | 7 | |a Bipolar transistors |2 cct | |
| 650 | 7 | |a Bipolar transistors |2 fast | |
| 650 | 7 | |a Germanium |2 fast | |
| 650 | 4 | |a Bipolar transistors |a Germanium | |
| 700 | 1 | |a Niu, Guofu |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a Cressler, John D. |t Silicon-germanium heterojunction bipolar transistors |d Boston, MA : Artech House, 2003 |z 1580533612 |
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Datensatz im Suchindex
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| any_adam_object | |
| author | Cressler, John D. |
| author_facet | Cressler, John D. |
| author_role | aut |
| author_sort | Cressler, John D. |
| author_variant | j d c jd jdc |
| building | Verbundindex |
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| collection | ZDB-4-ENC |
| contents | This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. |
| ctrlnum | (ZDB-4-ENC)ocm53004108 (OCoLC)53004108 (DE-599)BVBBV045340964 |
| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV045340964 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T08:15:24Z |
| institution | BVB |
| isbn | 1580535992 9781580535991 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030727668 |
| oclc_num | 53004108 |
| open_access_boolean | |
| physical | 1 online resource (xviii, 570 pages) illustrations |
| psigel | ZDB-4-ENC |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Artech House |
| record_format | marc |
| spelling | Cressler, John D. Verfasser aut Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu Boston, MA Artech House 2003 1 online resource (xviii, 570 pages) illustrations txt rdacontent c rdamedia cr rdacarrier Print version record This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Germanium cct Bipolar transistors cct Bipolar transistors fast Germanium fast Bipolar transistors Germanium Niu, Guofu Sonstige oth Erscheint auch als Druck-Ausgabe Cressler, John D. Silicon-germanium heterojunction bipolar transistors Boston, MA : Artech House, 2003 1580533612 |
| spellingShingle | Cressler, John D. Silicon-germanium heterojunction bipolar transistors This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Germanium cct Bipolar transistors cct Bipolar transistors fast Germanium fast Bipolar transistors Germanium |
| title | Silicon-germanium heterojunction bipolar transistors |
| title_auth | Silicon-germanium heterojunction bipolar transistors |
| title_exact_search | Silicon-germanium heterojunction bipolar transistors |
| title_full | Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu |
| title_fullStr | Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu |
| title_full_unstemmed | Silicon-germanium heterojunction bipolar transistors John D. Cressler, Guofu Niu |
| title_short | Silicon-germanium heterojunction bipolar transistors |
| title_sort | silicon germanium heterojunction bipolar transistors |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Germanium cct Bipolar transistors cct Bipolar transistors fast Germanium fast Bipolar transistors Germanium |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Germanium Bipolar transistors Bipolar transistors Germanium |
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