MOSFET Models for VLSI Circuit Simulation: Theory and Practice
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Vienna
Springer Vienna
1993
|
| Schriftenreihe: | Computational Microelectronics
|
| Schlagworte: | |
| Online-Zugang: | BTU01 Volltext |
| Zusammenfassung: | Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction |
| Beschreibung: | 1 Online-Ressource (XXII, 605 p) |
| ISBN: | 9783709192474 |
| DOI: | 10.1007/978-3-7091-9247-4 |
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Datensatz im Suchindex
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| id | DE-604.BV045187894 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:11:00Z |
| institution | BVB |
| isbn | 9783709192474 |
| language | English |
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| spelling | Arora, Narain Verfasser aut MOSFET Models for VLSI Circuit Simulation Theory and Practice by Narain Arora Vienna Springer Vienna 1993 1 Online-Ressource (XXII, 605 p) txt rdacontent c rdamedia cr rdacarrier Computational Microelectronics Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction Computer Science Software Engineering/Programming and Operating Systems Appl.Mathematics/Computational Methods of Engineering Optical and Electronic Materials Numerical Analysis Electronics and Microelectronics, Instrumentation Computer science Software engineering Numerical analysis Applied mathematics Engineering mathematics Electronics Microelectronics Optical materials Electronic materials MOS-FET (DE-588)4207266-9 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf Elektronische Schaltung (DE-588)4113419-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s VLSI (DE-588)4117388-0 s Simulation (DE-588)4055072-2 s Elektronische Schaltung (DE-588)4113419-9 s 1\p DE-604 Erscheint auch als Druck-Ausgabe 9783709192498 https://doi.org/10.1007/978-3-7091-9247-4 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Arora, Narain MOSFET Models for VLSI Circuit Simulation Theory and Practice Computer Science Software Engineering/Programming and Operating Systems Appl.Mathematics/Computational Methods of Engineering Optical and Electronic Materials Numerical Analysis Electronics and Microelectronics, Instrumentation Computer science Software engineering Numerical analysis Applied mathematics Engineering mathematics Electronics Microelectronics Optical materials Electronic materials MOS-FET (DE-588)4207266-9 gnd VLSI (DE-588)4117388-0 gnd Simulation (DE-588)4055072-2 gnd Elektronische Schaltung (DE-588)4113419-9 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4117388-0 (DE-588)4055072-2 (DE-588)4113419-9 |
| title | MOSFET Models for VLSI Circuit Simulation Theory and Practice |
| title_auth | MOSFET Models for VLSI Circuit Simulation Theory and Practice |
| title_exact_search | MOSFET Models for VLSI Circuit Simulation Theory and Practice |
| title_full | MOSFET Models for VLSI Circuit Simulation Theory and Practice by Narain Arora |
| title_fullStr | MOSFET Models for VLSI Circuit Simulation Theory and Practice by Narain Arora |
| title_full_unstemmed | MOSFET Models for VLSI Circuit Simulation Theory and Practice by Narain Arora |
| title_short | MOSFET Models for VLSI Circuit Simulation |
| title_sort | mosfet models for vlsi circuit simulation theory and practice |
| title_sub | Theory and Practice |
| topic | Computer Science Software Engineering/Programming and Operating Systems Appl.Mathematics/Computational Methods of Engineering Optical and Electronic Materials Numerical Analysis Electronics and Microelectronics, Instrumentation Computer science Software engineering Numerical analysis Applied mathematics Engineering mathematics Electronics Microelectronics Optical materials Electronic materials MOS-FET (DE-588)4207266-9 gnd VLSI (DE-588)4117388-0 gnd Simulation (DE-588)4055072-2 gnd Elektronische Schaltung (DE-588)4113419-9 gnd |
| topic_facet | Computer Science Software Engineering/Programming and Operating Systems Appl.Mathematics/Computational Methods of Engineering Optical and Electronic Materials Numerical Analysis Electronics and Microelectronics, Instrumentation Computer science Software engineering Numerical analysis Applied mathematics Engineering mathematics Electronics Microelectronics Optical materials Electronic materials MOS-FET VLSI Simulation Elektronische Schaltung |
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