Characterization of wide bandgap power semiconductor devices:
Gespeichert in:
Hauptverfasser: | , , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
London
<<The>> Institution of Engineering and Technology
2018
|
Schriftenreihe: | IET energy engineering
128 |
Schlagworte: | |
Online-Zugang: | DE-863 DE-862 DE-703 DE-706 DE-29 URL des Erstveröffentlichers |
Beschreibung: | 1 Online-Ressource (349 Seiten) Illustrationen |
ISBN: | 9781785614927 9781523119349 |
DOI: | 10.1049/PBPO128E |
Internformat
MARC
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100 | 1 | |a Wang, Fei |e Verfasser |0 (DE-588)142310611 |4 aut | |
245 | 1 | 0 | |a Characterization of wide bandgap power semiconductor devices |c Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones |
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490 | 1 | |a IET energy engineering |v 128 | |
650 | 4 | |a Wide gap semiconductors | |
650 | 4 | |a Power semiconductors | |
650 | 4 | |a Electric capacity | |
650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
650 | 7 | |a Electric capacity |2 fast | |
650 | 7 | |a Power semiconductors |2 fast | |
650 | 7 | |a Wide gap semiconductors |2 fast | |
650 | 7 | |a capacitance |2 inspect | |
650 | 7 | |a network topology |2 inspect | |
650 | 7 | |a power semiconductor devices |2 inspect | |
650 | 7 | |a semiconductor device models |2 inspect | |
650 | 7 | |a wide band gap semiconductors |2 inspect | |
700 | 1 | |a Zhang, Zheyu |e Verfasser |4 aut | |
700 | 1 | |a Jones, Edward A. |e Verfasser |4 aut | |
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Datensatz im Suchindex
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id | DE-604.BV045249341 |
illustrated | Not Illustrated |
indexdate | 2025-02-20T07:00:30Z |
institution | BVB |
isbn | 9781785614927 9781523119349 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030637386 |
oclc_num | 1059293145 |
open_access_boolean | |
owner | DE-29 DE-863 DE-BY-FWS DE-862 DE-BY-FWS DE-703 DE-706 |
owner_facet | DE-29 DE-863 DE-BY-FWS DE-862 DE-BY-FWS DE-703 DE-706 |
physical | 1 Online-Ressource (349 Seiten) Illustrationen |
psigel | ZDB-10-ESC ZDB-100-IET ZDB-100-IET UBT_PDA_IET_Kauf |
publishDate | 2018 |
publishDateSearch | 2018 |
publishDateSort | 2018 |
publisher | <<The>> Institution of Engineering and Technology |
record_format | marc |
series | IET energy engineering |
series2 | IET energy engineering |
spellingShingle | Wang, Fei Zhang, Zheyu Jones, Edward A. Characterization of wide bandgap power semiconductor devices IET energy engineering Wide gap semiconductors Power semiconductors Electric capacity TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electric capacity fast Power semiconductors fast Wide gap semiconductors fast capacitance inspect network topology inspect power semiconductor devices inspect semiconductor device models inspect wide band gap semiconductors inspect |
title | Characterization of wide bandgap power semiconductor devices |
title_auth | Characterization of wide bandgap power semiconductor devices |
title_exact_search | Characterization of wide bandgap power semiconductor devices |
title_full | Characterization of wide bandgap power semiconductor devices Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones |
title_fullStr | Characterization of wide bandgap power semiconductor devices Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones |
title_full_unstemmed | Characterization of wide bandgap power semiconductor devices Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones |
title_short | Characterization of wide bandgap power semiconductor devices |
title_sort | characterization of wide bandgap power semiconductor devices |
topic | Wide gap semiconductors Power semiconductors Electric capacity TECHNOLOGY & ENGINEERING / Mechanical bisacsh Electric capacity fast Power semiconductors fast Wide gap semiconductors fast capacitance inspect network topology inspect power semiconductor devices inspect semiconductor device models inspect wide band gap semiconductors inspect |
topic_facet | Wide gap semiconductors Power semiconductors Electric capacity TECHNOLOGY & ENGINEERING / Mechanical capacitance network topology power semiconductor devices semiconductor device models wide band gap semiconductors |
url | https://doi.org/10.1049/PBPO128E |
volume_link | (DE-604)BV045297603 |
work_keys_str_mv | AT wangfei characterizationofwidebandgappowersemiconductordevices AT zhangzheyu characterizationofwidebandgappowersemiconductordevices AT jonesedwarda characterizationofwidebandgappowersemiconductordevices |