Heteroepitaxial Semiconductors for Electronic Devices:
Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode o...
Gespeichert in:
| Weitere Verfasser: | , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New York, NY
Springer New York
1978
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| Schlagworte: | |
| Online-Zugang: | BTU01 URL des Erstveröffentlichers |
| Zusammenfassung: | Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved |
| Beschreibung: | 1 Online-Ressource (XIII, 299 p. 54 illus) |
| ISBN: | 9781461262671 |
| DOI: | 10.1007/978-1-4612-6267-1 |
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| 520 | |a Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved | ||
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:58Z |
| institution | BVB |
| isbn | 9781461262671 |
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| spelling | Heteroepitaxial Semiconductors for Electronic Devices edited by G. W. Cullen, C. C. Wang New York, NY Springer New York 1978 1 Online-Ressource (XIII, 299 p. 54 illus) txt rdacontent c rdamedia cr rdacarrier Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved Engineering Electronics and Microelectronics, Instrumentation Condensed Matter Physics Condensed matter Electronics Microelectronics Halbleiter (DE-588)4022993-2 gnd rswk-swf Kristallographie (DE-588)4033217-2 gnd rswk-swf Dünnschichttechnik (DE-588)4136339-5 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Dünnschichttechnik (DE-588)4136339-5 s Epitaxie (DE-588)4152545-0 s Halbleiter (DE-588)4022993-2 s 1\p DE-604 Dünne Schicht (DE-588)4136925-7 s 2\p DE-604 Halbleiterbauelement (DE-588)4113826-0 s 3\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 4\p DE-604 Kristallographie (DE-588)4033217-2 s 5\p DE-604 Cullen, G. W. edt Wang, C. C. edt Erscheint auch als Druck-Ausgabe 9781461262695 https://doi.org/10.1007/978-1-4612-6267-1 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Heteroepitaxial Semiconductors for Electronic Devices Engineering Electronics and Microelectronics, Instrumentation Condensed Matter Physics Condensed matter Electronics Microelectronics Halbleiter (DE-588)4022993-2 gnd Kristallographie (DE-588)4033217-2 gnd Dünnschichttechnik (DE-588)4136339-5 gnd Epitaxie (DE-588)4152545-0 gnd Dünne Schicht (DE-588)4136925-7 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
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| title | Heteroepitaxial Semiconductors for Electronic Devices |
| title_auth | Heteroepitaxial Semiconductors for Electronic Devices |
| title_exact_search | Heteroepitaxial Semiconductors for Electronic Devices |
| title_full | Heteroepitaxial Semiconductors for Electronic Devices edited by G. W. Cullen, C. C. Wang |
| title_fullStr | Heteroepitaxial Semiconductors for Electronic Devices edited by G. W. Cullen, C. C. Wang |
| title_full_unstemmed | Heteroepitaxial Semiconductors for Electronic Devices edited by G. W. Cullen, C. C. Wang |
| title_short | Heteroepitaxial Semiconductors for Electronic Devices |
| title_sort | heteroepitaxial semiconductors for electronic devices |
| topic | Engineering Electronics and Microelectronics, Instrumentation Condensed Matter Physics Condensed matter Electronics Microelectronics Halbleiter (DE-588)4022993-2 gnd Kristallographie (DE-588)4033217-2 gnd Dünnschichttechnik (DE-588)4136339-5 gnd Epitaxie (DE-588)4152545-0 gnd Dünne Schicht (DE-588)4136925-7 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Engineering Electronics and Microelectronics, Instrumentation Condensed Matter Physics Condensed matter Electronics Microelectronics Halbleiter Kristallographie Dünnschichttechnik Epitaxie Dünne Schicht Halbleitertechnologie Halbleiterbauelement |
| url | https://doi.org/10.1007/978-1-4612-6267-1 |
| work_keys_str_mv | AT cullengw heteroepitaxialsemiconductorsforelectronicdevices AT wangcc heteroepitaxialsemiconductorsforelectronicdevices |