Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits:
As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Compute...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1993
|
| Schriftenreihe: | The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing
211 |
| Schlagworte: | |
| Online-Zugang: | DE-634 Volltext |
| Zusammenfassung: | As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject |
| Beschreibung: | 1 Online-Ressource (XVII, 190 p) |
| ISBN: | 9781461531500 |
| DOI: | 10.1007/978-1-4615-3150-0 |
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| 520 | |a As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject | ||
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| illustrated | Not Illustrated |
| indexdate | 2024-10-23T12:02:34Z |
| institution | BVB |
| isbn | 9781461531500 |
| language | English |
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| series2 | The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing |
| spelling | Michael, Christopher Verfasser aut Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits by Christopher Michael, Mohammed Ismail Boston, MA Springer US 1993 1 Online-Ressource (XVII, 190 p) txt rdacontent c rdamedia cr rdacarrier The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing 211 As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject Computer Science Computer-Aided Engineering (CAD, CAE) and Design Electrical Engineering Computer science Computer-aided engineering Electrical engineering MOS-Schaltung (DE-588)4135571-4 gnd rswk-swf Statistisches Modell (DE-588)4121722-6 gnd rswk-swf Entwurf (DE-588)4121208-3 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 s VLSI (DE-588)4117388-0 s Entwurf (DE-588)4121208-3 s Statistisches Modell (DE-588)4121722-6 s 1\p DE-604 Ismail, Mohammed aut Erscheint auch als Druck-Ausgabe 9781461363798 https://doi.org/10.1007/978-1-4615-3150-0 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Michael, Christopher Ismail, Mohammed Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits Computer Science Computer-Aided Engineering (CAD, CAE) and Design Electrical Engineering Computer science Computer-aided engineering Electrical engineering MOS-Schaltung (DE-588)4135571-4 gnd Statistisches Modell (DE-588)4121722-6 gnd Entwurf (DE-588)4121208-3 gnd VLSI (DE-588)4117388-0 gnd |
| subject_GND | (DE-588)4135571-4 (DE-588)4121722-6 (DE-588)4121208-3 (DE-588)4117388-0 |
| title | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits |
| title_auth | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits |
| title_exact_search | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits |
| title_full | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits by Christopher Michael, Mohammed Ismail |
| title_fullStr | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits by Christopher Michael, Mohammed Ismail |
| title_full_unstemmed | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits by Christopher Michael, Mohammed Ismail |
| title_short | Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits |
| title_sort | statistical modeling for computer aided design of mos vlsi circuits |
| topic | Computer Science Computer-Aided Engineering (CAD, CAE) and Design Electrical Engineering Computer science Computer-aided engineering Electrical engineering MOS-Schaltung (DE-588)4135571-4 gnd Statistisches Modell (DE-588)4121722-6 gnd Entwurf (DE-588)4121208-3 gnd VLSI (DE-588)4117388-0 gnd |
| topic_facet | Computer Science Computer-Aided Engineering (CAD, CAE) and Design Electrical Engineering Computer science Computer-aided engineering Electrical engineering MOS-Schaltung Statistisches Modell Entwurf VLSI |
| url | https://doi.org/10.1007/978-1-4615-3150-0 |
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