Ion Implantation: Basics to Device Fabrication:
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implant...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1995
|
| Schriftenreihe: | The Springer International Series in Engineering and Computer Science
293 |
| Schlagworte: | |
| Online-Zugang: | BTU01 URL des Erstveröffentlichers |
| Zusammenfassung: | Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject |
| Beschreibung: | 1 Online-Ressource (XIII, 393 p) |
| ISBN: | 9781461522591 |
| DOI: | 10.1007/978-1-4615-2259-1 |
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| 520 | |a Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject | ||
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| discipline | Physik |
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| id | DE-604.BV045185371 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:55Z |
| institution | BVB |
| isbn | 9781461522591 |
| language | English |
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| spelling | Rimini, Emanuele Verfasser aut Ion Implantation: Basics to Device Fabrication by Emanuele Rimini Boston, MA Springer US 1995 1 Online-Ressource (XIII, 393 p) txt rdacontent c rdamedia cr rdacarrier The Springer International Series in Engineering and Computer Science 293 Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject Materials Science Characterization and Evaluation of Materials Inorganic Chemistry Nuclear Physics, Heavy Ions, Hadrons Materials science Inorganic chemistry Nuclear physics Heavy ions Hadrons Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 s 1\p DE-604 Erscheint auch als Druck-Ausgabe 9780792395201 https://doi.org/10.1007/978-1-4615-2259-1 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Rimini, Emanuele Ion Implantation: Basics to Device Fabrication Materials Science Characterization and Evaluation of Materials Inorganic Chemistry Nuclear Physics, Heavy Ions, Hadrons Materials science Inorganic chemistry Nuclear physics Heavy ions Hadrons Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4027606-5 |
| title | Ion Implantation: Basics to Device Fabrication |
| title_auth | Ion Implantation: Basics to Device Fabrication |
| title_exact_search | Ion Implantation: Basics to Device Fabrication |
| title_full | Ion Implantation: Basics to Device Fabrication by Emanuele Rimini |
| title_fullStr | Ion Implantation: Basics to Device Fabrication by Emanuele Rimini |
| title_full_unstemmed | Ion Implantation: Basics to Device Fabrication by Emanuele Rimini |
| title_short | Ion Implantation: Basics to Device Fabrication |
| title_sort | ion implantation basics to device fabrication |
| topic | Materials Science Characterization and Evaluation of Materials Inorganic Chemistry Nuclear Physics, Heavy Ions, Hadrons Materials science Inorganic chemistry Nuclear physics Heavy ions Hadrons Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Materials Science Characterization and Evaluation of Materials Inorganic Chemistry Nuclear Physics, Heavy Ions, Hadrons Materials science Inorganic chemistry Nuclear physics Heavy ions Hadrons Ionenimplantation |
| url | https://doi.org/10.1007/978-1-4615-2259-1 |
| work_keys_str_mv | AT riminiemanuele ionimplantationbasicstodevicefabrication |