Characterization Methods for Submicron MOSFETs:
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind...
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1995
|
| Schriftenreihe: | The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing
352 |
| Schlagworte: | |
| Online-Zugang: | BTU01 URL des Erstveröffentlichers |
| Zusammenfassung: | It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications |
| Beschreibung: | 1 Online-Ressource (XIV, 232 p) |
| ISBN: | 9781461313557 |
| DOI: | 10.1007/978-1-4613-1355-7 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV045185373 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 180912s1995 |||| o||u| ||||||eng d | ||
| 020 | |a 9781461313557 |9 978-1-4613-1355-7 | ||
| 024 | 7 | |a 10.1007/978-1-4613-1355-7 |2 doi | |
| 035 | |a (ZDB-2-ENG)978-1-4613-1355-7 | ||
| 035 | |a (OCoLC)1053807631 | ||
| 035 | |a (DE-599)BVBBV045185373 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-634 | ||
| 082 | 0 | |a 621.381 |2 23 | |
| 245 | 1 | 0 | |a Characterization Methods for Submicron MOSFETs |c edited by Hisham Haddara |
| 264 | 1 | |a Boston, MA |b Springer US |c 1995 | |
| 300 | |a 1 Online-Ressource (XIV, 232 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing |v 352 | |
| 520 | |a It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications | ||
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Circuits and Systems | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electrical engineering | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Microelectronics | |
| 650 | 4 | |a Electronic circuits | |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nanostruktur |0 (DE-588)4204530-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Nanostruktur |0 (DE-588)4204530-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Haddara, Hisham |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9781461285847 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4613-1355-7 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-2-ENG | ||
| 940 | 1 | |q ZDB-2-ENG_Archiv | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030574551 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u https://doi.org/10.1007/978-1-4613-1355-7 |l BTU01 |p ZDB-2-ENG |q ZDB-2-ENG_Archiv |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804178875190607872 |
|---|---|
| any_adam_object | |
| author2 | Haddara, Hisham |
| author2_role | edt |
| author2_variant | h h hh |
| author_facet | Haddara, Hisham |
| building | Verbundindex |
| bvnumber | BV045185373 |
| collection | ZDB-2-ENG |
| ctrlnum | (ZDB-2-ENG)978-1-4613-1355-7 (OCoLC)1053807631 (DE-599)BVBBV045185373 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4613-1355-7 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03513nmm a2200553zcb4500</leader><controlfield tag="001">BV045185373</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">180912s1995 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781461313557</subfield><subfield code="9">978-1-4613-1355-7</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4613-1355-7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-2-ENG)978-1-4613-1355-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1053807631</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV045185373</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-634</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">23</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characterization Methods for Submicron MOSFETs</subfield><subfield code="c">edited by Hisham Haddara</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1995</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XIV, 232 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing</subfield><subfield code="v">352</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits and Systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microelectronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic circuits</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Haddara, Hisham</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9781461285847</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4613-1355-7</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-ENG</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-ENG_Archiv</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030574551</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4613-1355-7</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="q">ZDB-2-ENG_Archiv</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV045185373 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:55Z |
| institution | BVB |
| isbn | 9781461313557 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030574551 |
| oclc_num | 1053807631 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | 1 Online-Ressource (XIV, 232 p) |
| psigel | ZDB-2-ENG ZDB-2-ENG_Archiv ZDB-2-ENG ZDB-2-ENG_Archiv |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Springer US |
| record_format | marc |
| series2 | The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing |
| spelling | Characterization Methods for Submicron MOSFETs edited by Hisham Haddara Boston, MA Springer US 1995 1 Online-Ressource (XIV, 232 p) txt rdacontent c rdamedia cr rdacarrier The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing 352 It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications Engineering Electronics and Microelectronics, Instrumentation Circuits and Systems Electrical Engineering Electrical engineering Electronics Microelectronics Electronic circuits MOS-FET (DE-588)4207266-9 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Nanostruktur (DE-588)4204530-7 s 1\p DE-604 Haddara, Hisham edt Erscheint auch als Druck-Ausgabe 9781461285847 https://doi.org/10.1007/978-1-4613-1355-7 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Characterization Methods for Submicron MOSFETs Engineering Electronics and Microelectronics, Instrumentation Circuits and Systems Electrical Engineering Electrical engineering Electronics Microelectronics Electronic circuits MOS-FET (DE-588)4207266-9 gnd Nanostruktur (DE-588)4204530-7 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4204530-7 |
| title | Characterization Methods for Submicron MOSFETs |
| title_auth | Characterization Methods for Submicron MOSFETs |
| title_exact_search | Characterization Methods for Submicron MOSFETs |
| title_full | Characterization Methods for Submicron MOSFETs edited by Hisham Haddara |
| title_fullStr | Characterization Methods for Submicron MOSFETs edited by Hisham Haddara |
| title_full_unstemmed | Characterization Methods for Submicron MOSFETs edited by Hisham Haddara |
| title_short | Characterization Methods for Submicron MOSFETs |
| title_sort | characterization methods for submicron mosfets |
| topic | Engineering Electronics and Microelectronics, Instrumentation Circuits and Systems Electrical Engineering Electrical engineering Electronics Microelectronics Electronic circuits MOS-FET (DE-588)4207266-9 gnd Nanostruktur (DE-588)4204530-7 gnd |
| topic_facet | Engineering Electronics and Microelectronics, Instrumentation Circuits and Systems Electrical Engineering Electrical engineering Electronics Microelectronics Electronic circuits MOS-FET Nanostruktur |
| url | https://doi.org/10.1007/978-1-4613-1355-7 |
| work_keys_str_mv | AT haddarahisham characterizationmethodsforsubmicronmosfets |