Semiconductor Lasers:
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emittin...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Boston, MA
Springer US
1993
|
| Edition: | Second Edition |
| Subjects: | |
| Online Access: | BTU01 Volltext |
| Summary: | Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths |
| Physical Description: | 1 Online-Ressource (616 p) |
| ISBN: | 9781461304814 |
| DOI: | 10.1007/978-1-4613-0481-4 |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV045184671 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 180912s1993 |||| o||u| ||||||eng d | ||
| 020 | |a 9781461304814 |9 978-1-4613-0481-4 | ||
| 024 | 7 | |a 10.1007/978-1-4613-0481-4 |2 doi | |
| 035 | |a (ZDB-2-ENG)978-1-4613-0481-4 | ||
| 035 | |a (OCoLC)1053828518 | ||
| 035 | |a (DE-599)BVBBV045184671 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-634 | ||
| 082 | 0 | |a 621.3 |2 23 | |
| 100 | 1 | |a Agrawal, Govind P. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Semiconductor Lasers |c by Govind P. Agrawal, Niloy K. Dutta |
| 250 | |a Second Edition | ||
| 264 | 1 | |a Boston, MA |b Springer US |c 1993 | |
| 300 | |a 1 Online-Ressource (616 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 520 | |a Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths | ||
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electrical engineering | |
| 650 | 0 | 7 | |a Halbleiterlaser |0 (DE-588)4139556-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Dutta, Niloy K. |4 aut | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9781461275794 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4613-0481-4 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-2-ENG | ||
| 940 | 1 | |q ZDB-2-ENG_Archiv | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030573849 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u https://doi.org/10.1007/978-1-4613-0481-4 |l BTU01 |p ZDB-2-ENG |q ZDB-2-ENG_Archiv |x Verlag |3 Volltext | |
Record in the Search Index
| _version_ | 1804178873703727104 |
|---|---|
| any_adam_object | |
| author | Agrawal, Govind P. Dutta, Niloy K. |
| author_facet | Agrawal, Govind P. Dutta, Niloy K. |
| author_role | aut aut |
| author_sort | Agrawal, Govind P. |
| author_variant | g p a gp gpa n k d nk nkd |
| building | Verbundindex |
| bvnumber | BV045184671 |
| collection | ZDB-2-ENG |
| ctrlnum | (ZDB-2-ENG)978-1-4613-0481-4 (OCoLC)1053828518 (DE-599)BVBBV045184671 |
| dewey-full | 621.3 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3 |
| dewey-search | 621.3 |
| dewey-sort | 3621.3 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4613-0481-4 |
| edition | Second Edition |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03152nmm a2200481zc 4500</leader><controlfield tag="001">BV045184671</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">180912s1993 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781461304814</subfield><subfield code="9">978-1-4613-0481-4</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4613-0481-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-2-ENG)978-1-4613-0481-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1053828518</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV045184671</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-634</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Agrawal, Govind P.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor Lasers</subfield><subfield code="c">by Govind P. Agrawal, Niloy K. Dutta</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">Second Edition</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (616 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical engineering</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dutta, Niloy K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9781461275794</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4613-0481-4</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-ENG</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-ENG_Archiv</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030573849</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4613-0481-4</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="q">ZDB-2-ENG_Archiv</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV045184671 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:54Z |
| institution | BVB |
| isbn | 9781461304814 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030573849 |
| oclc_num | 1053828518 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | 1 Online-Ressource (616 p) |
| psigel | ZDB-2-ENG ZDB-2-ENG_Archiv ZDB-2-ENG ZDB-2-ENG_Archiv |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Springer US |
| record_format | marc |
| spelling | Agrawal, Govind P. Verfasser aut Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta Second Edition Boston, MA Springer US 1993 1 Online-Ressource (616 p) txt rdacontent c rdamedia cr rdacarrier Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths Engineering Electrical Engineering Electrical engineering Halbleiterlaser (DE-588)4139556-6 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 s 1\p DE-604 Dutta, Niloy K. aut Erscheint auch als Druck-Ausgabe 9781461275794 https://doi.org/10.1007/978-1-4613-0481-4 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Agrawal, Govind P. Dutta, Niloy K. Semiconductor Lasers Engineering Electrical Engineering Electrical engineering Halbleiterlaser (DE-588)4139556-6 gnd |
| subject_GND | (DE-588)4139556-6 |
| title | Semiconductor Lasers |
| title_auth | Semiconductor Lasers |
| title_exact_search | Semiconductor Lasers |
| title_full | Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta |
| title_fullStr | Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta |
| title_full_unstemmed | Semiconductor Lasers by Govind P. Agrawal, Niloy K. Dutta |
| title_short | Semiconductor Lasers |
| title_sort | semiconductor lasers |
| topic | Engineering Electrical Engineering Electrical engineering Halbleiterlaser (DE-588)4139556-6 gnd |
| topic_facet | Engineering Electrical Engineering Electrical engineering Halbleiterlaser |
| url | https://doi.org/10.1007/978-1-4613-0481-4 |
| work_keys_str_mv | AT agrawalgovindp semiconductorlasers AT duttaniloyk semiconductorlasers |