Silicon nitride for microelectronic applications: Part 1 Preparation and Properties
The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and prope...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1971
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| Schlagworte: | |
| Online-Zugang: | BTU01 Volltext |
| Zusammenfassung: | The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation ; 5 Introduction ; 5 Direct Nitridation Method 8 Evaporation Method ; 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment |
| Beschreibung: | 1 Online-Ressource (VIII, 118 p. 2 illus) |
| ISBN: | 9781468461626 |
| DOI: | 10.1007/978-1-4684-6162-6 |
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| 520 | |a The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation ; 5 Introduction ; 5 Direct Nitridation Method 8 Evaporation Method ; 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment | ||
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| id | DE-604.BV045185471 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:55Z |
| institution | BVB |
| isbn | 9781468461626 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030574649 |
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| physical | 1 Online-Ressource (VIII, 118 p. 2 illus) |
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| publishDate | 1971 |
| publishDateSearch | 1971 |
| publishDateSort | 1971 |
| publisher | Springer US |
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| spelling | Milek, John Theopil Verfasser aut Silicon nitride for microelectronic applications Part 1 Preparation and Properties by John T. Milek Boston, MA Springer US 1971 1 Online-Ressource (VIII, 118 p. 2 illus) txt rdacontent c rdamedia cr rdacarrier The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation ; 5 Introduction ; 5 Direct Nitridation Method 8 Evaporation Method ; 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment Engineering Electrical Engineering Electrical engineering Erscheint auch als Druck-Ausgabe 9781468461640 https://doi.org/10.1007/978-1-4684-6162-6 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Milek, John Theopil Silicon nitride for microelectronic applications Part 1 Preparation and Properties Engineering Electrical Engineering Electrical engineering |
| title | Silicon nitride for microelectronic applications Part 1 Preparation and Properties |
| title_auth | Silicon nitride for microelectronic applications Part 1 Preparation and Properties |
| title_exact_search | Silicon nitride for microelectronic applications Part 1 Preparation and Properties |
| title_full | Silicon nitride for microelectronic applications Part 1 Preparation and Properties by John T. Milek |
| title_fullStr | Silicon nitride for microelectronic applications Part 1 Preparation and Properties by John T. Milek |
| title_full_unstemmed | Silicon nitride for microelectronic applications Part 1 Preparation and Properties by John T. Milek |
| title_short | Silicon nitride for microelectronic applications |
| title_sort | silicon nitride for microelectronic applications part 1 preparation and properties |
| title_sub | Part 1 Preparation and Properties |
| topic | Engineering Electrical Engineering Electrical engineering |
| topic_facet | Engineering Electrical Engineering Electrical engineering |
| url | https://doi.org/10.1007/978-1-4684-6162-6 |
| work_keys_str_mv | AT milekjohntheopil siliconnitrideformicroelectronicapplicationspart1preparationandproperties |